TSC HER408 4a, 1000v high efficient rectifier Datasheet

HER408
Taiwan Semiconductor
CREAT BY ART
4A, 1000V High Efficient Rectifier
FEATURES
- Negligible leakage sustain the high operation temperature
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-201AD
DO-201AD
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight: 1.1 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
HER408
UNIT
Maximum repetitive peak reverse voltage
VRRM
1000
V
Maximum RMS voltage
VRMS
700
V
Maximum DC blocking voltage
VDC
1000
V
Maximum average forward rectified current
IF(AV)
4
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
200
A
VF
1.7
V
Maximum instantaneous forward voltage (Note 1)
@4A
Maximum reverse current @ rated VR
TJ=25 °C
TJ=125 °C
Maximum reverse recovery time (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
IR
10
250
μA
trr
75
ns
RθJA
30
°C/W
TJ
- 55 to +150
°C
TSTG
- 55 to +150
°C
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Document Number: DS_D1412014
Version: A14
HER408
Taiwan Semiconductor
CREAT BY ART
ORDER INFORMATION (EXAMPLE)
HER408 A0G
Green compound code
Packing code
Part no.
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
4
3
2
RESISTIVE OR
INDUCTIVE LOAD
0
0
25
50
75
100
125
150
INSTANTANEOUS REVERSE CURRENT
(μA)
AVERAGE FORWARD CURRENT (A)
5
1
FIG. 2- TYPICAL REVERSE CHARACTERISTICS
1000
100
TJ=125°C
10
1
0.1
TJ=25°C
0.01
0
LEAD TEMPERATURE (oC)
20
40
60
80
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
100
FIG. 4- TYPICAL FORWARD CHARACTERISTICS
250
8.3ms Single Half Sine Wave
200
150
100
50
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
100
INSTANTANEOUS FORWARD CURRENT (A)
PEAK FORWARD SURGE
CURRENT(A)
FIG. 3- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
10
TJ=125°C
1
TJ=25°C
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
FORWARD VOLTAGE (V)
Document Number: DS_D1412014
Version: A14
HER408
Taiwan Semiconductor
CREAT BY ART
FIG. 5- TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE (pF)
175
150
f=1.0MHz
Vsig=50mVp-p
125
100
75
50
25
0
0.1
1
10
100
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
DO-201AD
DIM.
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
5.00
5.60
0.197
0.220
B
1.20
1.30
0.048
0.052
C
25.40
-
1.000
-
D
8.50
9.50
0.335
0.375
E
25.40
-
1.000
-
MARKING DIAGRAM
P/N =
Specific Device Code
G=
Green Compound
YWW = Date Code
F=
Document Number: DS_D1412014
Factory Code
Version: A14
HER408
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1412014
Version: A14
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