Winsemi MCR100-8-T Silicon controlled rectifier Datasheet

MCR100-8
Sensitive Gate
Silicon Controlled Rectifiers
Features
■ Sensitive gate trigger current: IGT=200uA maximum
■ Low on-state voltage: VTM=1.2(typ.)@ ITM
■ Low reverse and forward blocking current:
IDRM/IPRM=100uA@TC=125℃
■ Low holding current: IH=5mA maximum
General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as microcontrollers, logic integrated
circuits, small motor control, gate driver for large SCR, sensing
and detecting circuits.
General purpose switching and phase control applications
Absolute Maximum Ratings (Tj=25℃ unless otherwise specified)
Symbol
Parameter
VDRM/VRRM
Value
Units
600
V
TI=85℃
0.8
A
TI=85℃
0.5
A
Repetitive peak off-state voltage
Note(1)
o
IT(RMS)
RMS on-state current (180 conduction angles)
o
IT(AV)
Average on-state current (80 conduction angles )
ITSM
Non repetitive surge peak on-state current
tp = 8.3 ms
9
tp = 10 ms
8
tp = 8.3 ms
0.41
A2s
0.1
W
A
I2t
I²t Value for fusing
PGM
Peak gate power
dI/dt
Critical rate of rise of on-state current
ITM = 2A; IG = 10mA; dIG/dt = 100mA/µs
TJ=125℃
50
A/μs
PG(AV)
Average gate power dissipation
TA=25℃
0.01
W
IFGM
Peak gate current
TA=25℃
1
A
VRGM
Peak gate voltage
TA=25℃
5
V
TJ,
Junction temperature
-40~125
℃
Tstg
Storage temperature
-40~150
℃
Note1: Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may
switch to the on-state.The rate of rise of current should not exceed 15 A/µs.
Thermal Characteristics
Symbol
Parameter
Min
Value
Typ
Max
Units
RQJC
Thermal resistance, Junction-to-Case
-
-
75
℃/W
RQJA
Thermal resistance, Junction-to-Ambient
-
-
200
℃/W
Ordering Information
Order codes
Package
Marking
Halogen Free
Packaging
MCR100-8
TO126
100-8
NO
Tube
MCR100-8-T
TO126
100-8
NO
Reel
Rev. B2
Jun.2009
Copyright @ WinSemi Microeletronics Co., Ltd., All rights reserved.
T21-2
MCR100-8
Electrical Characteristics (TJ = 25°C, RGK = 1 kΩ unless otherwise specified)
Characteristics
Symbol
IDRM/IRRM
(VAK= VDRM/VRRM)
Forward “On” voltage
VTM
Tc=25℃
off-state leakage current
VGD
Max
-
-
1
Unit
μA
100
(ITM = 1A tp = 380μs)
(Note2.1)
(VAK = 7 Vdc, RL = 100 Ω)
1.2
1.7
V
15
-
200
μA
-
-
0.8
V
0.2
-
-
V
500
800
-
(Note2.2)
(VAK = 7 Vdc, RL = 100 Ω)
Gate threshold Voltage
(Note2.1)
Voltage Rate of Rise Off-State Voltage
(Note2.2)
Gate Trigger Voltage (Continuous dc)
VGT
Typ.
Tc=125℃
Gate trigger current (continuous dc)
IGT
Min
TJ=125℃
dv/dt
V/μs
(VD=0.67VDRM ;exponential waveform)
Gate open circuit
25
IH
Holding Current (VD = 12 V; IGT = 0.5 mA)
-
2
5
mA
IL
latching current (VD = 12 V; IGT = 0.5 mA)
-
2
6
mA
Rd
Dynamic resistance
-
-
245
mΩ
TJ=125℃
Note 2.1 Pulse width≤1.0ms,duty cycle≤1%
2.2 RGK current is not included in measurement.
2/6
Steady, keep you advance
MCR100-8
3/6
Steady, keep you advance
MCR100-8
4/6
Steady, keep you advance
MCR100-8
TO-92 Package Dimension
Unit: mm
5/6
Steady, keep you advance
MCR100-8
TO-92 Tape Reel Size
SYMBO
min.
nom
max.
SYMBOL
min.
F1/F2
2.25
2.4
2.55
I1
2.5
P
11.7
12.7
13.7
L1
P0
12.4
12.7
13.0
W
17.5
18.0
19.0
P2
5.95
6.35
6.75
W0
5.7
6.0
6.3
H
19.35
20.45
W1
8.5
9.0
9.75
H0
12.5
13.5
W2
25.5
∆h
-1.0
0.0
1.0
6.5
∆P
-1.0
0.0
1.0
T1
0.35
13.0
H1
H2
6
H3
9.5
α
130°
135°
140°
T2
nom
max.
3.0
11
0.5
0.65
1.44
6/6
Steady, keep you advance
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