LED DOT MATRIX BL-M46X581XX Features: 121.50mm (4.6”) Φ10.0 dot matrix LED display, BI-COLOR Low current operation. Excellent character appearance. Easy mounting on P.C. Boards or sockets. I.C. Compatible. ROHS Compliance. Electrical-optical characteristics: (Ta=25 ) (Test Condition: IF=20mA) Part No Row Cathode Column Anode Row Anode Column Cathode BL-M46A581SG-XX BL-M46B581SG-XX BL-M46A581EG-XX Emitted Color Super Red BL-M46B581EG-XX BL-M46A581DUG-X BL-M46B581DUG-X X X . w w XX BL-M46B581UEUGXX -XX: Surface / Lens color 0 Number Ref Surface Color White Epoxy Color Water clear w Iv λP (nm) Material AlGaInP 660 Green GaP/GaP 570 Orange GaAsP/Ga P 635 Typ TYP.(mcd) m o c . x u l t e b Max 2.10 2.50 155 2.20 2.50 140 2.10 2.50 120 2.20 2.50 140 GaP/GaP 570 Ultra Red AlGaInP 660 2.10 2.50 180 Ultra Green AlGaInP 574 2.20 2.50 200 Ultra Orange AlGaInP 630 2.10 2.50 170 Ultra Green AlGaInP 574 2.20 2.50 200 Green BL-M46A581UEUG- VF Unit:V Chip 1 2 3 4 5 Black White diffused Gray Red Diffused Red Green Diffused Green Yellow Diffused Absolute maximum ratings (Ta=25°C) S G E Forward Current IF Power Dissipation Pd Reverse Voltage VR Peak Forward Current IPF (Duty 1/10 @1KHZ) Operation Temperature TOPR Storage Temperature TSTG 30 75 5 30 80 5 30 80 5 30 75 5 30 75 5 30 65 5 mW 150 150 150 150 150 150 mA Lead Soldering Temperature TSOL D UG UE U nit Parameter -40 to +80 -40 to +85 Max.260±5 for 3 sec Max. (1.6mm from the base of the epoxy bulb) APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 1 of 3 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] mA V LED DOT MATRIX BL-M46X581XX Package configuration & Internal circuit diagram m o c . x . w w u l t e b w Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is ±0.25(0.01")unless otherwise noted. 3. Specifications are subject to change without notice. APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 2 of 3 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] LED DOT MATRIX BL-M46X581XX Typical electrical-optical characteristics curves: (A) 1.0 (B) (C) (D) (2) (3) (8) (4) (1) (6) (5) (9) (10) 0.5 0 350 400 500 450 550 600 650 700 750 800 850 900 950 1000 Wavelength(nm) RELATIVE INTENSITY Vs WAVELENGTH( p ) (1) - GaAsP/GaAs 655nm/Red (2) - GaP 570nm/Yellow Green (3) - GaAsP/GaP 585nm/Yellow (4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red (5) - GaP 700nm/Bright Red (6) - GaAlAs/GaAs 660nm/Super Red (8) - GaAsP/GaP 610nm/Super Red 8 64 5 2 3 40 e b . w w 30 20 10 0 1.2 1.6 2.0 2.4 1 3.0 2.6 2.0 1.0 20 FORWARD VOLTAGE (Vf) FORWARD CURRENT VS. FORWARD VOLTAGE 1 5 4 2 3 60 80 0.2 -10 0 10 20 30 40 AMBIENT TEMPERATURE Ta( ) 50 60 30 20 1 6 2,4,8,A 3 5 10 0 100 20 40 60 80 100 AMBIENT TEMPERATURE Ta( ) FORWARD CURRENT VS. AMBIENT TEMPERATURE 300KHz 3KHz 10KHz 1KHz 100KHz F-REFRESH RATE 4 3 2 -20 40 3KHz 300Hz 30KHz 100KHz 10KHz 1KHz 100Hz 10 9 8 7 6 5 Ipeak MAX. IDC MAX. 0.5 0.1 -30 40 10 9 8 7 6 5 Ipeak MAX. IDC MAX. RELATIVE LUMINOUS INTENSITY 1 B FORWARD CURRENT (mA) RELATIVE LUMINOUS INTENSITY VS. FORWARD CURRENT w 3 2 5 50 0 3.0 m o c . x lt u 4.0 FORWARD CURRENT(mA) FORWARD CURRENT(mA) RELATIVE LUMINOUS INTENSITY 1 50 (9) - GaAlAs 880nm (10) - GaAs/GaAs & GaAlAs/GaAs 940nm (A) - GaN/SiC 430nm/Blue (B) - InGaN/SiC 470nm/Blue (C) - InGaN/SiC 505nm/Ultra Green (D) - InGaAl/SiC 525nm/Ultra Green 4 3 2 70 1 1 10 100 1000 tp-PULSE DURATION uS (1,2,3,4,6,8,B.D.J.K) NOTE:25 10,000 1 1 10 100 1000 tp-PULSE DURATION uS (5) free air temperature unless otherwise specified APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 3 of 3 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] 10,000