AP9435GG
Pb Free Plating Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Fast Switching Characteristic
▼ Single Drive Requirement
G
▼ RoHS Compliant
BVDSS
-30V
RDS(ON)
50mΩ
ID
- 4.2A
S
Description
D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
S
SOT-89
D
G
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
- 30
V
±20
V
3
- 4.2
A
3
-3.4
A
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
1
IDM
Pulsed Drain Current
-20
A
PD@TA=25℃
Total Power Dissipation
1.25
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
100
℃/W
201021051-1/4
AP9435GG
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-30
-
-
V
-
-0.1
-
V/℃
VGS=-10V, ID=-4A
-
-
50
mΩ
VGS=-4.5V, ID=-2A
-
-
90
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VDS=-10V, ID=-4A
-
6
-
S
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=± 20V
-
-
±100
nA
ID=-4A
-
10
16
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance
Gate Threshold Voltage
2
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current (Tj=25oC)
o
IGSS
2
VGS=0V, ID=-250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-25V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
6
-
nC
VDS=-15V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
26
-
ns
tf
Fall Time
RD=15Ω
-
14
-
ns
Ciss
Input Capacitance
VGS=0V
-
520
830
pF
Coss
Output Capacitance
VDS=-25V
-
180
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Rg
Gate Resistance
f=1.0MHz
-
16
24
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-1A, VGS=0V
-
-
-1.3
V
trr
Reverse Recovery Time
IS=-4A, VGS=0V,
-
30
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
24
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Surface mount on FR4 board, t < 10s.
2/4
AP9435GG
20
20
o
-10V
-7.0V
-5.0V
-4.5V
-ID , Drain Current (A)
15
15
10
5
V G =-3.0V
10
V G =-3.0V
5
0
0
0
2
4
0
6
2
4
6
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
160
1.8
I D =-2A
T A =25 ℃
Normalized RDS(ON)
I D = -4 A
V G =-10V
RDS(ON) (mΩ )
120
80
1.4
1.0
0.6
40
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
Normalized -VGS(th) (V)
4
3
-IS(A)
-10V
-7.0V
-5.0V
-4.5V
o
T A =150 C
-ID , Drain Current (A)
T A =25 C
o
T j =150 C
T j =25 o C
2
1.5
1.0
0.5
1
0.0
0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP9435GG
f=1.0MHz
1000
9
I D =- 4 A
V DS =-2 5 V
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
C oss
3
C rss
100
0
0
5
10
15
20
1
25
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthjc)
1
10
100us
-ID(A)
9
-V DS , Drain-to-Source Voltage (V)
1ms
1
10ms
o
T A =25 C
Single Pulse
0.1
100ms
1s
10s
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthjc + Ta
0.01
Rthja=100 oC/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
VG
-ID , Drain Current (A)
V DS =-5V
QG
15
T j =25 o C
T j =150 o C
-4.5V
QGS
10
QGD
5
Charge
Q
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4