MMBT2907A SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) Features ● Epitaxial planar die construction ● Complementary NPN Type available(MMBT2222A) SOT- 23 Marking: ● 2F Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -600 PC Collector Power Dissipation 250 mW Thermal Resistance From Junction To Ambient 500 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA C mA B E Electrical Characteristics (Ta=25℃ Unless otherwise specified） Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO* IC=-10mA,IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -20 nA Base cut-off current IEBO VEB=-3V, IC =0 -10 nA Collector cut-off current ICEX VCE=-30 V, VBE(off) =-0.5V -50 nA hFE(1) VCE=-10V,IC=-150mA 100 hFE(2) VCE=-10V,IC=-0.1mA 75 hFE(3) VCE=-10V,IC=-1mA 100 hFE(4) VCE=-10V,IC=-10mA 100 hFE(5) VCE=-10V,IC=-500mA 50 VCE(sat)* IC=-150mA,IB=-15mA -0.4 V VCE(sat)* IC=-500mA,IB=-50mA -1.6 V VBE(sat)* IC=-150mA,IB=-15mA -1.3 V VBE(sat)* IC=-500mA,IB=-50mA -2.6 V DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency fT Delay time td Rise time tr Storage time tS Fall time tf VCE=-20V,IC=-50mA,f=100MHz 300 200 VCE=-30V,IC=-150mA,B1=-15mA VCE=-6V,IC=-150mA, IB1=- IB2=- 15mA MHz 10 ns 25 ns 225 ns 60 ns *Pulse test: tp≤300μs, δ≤0.02. High Diode Semiconductor 1 Typical Characteristics hFE Static Characteristic -0.25 500 —— IC COMMON EMITTER VCE=-10V -800uA -0.20 hFE -640uA -0.15 DC CURRENT GAIN COLLECTOR CURRENT 400 -720uA IC (A) COMMON EMITTER Ta=25℃ -560uA -480uA -0.10 -400uA -320uA -240uA -0.05 300 Ta=100℃ Ta=25℃ 200 100 -160uA IB=-80uA -0.00 -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE VCEsat -0.9 —— -10 VCE 0 -0.1 -12 -10 COLLECTOR CURRENT IC VBEsat -1.2 β=10 -100 IC -0.6 Ta=100℃ -0.3 Ta=25℃ -0.0 —— IC Ta=25℃ -0.8 Ta=100℃ -0.4 -0.0 -1 -10 -100 COLLECTOR CURRENT IC IC -1 -600 (mA) -10 -100 COLLECTOR CURRENT —— VBE 100 -600 Cob/ Cib IC —— VCB/ VEB f=1MHz IE=0/ IC=0 (pF) IC (mA) Ta=25℃ Cib -100 CAPACITANCE Ta=25℃ -1 -0.1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 BASE-EMMITER VOLTAGE VBE (V) Pc 300 —— Cob C Ta=100℃ -10 -600 (mA) COMMON EMITTER VCE=-10V COLLECTOR CURRENT -600 (mA) β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -1 (V) 10 1 -0.1 -1 REVERSE VOLTAGE -10 V -20 (V) Ta COLLECTOR POWER DISSIPATION Pc (mW) 250 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) High Diode Semiconductor 2 SOT-23 Package Outline Dimensions SOT-23 Suggested Pad Layout JSHD JSHD High Diode Semiconductor 3 Reel Taping Specifications For Surface Mount Devices-SOT-23 30 High Diode Semiconductor 4