BZT52C2V4-BZT52C75 500mW, 5% Tolerance SMD Zener Diode Small Signal Diode SOD-123F B Features C A Wide zener voltage range selection : 2.4V to 75V VZ Tolerance Selection of ±5% D Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate E Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code F Unit (mm) Unit (inch) Min Max Min Case : Flat lead SOD-123 small outline plastic package A 1.5 1.7 0.059 0.067 Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed B 3.3 3.7 0.130 0.146 C 0.5 0.7 0.020 0.028 High temperature soldering guaranteed: 260 °C/10s D 2.5 2.7 0.098 0.106 Polarity : Indicated by cathode band E 0.8 1.0 0.031 0.039 Weight : 8.85±0.5 mg F 0.05 0.2 0.002 0.008 Dimensions Mechanical Data Max Ordering Information Part No. Package Packing BZT52Bxx RH SOD-123F 3Kpcs / 7" Reel Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol Value Units Power Dissipation PD 500 mW Forward Voltage IF=10mA VF 1 V Thermal Resistance (Junction to Ambient) (Note 1) RθJA 350 °C/W TJ, TSTG -65 to + 150 °C Junction and Storage Temperature Range Notes:1. Valid provided that electrodes are kept at ambient temperature Zener I vs. V Characteristics Current IF VZM VZ VBR VR IR IZK VF Voltage IZT IZM BreakdownRegion Leakage Region Forward Region VBR : Voltage at I ZK IZK : Test current for voltage V BR ZZK : Dynamic impedance at I ZK IZT : Test current for voltage V Z VZ : Voltage at current I ZT ZZT : Dynamic impedance at I ZT IZM : Maximum steady state current VZM : Voltage at I ZM Version : A09 BZT52C2V4-BZT52C75 500mW, 5% Tolerance SMD Zener Diode Small Signal Diode Electrical Characteristics Ta = 25°C unless otherwise noted VF Forward Voltage = 1V Maximum @ IF = 10 mA for all part numbers VZ @ IZT (Volt) IZT(mA) ZZT @ IZT(Ω) Max IZK(mA) 2.52 5 100 1 564 45 1 2.84 5 100 1 564 18 1 2.85 3.15 5 100 1 564 9 1 3.3 3.14 3.47 5 95 1 564 4.5 1 3.6 3.42 3.78 5 90 1 564 4.5 1 BZT52C3V9 3.9 3.71 4.1 5 90 1 564 2.7 1 BZT52C4V3 4.3 4.09 4.52 5 90 1 564 2.7 1 BZT52C4V7 4.7 4.47 4.94 5 80 1 470 2.7 2 BZT52C5V1 5.1 4.85 5.36 5 60 1 451 1.8 2 BZT52C5V6 5.6 5.32 5.88 5 40 1 376 0.9 2 BZT52C6V2 6.2 5.89 6.51 5 10 1 141 2.7 4 BZT52C6V8 6.8 6.46 7.14 5 15 1 75 1.8 4 BZT52C7V5 7.5 7.11 7.86 5 15 1 75 0.9 5 BZT52C8V2 8.2 7.48 8.61 5 15 1 75 0.63 5 BZT52C9V1 9.1 8.65 9.56 5 15 1 94 0.45 6 BZT52C10 10 9.5 10.5 5 20 1 141 0.18 7 BZT52C11 11 10.45 11.55 5 20 1 141 0.09 8 BZT52C12 12 11.4 12.6 5 25 1 141 0.09 8 BZT52C13 13 12.35 13.65 5 30 1 160 0.09 8 BZT52C15 15 14.25 15.75 5 30 1 188 0.045 10.5 BZT52C16 16 15.2 16.8 5 40 1 188 0.045 11.2 BZT52C18 18 17.1 18.9 5 45 1 212 0.045 12.6 BZT52C20 20 19 21 5 55 1 212 0.045 14 BZT52C22 22 20.9 23.1 5 55 1 235 0.045 15.4 BZT52C24 24 22.8 25.2 5 70 1 235 0.045 16.8 BZT52C27 27 25.65 28.35 2 80 0.5 282 0.045 18.9 BZT52C30 30 28.5 31.5 2 80 0.5 282 0.045 21 BZT52C33 33 31.35 34.65 2 80 0.5 306 0.045 23 BZT52C36 36 34.2 37.8 2 90 0.5 329 0.045 25.2 BZT52C39 39 37.05 40.95 2 130 0.5 329 0.045 27.3 BZT52C43 43 40.85 45.15 2 150 0.5 353 0.045 30.1 BZT52C47 47 44.65 49.35 2 170 0.5 353 0.045 33 BZT52C51 51 48.45 53.55 2 180 0.5 376 0.045 35.7 BZT52C56 56 53.2 58.8 2 200 0.5 400 0.045 39.2 BZT52C62 62 58.9 65.1 2 215 0.5 423 0.045 43.4 BZT52C68 68 64.6 71.4 2 240 0.5 447 0.045 47.6 BZT52C75 75 71.25 78.75 2 255 0.5 470 0.045 52.5 Part Number Nom Min Max BZT52C2V4 2.4 2.28 BZT52C2V7 2.7 2.57 BZT52C3V0 3 BZT52C3V3 BZT52C3V6 ZZK @ IZK(Ω) IR @ VR(μA) Max Max VR(V) Notes: 1. The Zener Voltage (VZ) is tested under pulse condition of 10ms. 2. The device numbers listed have a standard tolerance on the nominal zener voltage of ±5%. 3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage tolerances, contact your nearest Taiwan semiconductor representative. 4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value equal to 10% of the DC zener current (IZT or IZK) is superimposed to IZT or IZK. Version : A09 BZT52C2V4-BZT52C75 500mW, 5% Tolerance SMD Zener Diode Small Signal Diode Rating and Sharacteristic Curves FIG 2 Zener Breakdown Characteristics FIG 1 Typical Forward Characteristics 100 Zener Current (mA) Forward Current (mA) 1000 100 Ta=25°C 10 Ta=25°C 10 1 0.10 1 0.01 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 1 2 3 Forward Voltage (V) 6 7 8 9 10 11 12 FIG 4 Admissible Power Disspation Curve FIG 3 Zener Breakdown Characteristics Power Dissipation (mW) 700 10 Zener Current (mA) 5 Zener Voltage (V) 100 1 0 600 500 400 300 200 100 0 0 15 25 35 45 55 65 0 75 50 Zener Voltage (V) 100 150 200 Ambient Tempeture (°C) FIG 5 Typical Capacitance FIG 6 Effect of Zener Voltage on Impedence 1000 1000 100 Dynamic Impedence (Ώ) Capacitance(pF) 4 100 1V Bias Ta=150°C 10 Bias at 50% of VZ(Nom) Iz=1mA Ta=25°C Iz=5mA 10 Iz=20m 1 1 1 10 Zener Voltage (V) 100 1 10 100 Zener Voltage (V) Version : C09