A1015LT1 A1015LT1 TRANSISTOR (PNP) * “G” Lead(Pb)-Free SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25 ) 2. 4 1. 3 TJ, Tstg: -55 0. 95 0. 4 2. 9 Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range 0. 95 0.2 1. 9 PCM: 1. 0 Power dissipation Unit: mm to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100µA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO Ic= -0.1mA, IB =0 - 50 V V(BR)EBO IE= -10µA, IC=0 -5 V Collector cut-off current ICBO VCB=-50V , IE=0 -0.1 µA Collector cut-off current ICEO VCE= -50V , IB=0 -0.1 µA Emitter cut-off current IEBO VEB=- 5V , IC=0 -0.1 µA HFE(1) VCE=-6V, IC= -2mA Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB= -10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100 mA, IB= -10mA -1.1 V Emitter-base breakdown voltage DC current gain fT Transition frequency VCE=-10V, IC= -1mA f=30MHz 130 400 80 MHz CLASSIFICATION OF HFE(1) Rank Range MARKING WEITRON http://www.weitron.com.tw L H 130-200 200- 40 0 BA A1015LT1 WEITRON http://www.weitron.com.tw