ON MSD6100 Dual switching diode common cathode Datasheet

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SEMICONDUCTOR TECHNICAL DATA
Anode 1
2 Anode
1
2
3
CASE 29–04, STYLE 3
TO–92 (TO–226AA)
3 Cathode
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
100
Vdc
Recurrent Peak Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc
Power Dissipation @ TA = 25°C
Derate above 25°C
PD(1)
625
5.0
mW
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg(1)
– 55 to +135
°C
Peak Forward Surge Current
(Pulse Width = 10 µsec)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Breakdown Voltage
(I(BR) = 100 µAdc)
Symbol
Min
Max
Unit
V(BR)
100
—
Vdc
—
—
—
5.0
0.1
50
0.55
0.67
0.75
0.7
0.82
1.1
µAdc
Reverse Current
(VR = 100 Vdc)
(VR = 50 Vdc)
(VR = 50 Vdc, TA = 125°C)
IR
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 100 mAdc)
VF
Capacitance
(VR = 0)
C
—
1.5
pF
Reverse Recovery Time
(IF = IR = 10 mAdc, VR = 5.0 Vdc, irr = 1.0 mAdc)
trr
—
4.0
ns
Vdc
1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25°C,
Derate above 25°C  8.0 mW/°C, TJ = –65 to +150°C, θJC = 125°C/W.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1997
1
MSD6100
TYPICAL CHARACTERISTICS
Curves Applicable to Each Anode
10
100
IR , REVERSE CURRENT (µA)
IF, FORWARD CURRENT (mA)
TA = 150°C
TA = 85°C
10
TA = – 40°C
1.0
TA = 25°C
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
0
1.2
10
Figure 1. Forward Voltage
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
50
Figure 2. Leakage Current
CD, DIODE CAPACITANCE (pF)
1.0
0.9
0.8
0.7
0.6
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MSD6100
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
Motorola Small–Signal Transistors, FETs and Diodes Device Data
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
3
MSD6100
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4
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MSD6100/D
Motorola Small–Signal Transistors, FETs and Diodes Device
Data
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