RoHS MMBT8050LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 D T ,. L O 3 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS 1 B PUSH-PULL OPERATION 2 1. 0.95 0.95 2.9 1.9 2.4 1.3 Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage V CBO V CEO R T V EBO Emitter-Base Voltage Ic Collector Current o PD Collector Dissipation Ta=25 C* C E L Junction Temperature Storage Temperature Electrical Characteristics Characteristic IC N ABSOLUTE MAXIMUM RATINGS O Symbol o Unit 40 V 25 V 6 V 500 mA 225 mW 150 O -55-150 O o Test Conditions Collector-Base Breakdown Voltage BV CBO 40 V I C =100uA I E =0 Collector-Emitter Breakdown Voltage# BV CEO 25 V I C =1mA I B =0 Emitter-Base Breakdown Voltage BV EBO 6 V I E =100uA I C =0 100 nA V CB =35V, I E =0 100 nA V EB =6V, I C =0 J E E I CBO Emitter Cutoff Current I EBO DC Current Gain h FE1 45 DC Current Gain h FE2 85 DC Current Gain h FE3 30 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage W C C (Ta=25 C) MIN. TYP. MAX. Unit Collector Cutoff Current Unit:mm (Ta=25 C) Rating Tj T stg C 1.BASE 2.EMITTER 3.COLLECTOR 0.4 Complement to MMPT8550LT1 Collector Current:Ic=500mA o Collector Dissipation:Pc=225mW (Tc=25 C) V CE =1V, I C =5mA 160 300 V CE(sat) 0.28 0.5 V I C =500mA, I B =50mA V BE(sat) 0.98 1.2 V I C =500mA, I B =50mA 1 V I CE =1V, I C =10mA PF V CB =10V, I E =0,f=1MHz V CE =1V, I C =500mA Base-Emitter Voltage V BE 0.66 Output Capacitance C ob 9 Current Gain-Bandwidth Product fT 100 V CE =1V, I C =50mA 190 MHz V CE =10V, I C =50mA o *Total Device Dissipation:FR=1X0.75X0.062 in Board ,Derate 25 C # Pulse Test: Pulse Width 300uS ,Duty cycle 2% MMBT8050LT1=A6 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS MMBT8050LT1 V CEBAT -COLLECTORMEMITTER VOLTAGE(V) 300 Vc E =1V 。 125 C 250 200 。 25 C 150 100 。 -40 C 50 1 10 100 1000 I C -COLLECTOR CURRENT(mA) C E L Base-Emitter Saturation Voltage vs Collector Current 1.2 =10 1 0.8 。 -40 C J E 0.6 0.4 10 R T E 。 25 C 。 125 C 100 1000 I C -COLLECTOR CURRENT(mA) D T ,. L O Collector-Emitter Saturation Voltage vs Collector Current 0.4 =10 0.3 0.2 IC 0.1 C N 0 10 。 125 C 。 25 C 。 -40 C 100 1000 I C -COLLECTOR CURRENT(mA) O FT(MHz),GAIN BANDWIDTH PRODUCT(MHz) Typical Pulsed Current Gain vs Collector Current V CEBAT -BASE EMITTER VOLTAGE(V) h FE -TYPICAL PU;SECD CURRENT GAIN Typical Characteristics Gain Bandnith Product vs Collector Current 1000 Vc E =10V 800 600 400 200 0 1 10 20 50 100 I C -COLLECTOR CURRENT(mA) W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]