LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors MMUN2111LT1 Series PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MMUN2111LT1 SERIES 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating 2 CASE 318, STYLE 6 SOT–23 (TO–236AB) PIN 1 R1 BASE (INPUT) R2 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) MARKINGDIAGRAM A6x M A6x = Device Marking Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current 1 x M = A – L(See Page 2) = Date Code DEVICE MARKING INFORMATION See specific marking information in THERMAL CHARACTERISTICS the device marking table on page 2 of this Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Symbol Max Unit PD 246 (Note 1.) 400 (Note 2.) 1.5 (Note 1.) 2.0 (Note 2.) mW data sheet. °C/W Thermal Resistance – Junction-to-Ambient RθJA 508 (Note 1.) 311 (Note 2.) °C/W Thermal Resistance – Junction-to-Lead RθJL 174 (Note 1.) 208 (Note 2.) °C/W Junction and Storage Temperature Range TJ, Tstg –55 to +150 °C 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad MMUN2111S-1/11 LESHAN RADIO COMPANY, LTD. MMUN2111LT1 Series DEVICE MARKING AND RESISTOR VALUES Device Package Marking R1 (K) R2 (K) Shipping MMUN2111LT1 MMUN2111LT3 SOT–23 A6A 10 10 3000/Tape & Reel 10,000/Tape & Reel MMUN2112LT1 MMUN2112LT3 SOT–23 A6B 22 22 3000/Tape & Reel 10,000/Tape & Reel MMUN2113LT1 MMUN2113LT3 SOT–23 A6C 47 47 3000/Tape & Reel 10,000/Tape & Reel MMUN2114LT1 MMUN2114LT3 SOT–23 A6D 10 47 3000/Tape & Reel 10,000/Tape & Reel MMUN2115LT1 (Note 3.) MMUN2115LT3 SOT–23 A6E 10 ∞ 3000/Tape & Reel 10,000/Tape & Reel MMUN2116LT1 (Note 3.) MMUN2116LT3 SOT–23 A6F 4.7 ∞ 3000/Tape & Reel 10,000/Tape & Reel MMUN2130LT1 (Note 3.) MMUN2130LT3 SOT–23 A6G 1.0 1.0 3000/Tape & Reel 10,000/Tape & Reel MMUN2131LT1 (Note 3.) MMUN2131LT3 SOT–23 A6H 2.2 2.2 3000/Tape & Reel 10,000/Tape & Reel MMUN2132LT1 (Note 3.) MMUN2132LT3 SOT–23 A6J 4.7 4.7 3000/Tape & Reel 10,000/Tape & Reel MMUN2133LT1 (Note 3.) MMUN2133LT3 SOT–23 A6K 4.7 47 3000/Tape & Reel 10,000/Tape & Reel MMUN2134LT1 (Note 3.) MMUN2134LT3 SOT–23 A6L 22 47 3000/Tape & Reel 10,000/Tape & Reel ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO – – 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO – – 500 nAdc Emitter-Base Cutoff Current (V EB = 6.0 V, IC = 0 ) IEBO – – – – – – – – – – – – – – – – – – – – – – 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 mAdc Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 – – Vdc Collector-Emitter Breakdown Voltage (Note 4.) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 – – Vdc OFF CHARACTERISTICS MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 3. New devices. Updated curves to follow in subsequent data sheets. 4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% MMUN2111S–2/11 LESHAN RADIO COMPANY, LTD. MMUN2111LT1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 60 100 140 140 250 250 5.0 15 27 140 130 – – – – – – – – – – – VCE(sat) – – 0.25 – – – – – – – – – – – – – – – – – – – – – – 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 VOH 4.9 – – Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 kΩ R1/R2 0.8 0.17 – 0.8 0.055 1.0 0.21 – 1.0 0.1 1.2 0.25 – 1.2 0.185 ON CHARACTERISTICS (Note 5.) DC Current Gain (V CE = 10 V, IC = 5.0 mA ) MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) MMUN2130LT1/MMUN2131LT1 (IC = 10 mA, IB = 1 mA) MMUN2115LT1/MMUN2116LT1/ MMUN2132LT1/MMUN2133LT1/MMUN2134LT1 Output Voltage (on) (V CC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ ) (V CC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ ) VOL MMUN2111LT1 MMUN2112LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 MMUN2113LT1 Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ ) (VCC Vdc Vdc MMUN2115LT1 MMUN2116LT1 MMUN2131LT1 MMUN2132LT1 = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ ) MMUN2130LT1 Input Resistor MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 Resistor Ratio MMUN2111LT1/MMUN2112LT1/MMUN2113LT1 MMUN2114LT1 MMUN2115LT1/MMUN2116LT1 MMUN2130LT1/MMUN2131LT1/MMUN2132LT1 MMUN2133LT1 5. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% MMUN2111S–3/11 LESHAN RADIO COMPANY, LTD. MMUN2111LT1 Series PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 RθJA = 625°C/W 50 0 -50 0 50 100 150 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2111LT1 1 IC/IB=10 TA=-25°C 75°C 0.1 0.01 20 0 TA, AMBIENT TEMPERATURE (°C) Cob , CAPACITANCE (pF) h FE, DC CURRENT GAIN (NORMALIZED) TA=75°C 25°C -25°C 100 10 IC, COLLECTOR CURRENT (mA) 3 2 1 0 100 f = 1 MHz lE = 0 V TA = 25°C 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 3. DC Current Gain 100 25°C VO = 0.2 V TA=-25°C 10 1 0.1 0.01 0.001 VO = 5 V 0 1 2 50 Figure 4. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) IC , COLLECTOR CURRENT (mA) 75°C 80 4 VCE = 10 V 100 60 Figure 2. VCE(sat) versus IC 1000 1 40 IC, COLLECTOR CURRENT (mA) Figure 1. Derating Curve 10 25°C 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 Figure 5. Output Current versus Input Voltage 10 TA=-25°C 10 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current MMUN2111S–4/11 LESHAN RADIO COMPANY, LTD. MMUN2111LT1 Series 1000 10 IC/IB=10 h FE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2112LT1 TA=-25°C 25°C 1 75°C 0.1 0.01 0 20 40 60 IC, COLLECTOR CURRENT (mA) VCE = 10 V TA=75°C 10 80 1 10 Figure 8. DC Current Gain 100 IC , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 2 1 0 75°C 25°C TA=-25°C 10 1 0.1 VO = 5 V 0.01 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 1 2 3 4 5 6 7 8 9 10 Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 0 100 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC 3 25°C -25°C 100 TA=-25°C 25°C 10 75°C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current MMUN2111S–5/11 LESHAN RADIO COMPANY, LTD. MMUN2111LT1 Series 1 1000 IC/IB=10 TA=-25°C 25°C 75°C 0.1 0.01 h FE , CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2113LT1 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C -25°C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 100 0.6 0.4 0.2 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 TA=75°C 25°C -25°C 10 1 0.1 0.01 0.001 VO = 5 V 0 1 2 3 4 5 6 7 8 9 10 Vin, INPUT VOLTAGE (VOLTS) Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 Vin , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) I C , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 0.8 100 VO = 2 V TA=-25°C 25°C 75°C 10 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current MMUN2111S–6/11 LESHAN RADIO COMPANY, LTD. MMUN2111LT1 Series 1 180 IC/IB=10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2114LT1 TA=-25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75°C VCE = 10 V 160 25°C 140 -25°C 120 100 80 60 40 20 0 80 1 2 4 6 Figure 17. VCE(sat) versus IC TA=75°C f = 1 MHz lE = 0 V TA = 25°C 3.5 3 IC, COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) 90 100 100 4 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 Figure 19. Output Capacitance 25°C -25°C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 20. Output Current versus Input Voltage +12 V 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 80 Figure 18. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) TA=-25°C 25°C 75°C Typical Application for PNP BRTs 1 LOAD 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current Figure 22. Inexpensive, Unregulated Current Source MMUN2111S–7/11