CDIL BC857BW Pnp silicon planar epitaxial transistor Datasheet

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC856W , 857W, 858W
SOT-323
Formed SMD Package
Marking
BC856W =3D
BC857AW =3E
BC856AW =3A
BC857BW =3F
BC856BW =3B
BC857CW =3G
BC857W =3H
BC858W =3M
General Purpose Switching and Amplification.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL BC856W
VCBO
Collector Base Voltage
80
VCEO
Collector Emitter Voltage
65
V
Emitter Base Voltage
5
EBO
*Ptot
Storage Temperature
Tstg
Junction Temperature
Tj
Operating Ambient Temperature
5
100
200
200
200
IC
ICM
IBM
Collector Current (DC)
Peak Collector Current
Peak Base Current
Power Dissipation upto Tamb=25ºC
BC858W
30
30
BC857W
50
45
UNITS
V
V
5
V
mA
mA
mA
mW
- 65 to +150
ºC
150
Tamb
ºC
- 65 to +150
ºC
THERMAL RESISTANCE
From junction to ambient
*Rth (j-a)
625
K/W
*Sot-323 standard mounting condition
ELECTRICAL CHARACTERISTICS (Tamb=25ºC unless specified otherwise)
DESCRIPTION
Collector Cut Off Current
Emitter Cut Off Current
SYMBOL
TEST CONDITION
ICBO
MAX
UNITS
VCB=30V, IE=0
15
nA
VCB=30V, IE=0, Tj=150 ºC
4
µA
VEB=5V, IC=0
100
nA
IEBO
MIN
TYP
BC856W_BC858W Rev170210E
Continental Device India Limited
Data Sheet
Page 1 of 4
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC856W , 857W, 858W
SOT-323
Formed SMD Package
ELECTRICAL CHARACTERISTICS (Tamb=25ºC unless specified otherwise)
DESCRIPTION
DC Current Gain
SYMBOL
TEST CONDITION
hFE
IC=2mA, VCE=5V
BC856W
BC857W,BC858W
BC856AW,BC857AW
BC856BW,BC857BW
BC857CW
MIN
TYP
125
125
125
220
420
MAX
UNITS
475
800
250
475
800
VCE(Sat)
IC=10mA, IB=0.5mA
0.30
V
0.60
Base Emitter Saturation Voltage
VBE(Sat)
*IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
*IC=100mA, IB=5mA
V
V
V
Base Emitter On Voltage
VBE (on)
IC=2mA, VCE=5V
0.75
V
IC=10mA, VCE=5V
0.82
V
Collector Emitter Saturation Voltage
0.70
0.85
0.60
Collector Capacitance
Cc
IE=ie=0, VCB=10V, f=1MHz
3.0
pF
Emitter Capacitance
Ce
IC=ic=0, VEB=0.5V, f=1MHz
12
pF
Transition Frequency
fT
IC=10mA, VCE=5V, f=100MHz
NF
IC=0.2mA, VCE=5V
Noise Figure
100
MHz
10
dB
Rs=2kΩ, f=1KHz, B=200Hz
**Pulse test tp=300µ
µ s, δ < 0.02
BC856W_BC858W Rev170210E
Continental Device India Limited
Data Sheet
Page 2 of 4
BC856W , 857W, 858W
SOT-323
Formed SMD Package
BC856W_BC858W Rev170210E
Continental Device India Limited
Data Sheet
Page 3 of 4
Customer Notes
BC856W , 857W, 858W
SOT-323
Formed SMD Package
Component Disposal Instructions
1. CDIL Semiconductor Devices are RoHS compliant, customers are requested to please
dispose as per prevailing Environmental Legislation of their Country.
2. In Europe, please dispose as per EU Directive 2002/96/EC on Waste Electrical and
Electronic Equipment (WEEE).
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s) best suited for
application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to
confirm that the Device(s) meet functionality parameters for your application. The information furnished in the Data Sheet and on
the CDIL Web Site/CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or
incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any
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use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Semiconductor
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CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 4141 1112 Fax + 91-11-2579 5290, 4141 1119
[email protected]
www.cdilsemi.com
BC856W_BC858W Rev170210E
Continental Device India Limited
Data Sheet
Page 4 of 4
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