Comchip MMBT2222LT1 General purpose transistors npn silicon Datasheet

MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1 is a Preferred Device
General Purpose Transistors
NPN Silicon
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Features
• Pb−Free Packages are Available
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
Unit
VCEO
MMBT2222LT1
MMBT2222ALT1
Collector −Base Voltage
Value
Vdc
30
40
VCBO
VEBO
MMBT2222LT1
MMBT2222ALT1
Collector Current − Continuous
2
EMITTER
Vdc
60
75
MMBT2222LT1
MMBT2222ALT1
Emitter −Base Voltage
1
BASE
Vdc
3
5.0
6.0
IC
600
mAdc
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
1
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate (Note 2) TA = 25°C
Derate above 25°C
SOT−23
CASE 318
STYLE 6
PD
RqJA
PD
MARKING DIAGRAM
Thermal Resistance, Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
xxx M G
G
1
xxx = 1P or M1B
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 6
1
Publication Order Number:
MMBT2222LT1/D
MMBT2222LT1, MMBT2222ALT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
MMBT2222A
MMBT2222
V(BR)CEO
30
40
−
−
Vdc
Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
MMBT2222A
MMBT2222
V(BR)CBO
60
75
−
−
Vdc
Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
MMBT2222A
MMBT2222
V(BR)EBO
5.0
6.0
−
−
Vdc
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
MMBT2222A
ICEX
−
10
nAdc
Collector Cutoff Current (VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 125°C)
(VCB = 60 Vdc, IE = 0, TA = 125°C)
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
ICBO
−
−
−
−
0.01
0.01
10
10
mAdc
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)
MMBT2222A
IEBO
−
100
nAdc
Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
MMBT2222A
IBL
−
20
nAdc
35
50
75
35
100
50
30
40
−
−
−
−
300
−
−
−
MMBT2222
MMBT2222A
−
−
0.4
0.3
MMBT2222
MMBT2222A
−
−
1.6
1.0
MMBT2222
MMBT2222A
−
0.6
1.3
1.2
MMBT2222
MMBT2222A
−
−
2.6
2.0
250
300
−
−
−
8.0
−
−
30
25
2.0
0.25
8.0
1.25
−
−
8.0
4.0
50
75
300
375
5.0
25
35
200
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C)
(IC = 150 mAdc, VCE = 10 Vdc) (Note 3)
(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 3)
(IC = 500 mAdc, VCE = 10 Vdc) (Note 3)
hFE
MMBT2222A only
MMBT2222
MMBT2222A
Collector −Emitter Saturation Voltage (Note 3)
(IC = 150 mAdc, IB = 15 mAdc)
−
VCE(sat)
(IC = 500 mAdc, IB = 50 mAdc)
Base −Emitter Saturation Voltage (Note 3)
(IC = 150 mAdc, IB = 15 mAdc)
Vdc
VBE(sat)
(IC = 500 mAdc, IB = 50 mAdc)
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 4)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
MMBT2222
MMBT2222A
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
MHz
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
pF
Cibo
MMBT2222
MMBT2222A
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A
Small −Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A
pF
hie
kW
X 10− 4
hre
hfe
−
mmhos
hoe
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2
MMBT2222LT1, MMBT2222ALT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
−
150
−
4.0
Unit
SMALL− SIGNAL CHARACTERISTICS
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
MMBT2222A
rb, Cc
Noise Figure
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz)
MMBT2222A
ps
NF
dB
SWITCHING CHARACTERISTICS (MMBT2222A only)
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 30 Vdc, VBE(off) = − 0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td
−
10
tr
−
25
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts
−
225
tf
−
60
ns
ns
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
+30 V
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
+16 V
200
+16 V
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
0
0
−2 V
1 kW
< 2 ns
−14 V
CS* < 10 pF
200
1k
< 20 ns
CS* < 10 pF
1N914
−4 V
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
hFE , DC CURRENT GAIN
1000
700
500
TJ = 125°C
300
200
25°C
100
70
50
−55°C
30
VCE = 1.0 V
VCE = 10 V
20
10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
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3
50
70
100
200
300
500 700 1.0 k
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
MMBT2222LT1, MMBT2222ALT1
1.0
TJ = 25°C
0.8
0.6
IC = 1.0 mA
10 mA
150 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
IB, BASE CURRENT (mA)
2.0
3.0
5.0
10
20
30
50
Figure 4. Collector Saturation Region
200
500
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
30
20
10
7.0
5.0
200
t′s = ts − 1/8 tf
100
70
50
tf
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0
10
200 300
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
500
5.0 7.0 10
Figure 5. Turn −On Time
300
500
10
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
IC = 1.0 mA, RS = 150 W
500 mA, RS = 200 W
100 mA, RS = 2.0 kW
50 mA, RS = 4.0 kW
f = 1.0 kHz
8.0
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
6.0
20 30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
Figure 6. Turn −Off Time
10
8.0
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
300
t, TIME (ns)
t, TIME (ns)
100
70
50
4.0
2.0
IC = 50 mA
100 mA
500 mA
1.0 mA
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
0
50
50 100
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
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4
50 k 100 k
30
CAPACITANCE (pF)
20
Ceb
10
7.0
5.0
Ccb
3.0
2.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
20 30
50
f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
MMBT2222LT1, MMBT2222ALT1
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
Figure 9. Capacitances
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
2.0
50
70 100
Figure 10. Current−Gain Bandwidth Product
1.0
+0.5
TJ = 25°C
0
VBE(sat) @ IC/IB = 10
COEFFICIENT (mV/° C)
V, VOLTAGE (VOLTS)
0.8
1.0 V
0.6
VBE(on) @ VCE = 10 V
0.4
0.2
RqVC for VCE(sat)
−0.5
−1.0
−1.5
RqVB for VBE
−2.0
VCE(sat) @ IC/IB = 10
0
0.1 0.2
50 100 200
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
−2.5
500 1.0 k
0.1 0.2
Figure 11. “On” Voltages
0.5
1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
500
Figure 12. Temperature Coefficients
ORDERING INFORMATION
Specific Marking Code
Package
Shipping †
MMBT2222LT1
M1B
SOT−23
3000 / Tape & Reel
MMBT2222LT1G
M1B
SOT−23
(Pb−Free)
3000 / Tape & Reel
MMBT2222ALT1
1P
SOT−23
3000 / Tape & Reel
MMBT2222ALT1G
1P
SOT−23
(Pb−Free)
3000 / Tape & Reel
MMBT2222LT3
M1B
SOT−23
10,000 / Tape & Reel
MMBT2222LT3G
M1B
SOT−23
(Pb−Free)
10,000 / Tape & Reel
MMBT2222ALT3
1P
SOT−23
10,000 / Tape & Reel
MMBT2222ALT3G
1P
SOT−23
(Pb−Free)
10,000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MMBT2222LT1, MMBT2222ALT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
e
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBT2222LT1/D
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