HER408 Taiwan Semiconductor CREAT BY ART 4A, 1000V High Efficient Rectifier FEATURES - Negligible leakage sustain the high operation temperature - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-201AD DO-201AD Molding compound, UL flammability classification rating 94V-0 Packing code with suffix "G" means green compound (halogen-free) Terminal: Pure tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Weight: 1.1 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL HER408 UNIT Maximum repetitive peak reverse voltage VRRM 1000 V Maximum RMS voltage VRMS 700 V Maximum DC blocking voltage VDC 1000 V Maximum average forward rectified current IF(AV) 4 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 200 A VF 1.7 V Maximum instantaneous forward voltage (Note 1) @4A Maximum reverse current @ rated VR TJ=25 °C TJ=125 °C Maximum reverse recovery time (Note 2) Typical thermal resistance Operating junction temperature range Storage temperature range IR 10 250 μA trr 75 ns RθJA 30 °C/W TJ - 55 to +150 °C TSTG - 55 to +150 °C Note 1: Pulse Test with PW=300μs, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Document Number: DS_D1412014 Version: A14 HER408 Taiwan Semiconductor CREAT BY ART ORDER INFORMATION (EXAMPLE) HER408 A0G Green compound code Packing code Part no. RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 4 3 2 RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 INSTANTANEOUS REVERSE CURRENT (μA) AVERAGE FORWARD CURRENT (A) 5 1 FIG. 2- TYPICAL REVERSE CHARACTERISTICS 1000 100 TJ=125°C 10 1 0.1 TJ=25°C 0.01 0 LEAD TEMPERATURE (oC) 20 40 60 80 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 100 FIG. 4- TYPICAL FORWARD CHARACTERISTICS 250 8.3ms Single Half Sine Wave 200 150 100 50 0 1 10 NUMBER OF CYCLES AT 60 Hz 100 100 INSTANTANEOUS FORWARD CURRENT (A) PEAK FORWARD SURGE CURRENT(A) FIG. 3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 10 TJ=125°C 1 TJ=25°C 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 FORWARD VOLTAGE (V) Document Number: DS_D1412014 Version: A14 HER408 Taiwan Semiconductor CREAT BY ART FIG. 5- TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE (pF) 175 150 f=1.0MHz Vsig=50mVp-p 125 100 75 50 25 0 0.1 1 10 100 REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS DO-201AD DIM. Unit (mm) Unit (inch) Min Max Min Max A 5.00 5.60 0.197 0.220 B 1.20 1.30 0.048 0.052 C 25.40 - 1.000 - D 8.50 9.50 0.335 0.375 E 25.40 - 1.000 - MARKING DIAGRAM P/N = Specific Device Code G= Green Compound YWW = Date Code F= Document Number: DS_D1412014 Factory Code Version: A14 HER408 Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1412014 Version: A14