BCD AP2115R5A-3.3TRG1 1a low noise cmos ldo regulator with enable Datasheet

Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
General Description
Features
The AP2115 is CMOS process low dropout linear
regulator with enable function, the regulator delivers
a guaranteed 1A (min.) continuous load current.
•
•
•
•
The AP2115 features low power consumption.
•
The AP2115 is available in 1.2V, 1.8V, 2.5V and
3.3V regulator output, and available in excellent
output accuracy ±1.5%, it is also available in an
excellent load regulation and line regulation
performance.
•
•
•
The AP2115 is available in standard packages of
SOIC-8 and SOT-89-5.
•
•
•
•
•
AP2115
Output Voltage Accuracy: ±1.5%
Output Current: 1A (Min.)
Fold-back Short Current Protection: 50mA
Low Dropout Voltage (3.3V): 450mV (Typ.)
@ IOUT=1A
Stable with 4.7µF Flexible Cap: Ceramic,
Tantalum and Aluminum Electrolytic
Excellent Line Regulation: 0.02%/V (Typ.),
0.1%/V (Max.) @ IOUT=30mA
Excellent Load Regulation: 0.2%/A @
IOUT=1mA to 1A
Low Quiescent Current: 60µA (1.2V/1.8V/
2.5V)
Low Output Noise: 30µVRMS
PSRR: 68dB @ Freq=1kHz (1.2V/1.8V)
OTSD Protection
Operation Temperature Range: -40°C to 85°C
ESD: MM 400V, HBM 4000V
Applications
•
•
•
SOIC-8
LCD Monitor
LCD TV
STB
SOT-89-5
Figure 1. Package Types of AP2115
Jul. 2011
Rev 1. 1
BCD Semiconductor Manufacturing Limited
1
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2115
Pin Configuration
R5 Package
（SOT-89-5）
R5
R5A
VOUT
VIN
5
4
1
2
3
NC
GND
EN
M Package
（SOIC-8）
Figure 2. Pin Configuration of AP2115 (Top View)
Pin Descriptions
Pin No.
Name
SOT-89-5
SOIC-8
1
2, 3, 4
NC/EN
2
6, 7
GND
3
5
EN/NC
4
8
VIN
5
1
VOUT
Jul. 2011
Function
No connection/Chip Enable
GND
Chip Enable, H – normal work, L – shutdown output/ No
Connection
Input Voltage
Output Voltage
Rev 1. 1
BCD Semiconductor Manufacturing Limited
2
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2115
Functional Block Diagram
Figure 3. Functional Block Diagram of AP2115
Jul. 2011
Rev 1. 1
BCD Semiconductor Manufacturing Limited
3
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2115
Ordering Information
AP2115
G1: Green
Circuit Type
TR: Tape & Reel
Blank: Tube
Package
M: SOIC-8
R5: SOT-89-5
Package
Temperature
Range
1.2V: Fixed Output 1.2V
1.8V: Fixed Output 1.8V
2.5V: Fixed Output 2.5V
3.3V: Fixed Output 3.3V
Condition
1.2V
1.8V
SOIC-8
-40 to 85°C
2.5V
3.3V
SOT-89-5
-40 to 85°C
SOT-89-5
-40 to 85°C
1.2V (R5)
1.8V (R5)
2.5V (R5)
3.3V (R5)
1.2V (R5A)
1.8V (R5A)
2.5V (R5A)
3.3V (R5A)
Part Number
Marking ID
Packing
Type
AP2115M-1.2G1
AP2115M-1.2TRG1
AP2115M-1.8G1
AP2115M-1.8TRG1
AP2115M-2.5G1
AP2115M-2.5TRG1
AP2115M-3.3G1
AP2115M-3.3TRG1
AP2115R5-1.2TRG1
AP2115R5-1.8TRG1
AP2115R5-2.5TRG1
AP2115R5-3.3TRG1
AP2115R5A-1.2TRG1
AP2115R5A-1.8TRG1
AP2115R5A-2.5TRG1
AP2115R5A-3.3TRG1
2115M-1.2G1
2115M-1.2G1
2115M-1.8G1
2115M-1.8G1
2115M-2.5G1
2115M-2.5G1
2115M-3.3G1
2115M-3.3G1
G22G
G22H
G37H
G41H
G27D
G27G
G41F
G41G
Tube
Tape & Reel
Tube
Tape & Reel
Tube
Tape & Reel
Tube
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and green.
Jul. 2011
Rev 1. 1
BCD Semiconductor Manufacturing Limited
4
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2115
Absolute Maximum Ratings (Note 1)
Parameter
Power Supply Voltage
Operating Junction Temperature
Range
Storage temperature Range
Lead Temperature (Soldering,10
Seconds)
ESD (Machine Model)
Symbol
Value
Unit
VCC
6.5
V
TJ
150
ºC
TSTG
-65 to 150
ºC
TLEAD
260
ºC
400
V
4000
V
ESD (Human Body Model)
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Supply Voltage
Ambient Operation
Range
Jul. 2011
Temperature
Symbol
Min
Max
Unit
VIN
2.5
6.0
V
TA
-40
85
°C
Rev 1. 1
BCD Semiconductor Manufacturing Limited
5
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2115
Electrical Characteristics
AP2115-1.2 Electrical Characteristics (Note 2)
VIN=2.5V, CIN=4.7µF (Ceramic), COUT=4.7µF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TJ≤85°C
ranges, unless otherwise specified (Note 3).
Parameter
Output Voltage
Symbol
VOUT
Input Voltage
Test Conditions
VIN =2.5V, 1mA ≤ IOUT ≤ 30mA
IOUT(MAX)
VIN=2.5V, VOUT=1.182V to 1.218V
Load Regulation
△VOUT/VOUT
△IOUT
VIN=2.5V, 1mA ≤ IOUT ≤1A
Line Regulation
△VOUT/VOUT
△VIN
2.5V≤VIN≤6V, IOUT=30mA
Dropout Voltage
VDROP
Quiescent Current
IQ
Supply
Rejection
Output Voltage
Temperature Coefficient
Short Current Limit
Max
Unit
VOUT
×98.5%
1.2
VOUT
×101.5%
V
6
V
PSRR
△VOUT/VOUT
△T
ISHORT
IOUT=1.0A
VIN=2.5V, IOUT=0mA
Ripple 1Vp-p
VIN=2.5V,
IOUT=100mA
1300
mV
60
75
µA
VOUT=0V
50
mA
30
µVRMS
Standby Current
ISTD
VIN=3.5V, VEN in OFF mode
Thermal Resistance
1200
ppm/°C
Enable logic low, regulator off
Shutdown
%/V
±30
VIL
RDCHG
0.1
IOUT=30mA, TA =-40°C to 85°C
VEN Low Voltage
Shutdown
0.02
dB
Enable logic high, regulator on
VOUT Discharge Resistor
%/A
68
VIH
RPD
1
f=1KHz
VEN High Voltage
EN Pull Down Resistor
0.2
68
10Hz ≤ f ≤100kHz (No Load)
tS
A
f=100Hz
VNOISE
Start-up Time
1
-0.1
RMS Output Noise
Thermal
Temperature
Thermal
Hysteresis
Typ
VIN
Maximum Output Current
Power
Ratio
Min
No Load
Set EN pin at Low
1.5
0.4
0.01
µA
20
µs
3.0
MΩ
60
Ω
TOTSD
160
THYOTSD
25
θJC
1.0
V
°C
SOIC-8
74.6
SOT-89-5
47
°C/W
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Jul. 2011
Rev 1. 1
BCD Semiconductor Manufacturing Limited
6
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2115
Electrical Characteristics (Continued)
AP2115-1.8 Electrical Characteristics (Note 2)
VIN=2.8V, CIN=4.7µF (Ceramic), COUT=4.7µF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TJ≤85°C
ranges, unless otherwise specified (Note 3).
Parameter
Output Voltage
VOUT
Maximum Output Current
Line Regulation
Dropout Voltage
VDROP
Quiescent Current
Supply
IOUT(MAX)
△VOUT/VOUT
△IOUT
△VOUT/VOUT
△VIN
Load Regulation
Power
Ratio
Symbol
IQ
Rejection
Output Voltage
Temperature Coefficient
PSRR
△VOUT/VOUT
△T
Test Conditions
VIN =2.8V, 1mA ≤ IOUT ≤ 30mA
VIN=2.8V, VOUT=1.773V to 1.827V
Min
Typ
Max
Unit
98.5%
×VOUT
1.8
101.5%
× VOUT
V
1
VIN=2.8V, 1mA ≤ IOUT ≤1A
A
0.2
1
%/A
0.02
0.1
%/V
IOUT=1.0A
500
750
mV
VIN=2.8V, IOUT=0mA
60
75
µA
2.8V≤VIN≤6V, IOUT=30mA
Ripple 1Vp-p
VIN=2.8V,
IOUT=100mA
-0.1
f=100Hz
68
f=1KHz
68
dB
IOUT=30mA, TA =-40°C to 85°C
±30
ppm/°C
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
10Hz ≤ f ≤100kHz (No load)
30
µVRMS
VEN High Voltage
VIH
Enable logic high, regulator on
VEN Low Voltage
VIL
Enable logic low, regulator off
Standby Current
ISTD
VIN=3.5V, VEN in OFF mode
Start-up Time
tS
EN Pull Down Resistor
RPD
VOUT Discharge Resistor
RDCHG
Thermal
Temperature
Thermal
Hysteresis
Shutdown
Shutdown
Thermal Resistance
No Load
Set EN pin at Low
1.5
V
0.4
0.01
µA
20
µs
3.0
MΩ
60
Ω
TOTSD
160
THYOTSD
25
θJC
1.0
°C
SOIC-8
74.6
SOT-89-5
°C/W
47
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Jul. 2011
Rev 1. 1
BCD Semiconductor Manufacturing Limited
7
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2115
Electrical Characteristics (Continued)
AP2115-2.5 Electrical Characteristics (Note 2)
VIN=3.5V, CIN=4.7µF (Ceramic), COUT=4.7µF (Ceramic), Typical TA=25°C, Bold typeface applies over -40OC≤TJ≤85OC
ranges, unless otherwise specified (Note 3).
Parameter
Output Voltage
Symbol
VOUT
Maximum Output Current
IOUT(MAX)
Test Conditions
VIN =3.5V, 1mA ≤ IOUT ≤ 30mA
VIN=3.5V, VOUT=2.463V to 2.537V
Load Regulation
△VOUT/VOUT
△IOUT
VOUT=2.5V, VIN=VOUT+1V
1mA ≤ IOUT ≤1A
Line Regulation
△VOUT/VOUT
△VIN
3.5V≤VIN≤6V, IOUT=30mA
Dropout Voltage
VDROP
Quiescent Current
IQ
Standby Current
Power
Ratio
ISTD
Supply
Rejection
Output Voltage
Temperature Coefficient
PSRR
△VOUT/VOUT
△T
Min
Typ
Max
Unit
98.5%
×VOUT
2.5
101.5%
×VOUT
V
1
A
0.2
1
%/A
0.02
0.1
%/V
IOUT =1A
450
750
mV
VIN=3.5V, IOUT=0mA
60
80
µA
0.01
1.0
µA
-0.1
VIN=3.5V, VEN in OFF mode
Ripple 1Vp-p
VIN=3.5V,
IOUT=100mA
f=100Hz
65
f=1KHz
65
dB
IOUT=30mA
±30
ppm/°C
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
10Hz ≤ f ≤100kHz
30
µVRMS
VEN High Voltage
VIH
Enable logic high, regulator on
VEN Low Voltage
VIL
Enable logic low, regulator off
Start-up Time
tS
EN Pull Down Resistor
RPD
VOUT Discharge Resistor
RDCHG
Thermal
Temperature
Thermal
Hysteresis
Shutdown
Shutdown
Thermal Resistance
No Load
Set EN pin at Low
1.5
20
µs
3.0
MΩ
60
Ω
TOTSD
160
THYOTSD
25
θJC
V
0.4
°C
SOIC-8
74.6
SOT-89-5
47
°C/W
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Jul. 2011
Rev 1. 1
BCD Semiconductor Manufacturing Limited
8
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2115
Electrical Characteristics (Continued)
AP2115-3.3 Electrical Characteristics (Note 2)
VIN=4.3V, CIN=4.7µF (Ceramic), COUT=4.7µF (Ceramic), Typical TA=25°C, Bold typeface applies over -40OC≤TJ≤85OC
ranges, unless otherwise specified (Note 3).
Parameter
Output Voltage
VOUT
Maximum Output Current
Line Regulation
Dropout Voltage
VDROP
Quiescent Current
Supply
IOUT(MAX)
△VOUT/VOUT
△IOUT
△VOUT/VOUT
△VIN
Load Regulation
Power
Ratio
Symbol
IQ
Rejection
Output Voltage
Temperature Coefficient
PSRR
△VOUT/VOUT
△T
Test Conditions
VIN =4.3V, 1mA ≤ IOUT ≤ 30mA
VIN =4.3V, VOUT=3.25V to 3.35V
Min
Typ
Max
Unit
98.5%
×VOUT
3.3
101.5%
×VOUT
V
1
VIN=4.3V, 1mA ≤ IOUT ≤1A
A
0.2
1
%/A
0.02
0.1
%/V
IOUT=1A
450
750
mV
VIN=4.3V, IOUT=0mA
65
90
µA
Ripple 1Vp-p
VIN=4.3V,
IOUT=100mA
f=100Hz
65
f=1KHz
65
4.3V≤VIN≤6V, IOUT=30mA
-0.1
dB
IOUT=30mA
±30
ppm/°C
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
10Hz ≤ f ≤100kHz (No load)
30
µVRMS
VEN High Voltage
VIH
Enable logic high, regulator on
VEN Low Voltage
VIL
Enable logic low, regulator off
Standby Current
ISTD
VIN=3.5V, VEN in OFF mode
Start-up Time
tS
EN Pull Down Resistor
RPD
VOUT Discharge Resistor
RDCHG
Thermal
Temperature
Thermal
Hysteresis
Shutdown
Shutdown
Thermal Resistance
No Load
Set EN pin at Low
1.5
V
0.4
0.01
µA
20
µs
3.0
MΩ
60
Ω
TOTSD
160
THYOTSD
25
θJC
1.0
°C
SOIC-8
74.6
SOT-89-5
°C/W
47
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Jul. 2011
Rev 1. 1
BCD Semiconductor Manufacturing Limited
9
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2115
Typical Performance Characteristics
500.0
500
VIN=2.5V
AP2115_1.2V
450
400
TA=25 C
350
AP2115_3.3V
VIN=4.3V
400.0
O
Ground Current (µA)
Ground Current (µA)
450.0
O
TA=-40 C
O
TA=85 C
300
250
200
350.0
300.0
250.0
200.0
O
150.0
TA=-40 C
100
100.0
TA=25 C
50
50.0
TA=85 C
150
0
0.0
0.2
0.4
0.6
0.8
O
O
0.0
0.0
1.0
0.2
Output Current (A)
Figure 4. Ground Current vs. Output Current
0.6
0.8
1.0
Figure 5. Ground Current vs. Output Current
100
100
AP2115_1.2V
VIN=2.5V
90
AP2115_3.3V
VIN=4.3V
90
IOUT=0mA
Quiescent Current (µA)
Quiescent Current (µA)
0.4
Output Current (A)
80
70
60
50
40
IOUT=0mA
80
70
60
50
40
30
-40.0
-20.0
0.0
20.0
40.0
60.0
30
-40.0
80.0
-20.0
0.0
20.0
40.0
60.0
80.0
O
Temperature ( C)
O
Temperature ( C)
Figure 6. Quiescent Current vs. Temperature
Jul. 2011
Figure 7. Quiescent Current vs. Temperature
Rev 1. 1
BCD Semiconductor Manufacturing Limited
10
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2115
Typical Performance Characteristics (Continued)
100
110
AP2115_1.2V
IOUT=0mA
AP2115_3.3V
IOUT=0mA
100
80
Quiescent Current (µA)
Quiescent Current (µA)
90
70
60
50
o
40
TA= -40 C
o
TA= 25 C
30
90
80
70
60
o
TA= -40 C
50
o
o
TA= 25 C
TA= 85 C
o
40
20
10
TA= 85 C
30
2
3
4
5
6
3.5
4.0
4.5
Input Voltage (V)
5.0
5.5
6.0
Input Voltage (V)
Figure 8. Quiescent Current vs. Input Voltage
Figure 9. Quiescent Current vs. Input Voltage
3.35
1.216
3.34
VIN=2.5V
3.33
IO=10mA
IO=100mA
IO=500mA
IO=1000mA
1.208
1.204
1.200
Output Voltage (V)
Output Voltage (V)
1.212
AP2115_1.2V
1.196
1.192
AP2115_3.3V
VIN=4.3V
3.32
3.31
3.30
3.29
IO=10mA
IO=100mA
IO=500mA
IO=1000mA
3.28
1.188
3.27
1.184
3.26
1.180
-40
-20
0
20
40
60
3.25
-40
80
0
20
40
60
80
Temperature ( C)
Temperature ( C)
Figure 10. Output Voltage vs. Temperature
Jul. 2011
-20
o
o
Figure 11. Output Voltage vs. Temperature
Rev 1. 1
BCD Semiconductor Manufacturing Limited
11
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2115
Typical Performance Characteristics (Continued)
1.6
4.0
AP2115_3.3V
1.4
3.5
1.2
3.0
Output Voltage (V)
Output Voltage (V)
AP2115_1.2V
1.0
o
0.8
TA=-40 C
o
TA=25 C
0.6
o
TA=85 C
0.4
2
3
4
5
TA=-40 C
o
TA=25 C
1.5
o
TA=85 C
CIN=4.7µF
COUT=4.7µF
IOUT=10mA
0.5
0.0
1
o
2.0
1.0
CIN=4.7µF
COUT=4.7µF
IOUT=10mA
0.2
2.5
0.0
0.5
6
1.0
1.5
2.0
Input Voltage (V)
2.5
3.0
3.5
4.0
5.0
5.5
6.0
Input Voltage (V)
Figure 12. Output Voltage vs. Input Voltage
Figure 13. Output Voltage vs. Input Voltage
1.210
3.35
AP2115_1.2V
1.205
AP2115_3.3V
3.34
1.200
1.195
VIN=4.3V
3.33
Output Voltage (V)
Output Voltage (V)
4.5
1.190
1.185
1.180
VIN=2.5V
1.175
o
TA=-40 C
1.170
o
TA=25 C
1.165
o
TA=-40 C
o
TA=25 C
3.32
o
TA=85 C
3.31
3.30
3.29
o
TA=85 C
1.160
3.28
1.155
1.150
0.0
0.2
0.4
0.6
0.8
3.27
0.0
1.0
Output Current (A)
0.4
0.6
0.8
1.0
Output Current (A)
Figure 14. Output Voltage vs. Output Current
Jul. 2011
0.2
Figure 15. Output Voltage vs. Output Current
Rev 1. 1
BCD Semiconductor Manufacturing Limited
12
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2115
Typical Performance Characteristics (Continued)
1.3
AP2115_1.2V
1.1
3.0
Output Voltage (V)
1.0
Output Voltage (V)
AP2115_3.3V
3.5
1.2
0.9
0.8
0.7
0.6
VIN=2.5V
VIN=3.3V
0.5
0.4
2.5
2.0
1.5
VIN=4.3V
VIN=5V
o
TA=25 C
CIN=4.7µF
COUT=4.7µF
0.3
0.2
1.0
O
TA=25 C
CIN=4.7µF
COUT=4.7µF
0.5
0.1
0.0
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
1.4
0.2
0.4
0.6
Figure 16. Output Voltage vs. Output Current
1.0
1.2
1.4
1.6
Figure 17. Output Voltage vs. Output Current
1.8
1.8
1.4
CIN=4.7µF
COUT=4.7µF
1.2
TA=25 C
Maximum Output Current (A)
AP2115_1.2V
1.6
Maximum Output Current (A)
0.8
Output Current (A)
Output Current (A)
o
1.0
0.8
0.6
0.4
1.6
AP2115_3.3V
1.4
CIN=4.7µF
COUT=4.7µF
1.2
TA=25 C
o
1.0
0.8
0.6
0.4
0.2
0.2
0.0
0.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
4.0
6.0
Figure 18. Maximum Output Current vs. Input Voltage
Jul. 2011
4.5
5.0
5.5
6.0
Input Voltage (V)
Input Voltage (V)
Figure 19. Maximum Output Current vs. Input Voltage
Rev 1. 1
BCD Semiconductor Manufacturing Limited
13
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2115
Typical Performance Characteristics (Continued)
0.60
0.55
0.10
AP2115_3.3V
0.40
CIN=4.7µF
COUT=4.7µF
0.35
TA=-40 C
0.30
TA=25 C
0.25
TA=85 C
Output Short Current (A)
Dropout Voltage (V)
0.45
AP2115_1.2V
VIN=2.5V
0.09
0.50
o
o
o
0.20
0.15
0.08
0.07
0.06
0.05
0.10
0.04
0.05
0.00
0.0
0.2
0.4
0.6
0.8
0.03
-40
1.0
-20
Output Current (A)
20
40
Figure 21. Output Short Current vs. Temperature
80
AP2115_1.2V
AP2115_3.3V
VIN=4.3V
0.09
70
60
PSRR (dB)
0.08
0.07
0.06
50
40
o
TA=25 C
CIN=1µF
COUT=4.7µF
IOUT=10mA
30
0.05
20
0.04
10
Ripple=1Vpp
0
-20
0
20
40
60
80
100
1k
10k
100k
Frequency (Hz)
o
Temperature ( C)
Figure 22. Output Short Current vs. Temperature
Jul. 2011
80
Temperature ( C)
0.10
0.03
-40
60
o
Figure 20. Dropout Voltage vs. Output Current
Output Short Current (A)
0
Figure 23. PSRR vs. Frequency
Rev 1. 1
BCD Semiconductor Manufacturing Limited
14
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2115
Typical Performance Characteristics (Continued)
80
AP2115_3.3V
o
TA=25 C
CIN=1µF
COUT=4.7µF
70
60
PSRR (dB)
Ripple=1Vp-p
50
1A
IOUT
500mA/div
CIN=4.7µF
COUT=4.7µF
0A
VOUTAC
50mV/div
40
30
20
IOUT=10mA
IOUT=100mA
10
0
100
1k
10k
100k
Frequency (Hz)
Figure 24. PSRR vs. Frequency
Jul. 2011
Figure 25. Load Transient
Rev 1. 1
BCD Semiconductor Manufacturing Limited
15
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2115
Typical Application
VOUT
VIN
CIN
4.7 F
ON
1.2V/1.8V/
2.5V/3.3V
COUT
4.7 F
AP2115
VEN
GND
OFF
Figure 26. AP2115 Typical Application
Jul. 2011
Rev 1. 1
BCD Semiconductor Manufacturing Limited
16
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2115
Mechanical Dimensions
Unit: mm(inch)
R0.150(0.006)
SOIC-8
Jul. 2011
Rev 1. 1
BCD Semiconductor Manufacturing Limited
17
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2115
Mechanical Dimensions (Continued)
SOT-89-5
1.550(0.061)REF
Unit: mm(inch)
4.400(0.173)
4.600(0.181)
1.400(0.055)
1.030(0.041)REF
1.600(0.063)
45
0.900(0.035)
1.100(0.043)
2.300(0.091)
2.600(0.102)
3.950(0.156)
4.250(0.167)
2.060(0.081)REF
3
0.900(0.035)
1.100(0.043)
0.520(0.020)
0.350(0.014)
0.320(0.013)
0.320(0.013)
0.480(0.019)
10
0.450(0.018)
0.520(0.020)
3.000(0.118)
TYP
1.500(0.059)
1.800(0.071)
0.320(0.013)REF
3
2.210(0.087)REF
1.620(0.064)REF
R0.150(0.006)
10
Jul. 2011
Rev 1. 1
BCD Semiconductor Manufacturing Limited
18
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
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