MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5KM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR5KM OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 E 0.75 ± 0.15 2.6 ± 0.2 ➀➁➂ ➁ .................................................................. 5A ● VDRM ...................................................... 400V / 600V ● IFGT ! , IRGT ! , I RGT # ................... 15mA (10mA) ✽2 ● IT (RMS) ● UL ➀ 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 ✽ Measurement point of case temperature ➀ T1 TERMINAL ➁ T2 TERMINAL ➂ ➂ GATE TERMINAL Recognized : File No. E80271 TO-220FN APPLICATION Control of heater such as electric rice cooker, electric pot MAXIMUM RATINGS Symbol Voltage class Parameter voltage✽1 V DRM Repetitive peak off-state V DSM Non-repetitive peak off-state voltage✽1 Symbol Parameter 8 12 400 500 600 720 Conditions I T (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Tc=103°C I TSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive I 2t I 2t for fusing Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM Peak gate power dissipation PG (AV) Average gate power dissipation VGM I GM Peak gate voltage Peak gate current Tj T stg Junction temperature Storage temperature — Viso Weight Isolation voltage Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case Unit V V Ratings 5 50 10.4 Unit A A A2s 3 W 0.3 10 W V 2 –40 ~ +125 A °C –40 ~ +125 2.0 °C g 2000 V ✽1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5KM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Parameter Limits Test conditions Min. — Typ. — Max. 2.0 I DRM Repetitive peak off-state current Tj=125°C, VDRM applied V TM V FGT ! On-state voltage Tc=25°C, ITM=7A, Instantaneous measurement — — — — 1.5 1.5 V RGT ! V RGT # Gate trigger voltage ✽2 Tj=25°C, V D=6V, RL=6Ω, RG=330Ω # — — — — 1.5 1.5 ! — — 15 ✽2 — — — — 15 ✽2 15 ✽2 — — — 3.8 — 50 ! @ I FGT ! I RGT ! Gate trigger I RGT # VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM Rth (j-c) Thermal resistance Junction to case ✽3 0.2 — Rth (j-a) Thermal resistance Junction to ambient — current ✽2 @ Tj=25°C, V D=6V, RL=6Ω, RG=330Ω # Unit mA V V V V mA mA mA V °C/ W °C/ W ✽2. High sensitivity (I GT≤ 10mA) is also available. (IGT item ➀) ✽3. The contact thermal resistance R th (c-f) in case of greasing is 0.5°C/W. PERFORMANCE CURVES RATED SURGE ON-STATE CURRENT 102 7 5 3 2 101 7 5 3 2 100 TC = 25°C 100 7 5 3 2 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTICS 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5KM 102 GATE VOLTAGE (V) 7 5 3 2 VGM = 10V 101 PGM = 3W 7 5 3 VGT = 1.5V 2 100 7 5 3 2 IGM = 2A Tj = 25°C IGT = 15mA PGM = 0.3W VGD = 0.2V 10–1 1 10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) 100 (%) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 TYPICAL EXAMPLE IRGT III 102 7 5 4 3 2 IFGT I IRGT I 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) 100 (%) GATE CURRENT (mA) 102 2 3 5 7 103 2 3 5 7 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) JUNCTION TEMPERATURE (°C) 102 7 5 4 3 2 101 7 5 4 3 2 100 2 10 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) TRANSIENT THERMAL IMPEDANCE (°C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) 10 9 8 360° 7 CONDUCTION RESISTIVE, 6 INDUCTIVE 5 LOADS 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5KM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 140 AMBIENT TEMPERATURE (°C) CASE TEMPERATURE (°C) 160 120 100 80 60 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 1 2 3 4 5 6 7 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 120 80 60 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, 20 INDUCTIVE LOADS NATURAL CONVECTION 40 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 HOLDING CURRENT (Tj = t°C) HOLDING CURRENT (Tj = 25°C) 100 (%) RMS ON-STATE CURRENT (A) 100 (%) 7 5 101 7 5 4 3 2 3 4 5 6 7 8 TYPICAL EXAMPLE 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) LACHING CURRENT VS. JUNCTION TEMPERATURE 103 102 2 2 3 2 HOLDING CURRENT VS. JUNCTION TEMPERATURE 7 5 4 3 1 REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) 80 0 RMS ON-STATE CURRENT (A) ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, 7 5 DISTRIBUTION TYPICAL EXAMPLE VD = 12V 100 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) LACHING CURRENT (mA) AMBIENT TEMPERATURE (°C) RMS ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 100 100 t2.3 60 60 t2.3 100 0 8 120 120 t2.3 3 2 102 7 5 3 2 101 7 5 DISTRIBUTION T2+, G– TYPICAL EXAMPLE ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, 3 + + 2 T2–, G – TYPICAL T2 , G EXAMPLE 100 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5KM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) TYPICAL EXAMPLE 100 (%) 160 BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 Tj = 125°C 120 100 I QUADRANT 80 60 40 III QUADRANT 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 JUNCTION TEMPERATURE (°C) RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 103 IRGT III 7 5 4 3 6Ω TYPICAL EXAMPLE A 6V IRGT I 2 RG V 102 7 5 4 3 TYPICAL EXAMPLE 140 BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE V RG TEST PROCEDURE TEST PROCEDURE IFGT I A 6V 6Ω 2 A 6V 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE TRIGGER PULSE WIDTH (µs) V RG TEST PROCEDURE Feb.1999