PD -96297 IRFH5010PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) Qg (typical) RG (typical) ID 100 V 9.0 mΩ 65 1.2 nC 100 (@Tc(Bottom) = 25°C) Ω h PQFN 5X6 mm A Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications Features and Benefits Benefits Features Low RDSon (< 9 mΩ) Low Thermal Resistance to PCB (<0.5°C/W) 100% Rg tested Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number IRFH5010TRPBF IRFH5010TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Lower Conduction Losses Increased Power Density Increased Reliability results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 400 Tape and Reel Note Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range g g c g Max. 100 ± 20 13 11 100 h 70 400 3.6 250 0.029 -55 to + 150 Units V A W W/°C °C Notes through are on page 8 www.irf.com 1 03/29/10 IRFH5010PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Output Charge Min. 100 ––– ––– 2.0 ––– ––– ––– ––– ––– 206 ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.11 7.5 ––– -8.3 ––– ––– ––– ––– ––– 65 11 4.3 20 30 24 18 Max. Units Conditions ––– V VGS = 0V, ID = 250uA ––– V/°C Reference to 25°C, ID = 1.0mA 9.0 mΩ VGS = 10V, ID = 50A 4.0 V VDS = VGS, ID = 150µA ––– mV/°C VDS = 100V, VGS = 0V 20 µA 250 VDS = 100V, VGS = 0V, TJ = 125°C VGS = 20V 100 nA -100 VGS = -20V ––– S VDS = 25V, ID = 50A 98 VDS = 50V ––– ––– VGS = 10V nC ––– ID = 50A ––– ––– ––– nC VDS = 16V, VGS = 0V Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– ––– ––– 1.2 9 12 27 8.6 4340 425 162 ––– ––– ––– ––– ––– ––– ––– ––– Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) e Ω ns pF VDD = 50V, VGS = 10V ID = 50A RG=1.3Ω VGS = 0V VDS = 25V ƒ = 1.0MHz Avalanche Characteristics EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current c Max. 227 50 Typ. ––– ––– d Units mJ A Diode Characteristics Parameter Continuous Source Current IS ISM VSD trr Qrr ton (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time c Min. Typ. Max. Units ––– ––– 100 ––– ––– h 400 A Conditions MOSFET symbol showing the integral reverse D G S p-n junction diode. TJ = 25°C, IS = 50A, VGS = 0V TJ = 25°C, IF = 50A, VDD = 50V di/dt = 500A/µs ––– ––– 1.3 V ––– 34 51 ns ––– 256 384 nC Time is dominated by parasitic Inductance e e Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA (<10s) 2 f f Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient Parameter g g Typ. ––– ––– ––– ––– Max. 0.5 15 35 22 Units °C/W www.irf.com IRFH5010PbF 1000 1000 VGS 15V 10V 7.00V 5.00V 4.50V 4.25V 4.00V 3.75V ID, Drain-to-Source Current (A) 100 10 BOTTOM TOP ID, Drain-to-Source Current (A) TOP 100 1 3.75V 0.1 BOTTOM VGS 15V 10V 7.00V 5.00V 4.50V 4.25V 4.00V 3.75V 10 3.75V ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 150°C Tj = 25°C 0.01 0.1 1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 100 Fig 2. Typical Output Characteristics 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 100 T J = 150°C 10 T J = 25°C 1 VDS = 50V ≤60µs PULSE WIDTH ID = 50A VGS = 10V 2.0 1.5 1.0 0.5 0.1 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 -60 -40 -20 0 Fig 4. Normalized On-Resistance Vs. Temperature Fig 3. Typical Transfer Characteristics 100000 14 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED ID= 37A VGS, Gate-to-Source Voltage (V) C rss = C gd C oss = C ds + C gd 10000 Ciss 1000 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics ID, Drain-to-Source Current (A) 1 Coss Crss 100 12 10 VDS= 80V VDS= 50V VDS= 20V 8 6 4 2 0 10 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage www.irf.com 0 10 20 30 40 50 60 70 80 90 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage 3 IRFH5010PbF 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 150°C 100 TJ = 25°C 10 1 OPERATION IN THIS AREA LIMITED BY RDS(on) 1000 100µsec 100 1msec 10 10msec 1 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 0.10 1.6 10 100 1000 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4.5 120 VGS(th) , Gate threshold Voltage (V) Limited By Package 100 ID, Drain Current (A) 1 80 60 40 20 4.0 3.5 3.0 2.5 2.0 ID = 1.0A 1.5 ID = 1.0mA ID = 500µA ID = 150µA 1.0 0.5 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( °C ) T C , Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case (Bottom) Temperature Fig 10. Threshold Voltage Vs. Temperature Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com 25 1000 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRFH5010PbF ID = 50A 20 T J = 125°C 15 10 T J = 25°C 5 0 2 4 6 8 10 12 14 16 18 20 ID 5.4A 11.6A BOTTOM 50A TOP 800 600 400 200 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A Fig 14a. Unclamped Inductive Test Circuit VDS VGS RG RD Fig 14b. Unclamped Inductive Waveforms VDS 90% D.U.T. + -VDD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 Fig 15a. Switching Time Test Circuit www.irf.com I AS 0.01Ω tp 10% VGS td(on) tr td(off) tf Fig 15b. Switching Time Waveforms 5 IRFH5010PbF D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs L DUT 0 1K S VCC Vgs(th) Qgs1 Qgs2 Fig 17. Gate Charge Test Circuit 6 Qgd Qgodr Fig 18. Gate Charge Waveform www.irf.com IRFH5010PbF PQFN 5x6 Outline "B" Package Details For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7 IRFH5010PbF PQFN 5x6 Outline "B" Tape and Reel Qualification information† Qualification level Moisture Sensitivity Level RoHS compliant Indus trial (per JE DE C JE S D47F PQFN 5mm x 6mm †† ††† guidelines ) MS L1 ††† (per JE DE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.181mH, RG = 50Ω, IAS = 50A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Rθ is measured at TJ of approximately 90°C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test capability Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/2010 8 www.irf.com