PHILIPS BZX79-C7V5 Voltage regulator diode Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BZX79 series
Voltage regulator diodes
Product specification
Supersedes data of 1999 May 25
2002 Feb 27
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
FEATURES
• Total power dissipation: max. 500 mW
• Two tolerance series: ±2%, and approx. ±5%
• Working voltage range: nom. 2.4 to 75 V (E24 range)
• Non-repetitive peak reverse power dissipation:
max. 40 W.
handbook, halfpage
k
a
APPLICATIONS
MAM239
• Low voltage stabilizers or voltage references.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed
leaded glass SOD27 (DO-35) packages. The diodes are
available in the normalized E24 ±2% (BZX79-B) and
approx. ±5% (BZX79-C) tolerance range. The series
consists of 37 types with nominal working voltages from
2.4 to 75 V.
The diodes are type branded.
Fig.1
Simplified outline (SOD27; DO-35) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
MAX.
UNIT
IF
continuous forward current
IZSM
non-repetitive peak reverse current
tp = 100 µs; square wave;
Tj = 25 °C prior to surge
see Tables 1 and 2 A
Ptot
total power dissipation
Tamb = 50 °C; note 1
−
400
mW
Tamb = 50 °C; note 2
−
500
mW
40
W
tp = 100 µs; square wave;
−
Tj = 25 °C prior to surge; see Fig.3
250
mA
PZSM
non-repetitive peak reverse power
dissipation
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
−65
+200
°C
Notes
1. Device mounted on a printed circuit-board without metallization pad; lead length max.
2. Tie-point temperature ≤ 50 °C; max. lead length 8 mm.
ELECTRICAL CHARACTERISTICS
Total BZX79-B and BZX79-C series
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
2002 Feb 27
PARAMETER
forward voltage
CONDITIONS
IF = 10 mA; see Fig.4
2
MAX.
UNIT
0.9
V
Philips Semiconductors
Product specification
Voltage regulator diodes
SYMBOL
IR
2002 Feb 27
BZX79 series
PARAMETER
CONDITIONS
MAX.
UNIT
reverse current
BZX79-B/C2V4
VR = 1 V
50
µA
BZX79-B/C2V7
VR = 1 V
20
µA
BZX79-B/C3V0
VR = 1 V
10
µA
BZX79-B/C3V3
VR = 1 V
5
µA
BZX79-B/C3V6
VR = 1 V
5
µA
BZX79-B/C3V9
VR = 1 V
3
µA
BZX79-B/C4V3
VR = 1 V
3
µA
BZX79-B/C4V7
VR = 2 V
3
µA
BZX79-B/C5V1
VR = 2 V
2
µA
BZX79-B/C5V6
VR = 2 V
1
µA
BZX79-B/C6V2
VR = 4 V
3
µA
BZX79-B/C6V8
VR = 4 V
2
µA
BZX79-B/C7V5
VR = 5 V
1
µA
BZX79-B/C8V2
VR = 5 V
700
nA
BZX79-B/C9V1
VR = 6 V
500
nA
BZX79-B/C10
VR = 7 V
200
nA
BZX79-B/C11
VR = 8 V
100
nA
BZX79-B/C12
VR = 8 V
100
nA
BZX79-B/C13
VR = 8 V
100
nA
BZX79-B/C15 to BZX79-B/C75
VR = 0.7VZnom
50
nA
3
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DIFFERENTIAL RESISTANCE
rdif (Ω)
Tol. ±2% (B)
Tol. approx.
±5% (C)
at IZtest = 1 mA
MIN.
MIN.
TYP.
MAX.
MAX.
MAX.
TEMP. COEFF.
SZ (mV/K)
at IZtest = 5 mA
(see Figs 5 and 6)
NON-REPETITIVE PEAK
DIODE CAP.
REVERSE CURRENT
Cd (pF)
at f = 1 MHz;
IZSM (A)
VR = 0 V
at tp = 100 µs; Tamb = 25 °C
at IZtest = 5 mA
TYP.
MAX.
MIN.
TYP.
MAX.
MAX.
MAX.
2V4
2.35
2.45
2.2
2.6
275
600
70
100
−3.5
−1.6
0
450
6.0
2V7
2.65
2.75
2.5
2.9
300
600
75
100
−3.5
−2.0
0
450
6.0
4
3.06
2.8
3.2
325
600
80
95
−3.5
−2.1
0
450
6.0
3.37
3.1
3.5
350
600
85
95
−3.5
−2.4
0
450
6.0
3V6
3.53
3.67
3.4
3.8
375
600
85
90
−3.5
−2.4
0
450
6.0
3V9
3.82
3.98
3.7
4.1
400
600
85
90
−3.5
−2.5
0
450
6.0
4V3
4.21
4.39
4.0
4.6
410
600
80
90
−3.5
−2.5
0
450
6.0
4V7
4.61
4.79
4.4
5.0
425
500
50
80
−3.5
−1.4
0.2
300
6.0
5V1
5.00
5.20
4.8
5.4
400
480
40
60
−2.7
−0.8
1.2
300
6.0
5V6
5.49
5.71
5.2
6.0
80
400
15
40
−2.0
1.2
2.5
300
6.0
6V2
6.08
6.32
5.8
6.6
40
150
6
10
0.4
2.3
3.7
200
6.0
6V8
6.66
6.94
6.4
7.2
30
80
6
15
1.2
3.0
4.5
200
6.0
7V5
7.35
7.65
7.0
7.9
30
80
6
15
2.5
4.0
5.3
150
4.0
8V2
8.04
8.36
7.7
8.7
40
80
6
15
3.2
4.6
6.2
150
4.0
9V1
8.92
9.28
8.5
9.6
40
100
6
15
3.8
5.5
7.0
150
3.0
10
9.80
10.20
9.4
10.6
50
150
8
20
4.5
6.4
8.0
90
3.0
11
10.80
11.20
10.4
11.6
50
150
10
20
5.4
7.4
9.0
85
2.5
12
11.80
12.20
11.4
12.7
50
150
10
25
6.0
8.4
10.0
85
2.5
13
12.70
13.30
12.4
14.1
50
170
10
30
7.0
9.4
11.0
80
2.5
15
14.70
15.30
13.8
15.6
50
200
10
30
9.2
11.4
13.0
75
2.0
16
15.70
16.30
15.3
17.1
50
200
10
40
10.4
12.4
14.0
75
1.5
18
17.60
18.40
16.8
19.1
50
225
10
45
12.4
14.4
16.0
70
1.5
20
19.60
20.40
18.8
21.2
60
225
15
55
12.3
15.6
18.0
60
1.5
22
21.60
22.40
20.8
23.3
60
250
20
55
14.1
17.6
20.0
60
1.25
24
23.50
24.50
22.8
25.6
60
250
25
70
15.9
19.6
22.0
55
1.25
Product specification
2.94
3.23
BZX79 series
3V0
3V3
Philips Semiconductors
BZX79Bxxx
Cxxx
WORKING VOLTAGE
VZ (V)
at IZtest = 5 mA
Voltage regulator diodes
2002 Feb 27
Table 1 Per type, BZX79-B/C2V4 to BZX79-B/C24
Tj = 25 °C unless otherwise specified.
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DIFFERENTIAL RESISTANCE
rdif (Ω)
TEMP. COEFF.
SZ (mV/K)
at IZtest = 2 mA
(see Figs 5 and 6)
NON-REPETITIVE PEAK
DIODE CAP.
REVERSE CURRENT
Cd (pF)
at f = 1 MHz;
IZSM (A)
VR = 0 V
at tp = 100 µs; Tamb = 25 °C
5
Tol. ±2% (B)
Tol. approx.
±5% (C)
MIN.
MAX.
MIN.
27
26.50
27.50
25.1
28.9
65
300
25
80
18.0
22.7
25.3
50
1.0
30
29.40
30.60
28.0
32.0
70
300
30
80
20.6
25.7
29.4
50
1.0
33
32.30
33.70
31.0
35.0
75
325
35
80
23.3
28.7
33.4
45
0.9
36
35.30
36.70
34.0
38.0
80
350
35
90
26.0
31.8
37.4
45
0.8
39
38.20
39.80
37.0
41.0
80
350
40
130
28.7
34.8
41.2
45
0.7
43
42.10
43.90
40.0
46.0
85
375
45
150
31.4
38.8
46.6
40
0.6
47
46.10
47.90
44.0
50.0
85
375
50
170
35.0
42.9
51.8
40
0.5
51
50.00
52.00
48.0
54.0
90
400
60
180
38.6
46.9
57.2
40
0.4
56
54.90
57.10
52.0
60.0
100
425
70
200
42.2
52.0
63.8
40
0.3
62
60.80
63.20
58.0
66.0
120
450
80
215
58.8
64.4
71.6
35
0.3
68
66.60
69.40
64.0
72.0
150
475
90
240
65.6
71.7
79.8
35
0.25
75
73.50
76.50
70.0
79.0
170
500
95
255
73.4
80.2
88.6
35
0.2
MAX.
at IZtest = 0.5 mA at IZtest = 2 mA
TYP.
MAX.
TYP.
MAX.
MIN.
TYP.
MAX.
MAX.
MAX.
Philips Semiconductors
BZX79Bxxx
Cxxx
WORKING VOLTAGE
VZ (V)
at IZtest = 2 mA
Voltage regulator diodes
2002 Feb 27
Table 2 Per type, BZX79-B/C27 to BZX79-B/C75
Tj = 25 °C unless otherwise specified.
Product specification
BZX79 series
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point lead length 8 mm.
300
K/W
Rth j-a
thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1
380
K/W
Note
1. Device mounted on a printed circuit-board without metallization pad.
GRAPHICAL DATA
MBG930
103
handbook, full pagewidth
δ=1
Rth j-a
0.75
0.50
0.33
0.20
(K/W)
102
0.10
0.05
0.02
0.01
≤0.001
10
tp
T
1
10−1
1
10
102
103
104
δ=
6
T
tp (ms)
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.
2002 Feb 27
tp
105
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
MBG781
MBG801
103
handbook, halfpage
300
handbook, halfpage
PZSM
(W)
IF
(mA)
102
200
(1)
10
100
(2)
1
10−1
1
duration (ms)
0
0.6
10
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Tj = 25 °C.
Fig.3
Fig.4
Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
0.8
VF (V)
1.0
Typical forward current as a function of
forward voltage.
MBG783
MBG782
0
10
handbook, halfpage
handbook, halfpage
12
SZ
(mV/K)
SZ
(mV/K)
4V3
11
10
−1
9V1
5
3V9
8V2
7V5
6V8
3V6
−2
6V2
5V6
5V1
0
3V3
4V7
3V0
2V4
2V7
−3
0
20
40
IZ (mA)
−5
60
0
4
8
BZX79-B/C2V4 to BZX79-B/C4V3.
Tj = 25 to 150 °C.
BZX79-B/C4V7 to BZX79-B/C12.
Tj = 25 to 150 °C.
Fig.5
Fig.6
Temperature coefficient as a function of
working current; typical values.
2002 Feb 27
7
12
16
IZ (mA)
20
Temperature coefficient as a function of
working current; typical values.
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
PACKAGE OUTLINE
Hermetically sealed glass package; axial leaded; 2 leads
SOD27
(1)
b
D
G1
L
L
DIMENSIONS (mm are the original dimensions)
G1
UNIT
b
max.
D
max.
max.
L
min.
mm
0.56
1.85
4.25
25.4
0
1
2 mm
scale
Note
1. The marking band indicates the cathode.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
EIAJ
SOD27
A24
DO-35
SC-40
2002 Feb 27
8
EUROPEAN
PROJECTION
ISSUE DATE
97-06-09
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Feb 27
9
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
NOTES
2002 Feb 27
10
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
NOTES
2002 Feb 27
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA74
© Koninklijke Philips Electronics N.V. 2002
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613514/03/pp12
Date of release: 2002
Feb 27
Document order number:
9397 750 09387