BVDSS = 80 V RDS(on) typ = 3 mΩ HRA40N08K ID = 180 A 80V N-Channel Trench MOSFET TO-247 FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 190nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 3 mΩ (Typ.) @VGS=10V 1 2 3 1.Gate 2. Drain 3. Source 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS TC=25℃ unless otherwise specified Parameter Drain-Source Voltage Value Units 80 V Drain Current – Continuous (TC = 25℃) 180 A Drain Current – Continuous (TC = 100℃) 126 A IDM Drain Current – Pulsed 630 A VGS Gate-Source Voltage ±25 V EAS Single Pulsed Avalanche Energy (Note 2) 1400 mJ EAR Repetitive Avalanche Energy (Note 1) 25 mJ PD Power Dissipation (TC = 25℃) - Derate above 25℃ 250 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds ID (Note 1) 1.67 W/℃ -55 to +175 ℃ 300 ℃ Thermal Resistance Characteristics Typ. Max. RθJC Symbol Junction-to-Case Parameter -- 0.6 RθJA Junction-to-Ambient -- 40 Units ℃/W ◎ SEMIHOW REV.A0,December 2014 HRA40N08K December 2014 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) gFS Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.0 -- 3.6 V Static Drain-Source On-Resistance VGS = 10 V, ID = 40 A -- 3.0 4.0 mΩ Forward Transconductance VDS = 20, ID = 40 A -- 100 -- S VGS = 0 V, ID = 250 ㎂ 80 -- -- V VDS = 64 V, VGS = 0 V -- -- 1 ㎂ VDS = 64 V, TJ = 125℃ -- -- 100 ㎂ VGS = ±25 V, VDS = 0 V -- -- ±100 ㎁ -- 8100 -- ㎊ -- 1100 -- ㎊ -- 720 -- ㎊ -- 2.3 -- Ω -- 90 -- ㎱ -- 130 -- ㎱ -- 260 -- ㎱ -- 100 -- ㎱ -- 190 -- nC -- 30 -- nC -- 75 -- nC Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 25 V, VGS = 0 V, f = 1.0 MHz VGS = 0 V, VDS = 0 V, f = 1MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 40 V, ID = 30 A, RG = 6 Ω VDS = 64 V, ID = 30 A, VGS = 10 V Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 180 ISM Pulsed Source-Drain Diode Forward Current -- -- 630 VSD Source-Drain Diode Forward Voltage IS = 30 A, VGS = 0 V -- -- 1.3 V trr Reverse Recovery Time -- 80 -- ㎱ Qrr Reverse Recovery Charge IS = 30 A, VGS = 0 V diF/dt = 100 A/μs -- 120 -- nC A Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, IAS=35A, VDD=45V, RG=25Ω, Starting TJ =25°C ◎ SEMIHOW REV.A0,December 2014 HRA40N08K Electrical Characteristics TJ=25 °C HRA40N08K Typical Characteristics VGS 15 V 10 V 8V 7V 6V 5.5 V 5V Bottom : 4.5 V 102 ID, Drain Current [A] ID, Drain Current [A] Top : 100 10 175oC 25oC 1 * Notes : 1. VDS= 20V 2. 300us Pulse Test * Notes : 1. 300us Pulse Test 2. TC = 25oC 101 100 0.1 0 101 2 Figure 1. On Region Characteristics 6 8 VGS = 10V 3.2 3.0 100 10 175oC 25oC 1 * Notes : 1. VGS= 0V 2. 300us Pulse Test ∗ Note : TJ = 25oC 2.8 0 100 200 300 0.1 0.0 400 0.4 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 8000 6000 Coss * Note ; 1. VGS = 0 V 2. f = 1 MHz 4000 Crss 2000 0 10-1 1.6 2.0 100 101 12 VGS, Gate-Source Voltage [V] Ciss 10000 1.2 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 12000 0.8 VSD, Source-Drain Voltage [V] ID, Drain Current [A] Capacitances [pF] 10 Figure 2. Transfer Characteristics IDR, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 3.4 4 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] 10 8 6 4 2 0 VDS = 64V ID = 30V 0 40 80 120 160 200 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,December 2014 (continued) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance 1.2 BVDSS, (Normalized) Drain-Source Breakdown Voltage HRA40N08K Typical Characteristics 1.1 1.0 0.9 ∗ Note : 1. VGS = 0 V 2. ID = 250µA 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 0.5 ∗ Note : 1. VGS = 10 V 2. ID = 40 A 0.0 -100 200 -50 100 µs ID, Drain Current [A] 102 DC 1 10 100 * Notes : 1. TC = 25 oC 200 120 90 60 30 2. TJ = 175 oC 3. Single Pulse 100 101 0 25 102 50 75 100 125 150 175 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 100 ZθJC(t), Thermal Response ID, Drain Current [A] 150 150 1 ms 10 ms 10-2 10-1 100 180 Operation in This Area is Limited by R DS(on) 10-1 50 Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 103 0 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] D=0.5 10-1 * Notes : 1. ZθJC(t) = 0.6 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.2 0.1 0.05 PDM 0.02 0.01 t1 single pulse 10-2 10-5 10-4 10-3 10-2 10-1 t2 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,December 2014 HRA40N08K Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,December 2014 HRA40N08K Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,December 2014 HRA40N08K Package Dimension TO-247 ◎ SEMIHOW REV.A0,December 2014