Sirectifier HUR3020CTS High-performance wide temperature range ultra fast recovery epitaxial diode Datasheet

HUR3020CTS
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Dimensions TO-263(D2PAK)
C(TAB)
A
C
A
NC
A=Anode, NC= No connection, TAB=Cathode
HUR3020CTS
VRSM
V
200
Symbol
VRRM
V
200
Test Conditions
IFRMS
IFAVM
TC=135oC; rectangular, d=0.5
IFSM
TVJ=45oC; tp=10ms (50Hz), sine
EAS
IAR
o
TVJ=25 C; non-repetitive; IAS=2.5A; L=180uH
VA=1.5.VR typ.; f=10kHz; repetitive
Gate
Collector
Emitter
Collector
Botton Side
Millimeter
Min.
Max.
Inches
Min. Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
8.00
9.65
8.89
.340
.315
.380
.350
E
E1
e
9.65
10.29
6.22
8.13
2.54 BSC
Ptot
TC=25oC
Md
mounting torque
typical
.380
.405
.245
.320
.100 BSC
L
L1
L2
L3
L4
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.20
.575
.090
.040
.050
0
.625
.110
.055
.070
.008
R
0.46
0.74
.018
.029
Maximum Ratings
Unit
35
2 x 15
A
140
A
0.8
mJ
0.3
A
-55...+175
175
-55...+150
TVJ
TVJM
Tstg
Weight
1.
2.
3.
4.
Dim.
o
C
95
W
0.4...0.6
Nm
2
g
HUR3020CTS
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Symbol
Test Conditions
Characteristic Values
typ.
max.
Unit
IR
TVJ=25oC; VR=VRRM
TVJ=150oC; VR=VRRM
100
0.5
uA
mA
VF
IF=15A; TVJ=150oC
TVJ=25oC
1.21
1.68
V
RthJC
RthCH
trr
IRM
1.6
0.5
IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC
30
o
VR=100V; IF=25A; -diF/dt=100A/us; TVJ=100 C
K/W
ns
2.7
A
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
* Avalanche voltage rated for reliable
operation
* Soft reverse recovery for low
EMI/RFI
* Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
HUR3020CTS
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
40
20
500
TVJ = 100°C
nC
A
VR = 150V
400
30
IF
TVJ = 100°C
A
VR = 150V
IF = 30A
15
IF = 15A
IF = 30A
300
TVJ = 100°C
20
IRM
Qr
TVJ = 150°C
IF = 7.5A
IF = 15A
TVJ = 25°C
10
IF = 7.5A
200
10
5
100
0
0
V
1
0
100
2
0
A/us 1000
-diF/dt
VF
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
1.4
80
trr
1.2
0.85
TVJ = 100°C
IF = 15A
12
VFR
IF = 30A
us
0.80
tfr
tfr
VFR
10
IF = 15A
1.0
600 A/us
800 1000
-diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
VR = 150V
60
400
V
70
Kf
200
14
TVJ = 100°C
ns
0
0.75
IF = 7.5A
IRM
50
8
0.70
40
6
0.65
Qr
0.8
0.6
30
0
40
80
120 °C 160
4
0
TVJ
200
400
600
800 1000
A/us
200
400
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
10
0.60
600 A/us
800 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
K/W
i
1
1
2
3
ZthJC
0.1
0.01
0.001
0.00001
0
0.0001
0.001
0.01
s
0.1
t
Fig. 7 Transient thermal resistance junction to case
1
Rthi (K/W)
ti (s)
0.908
0.35
0.342
0.005
0.0003
0.017
Similar pages