Renesas HAT2201WP Silicon n channel power mos fet power switching Datasheet

Preliminary Datasheet
HAT2201WP
Silicon N Channel Power MOS FET
Power Switching
REJ03G1679-0310
Rev.3.10
May 21, 2010
Features




Capable of 8 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 34 m typ. (at VGS = 10 V)
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 6 7 8
D D D D
5 6 7 8
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
4
G
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID(pulse) Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
100
±20
15
60
15
15
22.5
15
8.33
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tch = 25°C, Rg  50 
3. Tc = 25°C
REJ03G1679-0310 Rev.3.10
May 21, 2010
Page 1 of 7
HAT2201WP
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
100
—
—
3.5
—
—
12
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
34
35
20
1450
180
65
0.9
21
7.6
5.2
18
3
33
Max
—
±0.1
1
5.0
43
49
—
—
—
—
—
—
—
—
—
—
—
Unit
V
A
A
V
m
m
S
pF
pF
pF

nc
nc
nc
ns
ns
ns
—
—
—
4.1
0.84
45
—
1.10
—
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 100 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 7.5 A, VGS = 10 V Note4
ID = 7.5 A, VGS = 8 V Note4
ID = 7.5 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 50 V
VGS = 10 V
ID = 15 A
VGS = 10 V, ID = 7.5 A
VDD  30 V
RL = 4 
Rg = 4.7 
IF = 15 A, VGS = 0 Note4
IF = 15 A, VGS = 0
diF/ dt = 100 A/ s
Notes: 4. Pulse test
REJ03G1679-0310 Rev.3.10
May 21, 2010
Page 2 of 7
HAT2201WP
Preliminary
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
100
10 μs
Drain Current ID (A)
Channel Dissipation Pch (W)
40
30
20
10
0
50
100
150
100 μs
1
Operation in
this area is
0.1 limited by RDS(on)
200
1 ms
PW =
10 ms
DC Operation
Tc = 25°C
0.01
Ta = 25°C
0.001 1 shot Pulse
0.1 0.3 1
3
10 30
100 300 1000
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
20
20
10 V
7V
6.2 V
16
12
5.8 V
8
VGS = 5.5 V
4
Drain Current ID (A)
Drain Current ID (A)
10
VDS = 10 V
Pulse Test
16
12
Tc = 75°C
8
25°C
4
–25°C
Pulse Test
2
4
6
8
0
10
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source On State Resistance
vs. Drain Current
500
Pulse Test
400
300
200
ID = 5 A
100
0
2A
4
8
12
16
1A
20
Gate to Source Voltage VGS (V)
REJ03G1679-0310 Rev.3.10
May 21, 2010
Static Drain to Source On State Resistance
RDS(on) (mΩ)
Drain to Source Voltage VDS(on) (mV)
0
100
Pulse Test
50
VGS = 8 V
10 V
20
10
1
10
100
Drain Current ID (A)
Page 3 of 7
Preliminary
Static Drain to Source On State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source On State Resistance
RDS(on) (mΩ)
HAT2201WP
100
Pulse Test
80
1 A, 2 A, 5 A
60
VGS = 8 V
40
ID = 1 A, 2 A, 5 A
10 V
20
0
-25
0
25
50
75
100 125 150
25°C
1
75°C
0.1
0.1
VDS = 10 V
Pulse Test
0.3
1
3
10
30
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
100
10000
Capacitance C (pF)
20
10
0.1
1
10
3000
Ciss
1000
300
Coss
100
Crss
30
di/dt = 100 A/μs
VGS = 0, Ta = 25°C
VGS = 0
f = 1 MHz
10
100
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
20
ID = 15 A
200
VGS 16
VDS = 100 V
50 V
25 V
150
12
VDS
8
50
4
VDS = 100 V
50 V
25 V
8
16
24
32
Gate Charge Qg (nc)
REJ03G1679-0310 Rev.3.10
May 21, 2010
0
40
1000
VGS = 10 V, VDS = 30 V
Rg = 4.7 Ω, duty ≤ 1 %
Switching Time t (ns)
250
Gate to Source Voltage VGS (V)
Reverse Recovery Time trr (ns)
Drain to Source Voltage VDS (V)
10
Drain Current ID (A)
50
0
Tc = –25°C
Case Temperature Tc (°C)
100
100
100
100
td(off)
td(on)
10
tf
tr
1
0.1
1
10
100
Drain Current ID (A)
Page 4 of 7
HAT2201WP
Preliminary
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IF (A)
20
10 V
VGS = 0 V, –5 V
16
12
8
4
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
50
IAP = 15 A
VDD = 50 V
duty < 0.1 %
Rg ≥ 50 Ω
40
30
20
10
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
Source to Drain Voltage VSDF (V)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch - c(t) = γs (t) • θch - c
θch - c = 8.33°C/ W, Tc = 25°C
0.1
0.05
0.03
PDM
0.02
uls
1
0.0
0.01
10 μ
e
PW
T
PW
T
p
ot
sh
1
100 μ
D=
1m
10 m
100 m
1
10
Pulse Width PW (s)
REJ03G1679-0310 Rev.3.10
May 21, 2010
Page 5 of 7
HAT2201WP
Preliminary
Avalanche Test Circuit
Avalanche Waveform
EAR =
L
VDS
Monitor
1
2
L • IAP2 •
VDSS
VDSS - VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
D. U. T
VDS
VDD
ID
Vin
15 V
50 Ω
0
VDD
Switching Time Test Circuit
Vout
Monitor
Vin Monitor
Rg
Switching Time Waveform
90%
D.U.T.
RL
Vin
Vout
Vin
10 V
10%
10%
VDS
= 30 V
90%
td(on)
REJ03G1679-0310 Rev.3.10
May 21, 2010
10%
tr
90%
td(off)
tf
Page 6 of 7
HAT2201WP
Preliminary
Package Dimensions
JEITA Package Code
⎯
RENESAS Code
PWSN0008DA-A
Previous Code
WPAKV
MASS[Typ.]
0.075g
0.8Max
5.1 ± 0.2
Unit: mm
0.5 ± 0.15
Package Name
WPAK
4.21Typ
1.27Typ
+0.1
-0.2
5.9
3.8 ± 0.2
+0.1
-0.3
6.1
3.9 ± 0.2
0.05Max
0Min
Stand-off
1.27Typ
0.2Typ
0.5 ± 0.15
0.545Typ
0.7Typ
0.04Min
0.4 ± 0.06
4.9 ± 0.1
(Ni/Pd/Au plating)
Notice:The reverse pattern of die-pad
support lead described above exists.
Ordering Information
Part No.
HAT2201WP-EL-E
REJ03G1679-0310 Rev.3.10
May 21, 2010
Quantity
2500 pcs
Shipping Container
Taping
Page 7 of 7
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