MOTOROLA MRF19045SR3 Rf power field effect transistor Datasheet

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by MRF19045/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier
applications.
• Typical CDMA Performance @ 1960 MHz, 26 Volts, IDQ = 550 mA
Multi–carrier CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 9.5 Watts Avg.
Power Gain — 14.9 dB
Efficiency — 23.5%
Adjacent Channel Power —
885 kHz: –50 dBc @ 30 kHz BW
IM3 — –37 dBc
• 100% Tested Under 2–Carrier N–CDMA
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 45 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
1990 MHz, 45 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465E–03, STYLE 1
NI–400
MRF19045R3
CASE 465F–03, STYLE 1
NI–400S
MRF19045SR3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
–0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
105
0.60
Watts
W/°C
Storage Temperature Range
Tstg
–65 to +200
°C
Operating Junction Temperature
TJ
200
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
RθJC
1.65
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2002
MRF19045R3 MRF19045SR3
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 µAdc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 550 mAdc)
VGS(Q)
3
3.8
5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.19
0.21
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
4.2
—
S
Crss
—
1.8
—
pF
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 µAdc)
ON CHARACTERISTICS (DC)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2–carrier N–CDMA, 1.2288 MHz Channel Bandwidth, IM3 measured in
1.2288 MHz Integrated Bandwidth. ACPR measured in 30 kHz Integrated Bandwidth.
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 9.5 W Avg, 2–Carrier N–CDMA,
IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz,
f2 = 1990 MHz)
Gps
13
14.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 9.5 W Avg, 2–Carrier N–CDMA,
IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz,
f2 = 1990 MHz)
η
21
23.5
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 9.5 W Avg, 2–Carrier N–CDMA,
IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz,
f2 = 1990 MHz; IM3 Measured in a 1.2288 MHz Integrated Bandwidth
Centered at f1 –2.5 Mhz and f2 +2.5 MHz, Referenced to the Carrier
Channel Power)
IM3
—
–37
–35
dBc
ACPR
—
–51
–45
dBc
IRL
—
–16
–9
dB
P1dB
—
45
—
W
Adjacent Channel Power Ratio
(VDD = 26 Vdc, Pout = 9.5 W Avg, 2–carrier N–CDMA, IDQ = 550 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz,
f2 = 1990 MHz; ACPR measured in a 30 kHz Integrated Bandwith
Centered at f1 –885 kHz and f2 +885 kHz)
Input Return Loss
(VDD = 26 Vdc, Pout = 9.5 W Avg, 2–Carrier N–CDMA,
IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz,
f2 = 1990 MHz)
Pout, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 550 mA, f = 1990 MHz)
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 45 W CW, IDQ = 550 mA,
f = 1930 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
MRF19045R3 MRF19045SR3
2
MOTOROLA RF DEVICE DATA
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
1.336″ x 0.081″ Microstrip
0.693″ x 0.081″ Microstrip
1.033″ x 0.047″ Microstrip
0.468″ x 0.047″ Microstrip
0.271″ x 0.460″ Microstrip
0.263″ x 0.930″ Microstrip
1.165″ x 0.047″ Microstrip
0.216″ x 0.047″ Microstrip
Z9
Z10
Z11
Board
Printed Circuit
Board
0.519″ x 0.254″ Microstrip
0.874″ x 0.081″ Microstrip
0.645″ x 0.081″ Microstrip
3″ x 5″ Copper Clad PCB,
Arlon GX0300-55-22, εr = 2.55
CMR Part Number 19045PC5.SKF
NOTE: Z3, Z4, Z7, Z8 lengths and component placement tolerances are ±0.050″.
Zx lengths are microstrip lengths between components, center-line to center-line.
All component and z-length tolerances are ±0.015″, except as noted.
Figure 1. 1930 – 1990 MHz 2-Carrier N-CDMA Test Circuit Schematic
Table 1. 1930 – 1990 MHz 2-Carrier N-CDMA Test Circuit Component Designations and Values
Designators
Description
B1, B2
0.120″ x 0.333″ x 0.100″, Surface Mount Ferrite Beads, Fair Rite #2743019446
C1, C2
10 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T495X106K035AS4394
C3, C11
0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS
C4, C8
24 pF Chip Capacitors, B Case, ATC #100B240JP500X
C5
470 pF Chip Capacitor, B Case, ATC #100B471JP200X
C6, C7
11 pF Chip Capacitors, B Case, ATC #100B110JP500X
C9, C10, C12
22 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394
C13
8.2 pF Chip Capacitor, B Case, ATC #100B8R2CP500X
R1
560 kΩ, 1/4 W Chip Resistor (0.08″ x 0.13″)
R2, R3, R4, R5
8.2 Ω, 1/4 W Chip Resistors (0.08″ x 0.13″), Garrett Instruments #RM73B2B110JT
W1, W2
Solid Copper Buss Wire, 16 AWG
WS1, WS2
Beryllium Copper Wear Blocks (0.005″ x 0.150″ x 0.350″) Nominal
Brass Banana Jack and Nut
Red Banana Jack and Nut
Green Banana Jack and Nut
Type “N” Jack Connectors, Omni-Spectra #3052-1648-10
4-40 Ph Head Screws, 0.125″ long
4-40 Ph Head Screws, 0.312″ long
4-40 Ph Head Screws, 0.625″ long
4-40 Ph Rec. Hd. Screws, 0.625″ long
MOTOROLA RF DEVICE DATA
MRF19045R3 MRF19045SR3
3
C6
MRF19045/S
Rev–0
Figure 2. 1930 – 1990 MHz 2-Carrier N-CDMA Test Circuit Component Layout
MRF19045R3 MRF19045SR3
4
MOTOROLA RF DEVICE DATA
.
η
$ 56
η
<$
<$
( .1; +4- >*??-@ *?3A,3>!
1 *++,-+
#( 3 -*BC$&'( *, D ( 8%
<$
<$
<$
( .1; +4- >*??-@ *?3A,3>!
1 *++,-+
#( 3 -*BC$&'( *, D ( 8
+E*E,@,F% # %
<$
Figure 6. 2-Carrier N-CDMA ACPR
versus Output Power
<$
<$
<$
(
= 34! : = <$
9 = .1;! 9 = ( .1;
(
( .1; +4- >*??-@ *?3A,3>!
1 *++,-+
#( 3 -*BC$&'( *, D ( 8 +E*E,@,F% #
%
! " #$% #$&'( ) *++,-+ ) .$%
Figure 7. 2-Carrier N-CDMA Power Gain
versus Output Power
MOTOROLA RF DEVICE DATA
= 34
: = <$
9 = .1;! 9 = ( .1;
Figure 5. 2-Carrier N-CDMA IM3
versus Output Power
<$
! " #$% #$&'( ) *++,-+ ) .$%
(
(
! " #$% #$&'( ) *++,-+ ) .$%
(
56 !/"/$/#3%
$ !/$0$ "/ 1$"2/"/$/#34%
<$
η!/$/" " 7/#8%! !//"/#$/ %
.!/1/"
".2$//#34%
<$
Figure 4. 2-Carrier N-CDMA ACPR, IM3, Power Gain, IRL
and Drain Efficiency versus Output Power
= 34
: = <$
9 = .1;! 9 = ( .1;
$ 9! ":" 7 #.1;%
Figure 3. 2-Carrier N–CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
56
.
! " #$% #$&'( ) *++,-+ ) .$%
./#34%! $ /#34%! 2/#3%
= 34! : = <$ ( .1; *++,-+ 5*4,?'
( .1; +4- >*??-@ *?3A,3>
1 *++,-+ #( 3 -*BC$&'( *, D ( 8%
2
3
3
η
56
= 34
: = <$
9 = .1;
(
(
(
(
(
56 !/"/$/#3%
= 34
: = <$
9 = .1;! 9 = ( .1;
η!/$/" " 7/#8%!/ 56 !/"/$/#3%
./#34%! $ /#34%
η!/$/" " 7/#8%!/ 56 !/"/$/#3%
TYPICAL CHARACTERISTICS
(
(
(
(
(
,?! " #$ %
Figure 8. CW Output Power, Power Gain and Drain
Efficiency versus Input Power
MRF19045R3 MRF19045SR3
5
56
.
η
(
(
η
= 34
: = <$
B1; ?- 5*4,?'
2
56
.
! " #$ "%
9! ":" 7 #.1;%
Figure 9. CW Two-Tone Power Gain, IMD and
Drain Efficiency versus Output Power
Figure 10. CW Two-Tone Power Gain, Input Return Loss,
IMD and Drain Efficiency versus Frequency
(
= 34
9 = .1;! 9 = ( .1;
(
<$
56 !/"/$/#3%
.!/1/"/".2$//#34%
<$
<$
<$
<$
(
<$
(
<$
(
(
= 34
9 = .1;! 9 = ( .1;
<$
(
(
(
(
(
Figure 12. CW Two-Tone Power Gain versus
Output Power
Figure 11. CW Two-Tone Intermodulation Distortion
versus Output Power
= 34
: = <$
9 = .1;! 9 = ( .1;
+3/+3-+
. D
( .1;
?-'+*-3 . D
( .1;
?-'+*-3 >/+3-+
(
( .1;
>*??-@ #34%
.!/.!/./#34%
! " #$ "%
! " #$ "%
>/+3-+
(
! " #$ "%
Figure 13. CW Two-Tone Intermodulation Distortion Products
versus Output Power
MRF19045R3 MRF19045SR3
6
$ D B1;
?-'+*-3 $ D B1;
?-'+*-3 9! ":" 7 #.1;%
Figure 14. 2-Carrier N-CDMA Spectrum
MOTOROLA RF DEVICE DATA
.!/".2$///#34%!/2/#3%
= 34
: = <$
9 = .1;! 9 = ( .1;
η!/$/" " 7/#8%! 56 !/"/$/#3%
.!/".2$//#34%
η!/$/" " 7/#8%!/ 56 !/"/$/#3%
9 = .1;
,?
9 = .1;
= Ω
9 = .1;
2H
9 = .1;
= ! : = <$! = $&'(! ) *++,-+ .$
Zin
f
MHz
Zin
Ω
ZOL*
Ω
1930
15.52 + j16.5
4.52 + j1.86
1960
14.24 + j14.44
3.85 + j1.04
1990
11.11 + j13.01
3.44 + j0.69
= Complex conjugate of the optimum source
impedance.
ZOL* = Complex conjugate of the optimum load
impedance at a given output power, voltage,
IMD, bias current and frequency.
- G 2H A*6 4>6-? E*6-3 ? +*3-996 E-A--? '*,?! 5
5A-+! 3+*,? -99,4,-?4F *?3 ,?-+<3@*,? 3,6+,?(
- G .-*6+-<-?6 A-+- *B-? ? >- . )4*++,-+
) .$ -6 4,+4,! A,> .$ 2*?4>-+6(
?5
.*4>,?'
-A+B
5
.*4>,?'
-A+B
-&,4?3-+ -6
Z
in
Z
*
OL
Figure 15. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF19045R3 MRF19045SR3
7
NOTES
MRF19045R3 MRF19045SR3
8
MOTOROLA RF DEVICE DATA
NOTES
MOTOROLA RF DEVICE DATA
MRF19045R3 MRF19045SR3
9
NOTES
MRF19045R3 MRF19045SR3
10
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
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CASE 465E–03
ISSUE D
NI–400
MRF19045R3
1
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CASE 465F–03
ISSUE B
NI–400S
MRF19045SR3
MOTOROLA RF DEVICE DATA
MRF19045R3 MRF19045SR3
11
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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MOTOROLA and the
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E Motorola, Inc. 2002.
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MRF19045R3 MRF19045SR3
12
◊
MOTOROLA RF DEVICE MRF19045/D
DATA
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