MSCD200B Glass Passivated Rectifier Diode Modules VRRM 800 to 1800V IFAV 200 Amp Applications y y Circuit y Non-controllable rectifiers for AC/AC converters Line rectifiers for transistorized AC motor controllers Field supply for DC motors Features y y y Blocking voltage:800 to 1800V Heat transfer through aluminum oxide DBC ceramic isolated metal baseplate Glass passivated chip Module Type TYPE MSCD200B-08 MSCD200B-12 MSCD200B-16 MSCD200B-18 MSAD200B-08 MSAD200B-12 MSAD200B-16 MSAD200B-18 MSKD200B-08 MSKD200B-12 MSKD200B-16 MSKD200B-18 Maximum Ratings Symbol Conditions Single phase ,half wave 180°conduction Tc=95℃ IFAV Single phase ,half wave 180°conduction Tc=102℃ IF(RMS) t=10mS Tvj =45℃ IFSM 2 t=10mS Tvj =45℃ it a.c.50HZ;r.m.s.;1min Visol Tvj Tstg VRRM VRSM 800V 1200V 1600V 1800V 900V 1300V 1700V 1900V Values Units 200 240 A A 6800 A 231200 A2s 3000 V -40 to +150 ℃ -40 to +125 Mt Ms To terminals(M6) To heatsink(M6) 5±15% 5±15% ℃ Nm Nm Weight Module 240 g Conditions Values Units Per diode 0.18 ℃/W Module 0.05 ℃/W Thermal Characteristics Symbol Rth(j-c) Rth(c-s) Electrical Characteristics Symbol Conditions VFM IRD T=25℃ IF =300A Tvj=150℃ VRD=VRRM Document Number: MSCD200B Aug.20, 2010 Values Min. － － Typ. 1.18 － Max. 1.45 9 Units V mA www.smsemi.com 1 MSCD200B Performance Curves 350 250 W A rec.120 sin.180 DC DC sin.180 200 rec.60 rec.120 rec.30 150 rec.60 175 100 rec.30 50 Pvtot ID 0 0 ID 140 0 A 280 0 Tc 50 100 ℃ 150 Fig2.Forward Current Derating Curve Fig1. Power dissipation 0.3 8000 ℃/ W A 50HZ Zth(j-C) 0.15 4000 0 0 0.001 0.01 0.1 1 10 1 S 100 10 cycles 100 Fig4. Max Non-Repetitive Forward Surge Current Fig3. Transient thermal impedance 400 A 300 200 typ. max. 100 25℃ - - -125℃ IF 0 0 VF 0.5 1.0 1.5 V 2.0 Fig5. Forward Characteristics Document Number: MSCD200B Aug.20, 2010 www.smsemi.com 2 MSCD200B Package Outline Information CASE: D2-1 Dimensions in mm Document Number: MSCD200B Aug.20, 2010 www.smsemi.com 3