Order this document by MSD6100/D SEMICONDUCTOR TECHNICAL DATA Anode 1 2 Anode 1 2 3 CASE 29–04, STYLE 3 TO–92 (TO–226AA) 3 Cathode MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Recurrent Peak Forward Current IF 200 mAdc IFM(surge) 500 mAdc Power Dissipation @ TA = 25°C Derate above 25°C PD(1) 625 5.0 mW mW/°C Operating and Storage Junction Temperature Range TJ, Tstg(1) – 55 to +135 °C Peak Forward Surge Current (Pulse Width = 10 µsec) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Breakdown Voltage (I(BR) = 100 µAdc) Symbol Min Max Unit V(BR) 100 — Vdc — — — 5.0 0.1 50 0.55 0.67 0.75 0.7 0.82 1.1 µAdc Reverse Current (VR = 100 Vdc) (VR = 50 Vdc) (VR = 50 Vdc, TA = 125°C) IR Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 100 mAdc) VF Capacitance (VR = 0) C — 1.5 pF Reverse Recovery Time (IF = IR = 10 mAdc, VR = 5.0 Vdc, irr = 1.0 mAdc) trr — 4.0 ns Vdc 1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25°C, Derate above 25°C 8.0 mW/°C, TJ = –65 to +150°C, θJC = 125°C/W. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 1 MSD6100 TYPICAL CHARACTERISTICS Curves Applicable to Each Anode 10 100 IR , REVERSE CURRENT (µA) IF, FORWARD CURRENT (mA) TA = 150°C TA = 85°C 10 TA = – 40°C 1.0 TA = 25°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.001 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 0 1.2 10 Figure 1. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50 Figure 2. Leakage Current CD, DIODE CAPACITANCE (pF) 1.0 0.9 0.8 0.7 0.6 0 2 4 6 8 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Capacitance 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MSD6100 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE 3 MSD6100 Motorola reserves the right to make changes without further notice to any products herein. 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