AMD AM29LV116BB-120EC 16 megabit (2 m x 8-bit) cmos 3.0 volt-only boot sector flash memory Datasheet

PRELIMINARY
Am29LV116B
16 Megabit (2 M x 8-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
■ Top or bottom boot block configurations
available
■ Embedded Algorithms
— Regulated voltage range: 3.0 to 3.6 volt read
and write operations and for compatibility with
high performance 3.3 volt microprocessors
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
■ Manufactured on 0.35 µm process technology
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■ High performance
— Full voltage range: access times as fast as 90 ns
— Regulated voltage range: access times as fast
as 80 ns
■ Ultra low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 9 mA read current
— 15 mA program/erase current
■ Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
thirty-one 64 Kbyte sectors
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■ Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
■ Minimum 1,000,000 write cycle guarantee per
sector
■ Package option
— 40-pin TSOP
■ CFI (Common Flash Interface) compliant
— Provides device-specific information to the
system, allowing host software to easily
reconfigure for different Flash devices
■ Compatibility with JEDEC standards
— Pinout and software compatible with singlepower supply Flash
— Superior inadvertent write protection
■ Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
■ Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
■ Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
■ Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Publication# 21359 Rev: C Amendment/+2
Issue Date: March 1998
PRELIMINARY
GENERAL DESCRIPTION
The Am29LV116B is a 16 Mbit, 3.0 Volt-only Flash
memory organized as 2,097,152 bytes. The device is
offered in a 40-pin TSOP package. The byte-wide (x8)
data appears on DQ7–DQ0. All read, program, and
erase operations are accomplished using only a single
power supply. The device can also be programmed in
standard EPROM programmers.
The standard device offers access times of 80, 90, and
120 ns, allowing high speed microprocessors to
operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write
enable (WE#) and output enable (OE#) controls.
The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Commands are written to the command register using
standard microprocessor write timings. Register contents serve as input to an internal state-machine that
controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed
for the programming and erase operations. Reading
data out of the device is similar to reading from other
Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies
proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two
write cycles to program data instead of four.
Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase
algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle) status bits. After a program or erase cycle
has been completed, the device is ready to read array
data or accept another command.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
VCC detector that automatically inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of memory. This can be achieved in-system or via programming equipment.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the standby
mode. Power consumption is greatly reduced in both
these modes.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within
a sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron
injection.
Am29LV116B
2
PRELIMINARY
PRODUCT SELECTOR GUIDE
Family Part Number
Speed Options
Am29LV116B
Regulated Voltage Range: VCC =3.0–3.6 V
80R
Full Voltage Range: VCC = 2.7–3.6 V
90
120
Max access time, ns (tACC)
80
90
120
Max CE# access time, ns (tCE)
80
90
120
Max OE# access time, ns (tOE)
30
35
50
Note: See “AC Characteristics” for full specifications.
BLOCK DIAGRAM
DQ0–DQ7
RY/BY#
VCC
Sector Switches
VSS
Erase Voltage
Generator
RESET#
WE#
Input/Output
Buffers
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
OE#
VCC Detector
Address Latch
STB
Timer
A0–A20
STB
Data
Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
21359C-1
3
Am29LV116B
PRELIMINARY
CONNECTION DIAGRAMS
A16
A15
A14
A13
A12
A11
A9
A8
WE#
RESET#
NC
RY/BY#
A18
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
A17
VSS
A20
A19
A10
DQ7
DQ6
DQ5
DQ4
VCC
VCC
NC
DQ3
DQ2
DQ1
DQ0
OE#
VSS
CE#
A0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40-Pin Standard TSOP
40-Pin Reverse TSOP
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
A17
VSS
A20
A19
A10
DQ7
DQ6
DQ5
DQ4
VCC
VCC
NC
DQ3
DQ2
DQ1
DQ0
OE#
VSS
CE#
A0
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
A16
A15
A14
A13
A12
A11
A9
A8
WE#
RESET#
NC
RY/BY#
A18
A7
A6
A5
A4
A3
A2
A1
21359C-2
Am29LV116B
4
PRELIMINARY
PIN CONFIGURATION
A0–A20
LOGIC SYMBOL
= 21 addresses
21
DQ0–DQ7 = 8 data inputs/outputs
A0–A20
CE#
= Chip enable
OE#
= Output enable
WE#
= Write enable
CE#
RESET#
= Hardware reset pin, active low
OE#
RY/BY#
= Ready/Busy output
WE#
VCC
= 3.0 volt-only single power supply
(see Product Selector Guide for speed
options and voltage supply tolerances)
RESET#
VSS
= Device ground
NC
= Pin not connected internally
5
8
DQ0–DQ7
RY/BY#
21359C-3
Am29LV116B
PRELIMINARY
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the elements below.
Am29LV116B
T
80R
E
C
OPTIONAL PROCESSING
Blank = Standard Processing
B = Burn-in
(Contact an AMD representative for more information)
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (–40°C to +85°C)
E = Extended (–55°C to +125°C)
PACKAGE TYPE
E = 40-Pin Thin Small Outline Package (TSOP)
Standard Pinout (TS 040)
F = 40-Pin Thin Small Outline Package (TSOP)
Reverse Pinout (TSR040)
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T = Top Sector
B = Bottom Sector
DEVICE NUMBER/DESCRIPTION
Am29LV116B
16 Megabit (2 M x 8-Bit) CMOS Flash Memory
3.0 Volt-only Read, Program, and Erase
Valid Combinations
Valid Combinations
Am29LV116BT80R,
Am29LV116BB80R
Am29LV116BT90,
Am29LV116BB90
Am29LV116BT120,
Am29LV116BB120
EC, FC
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
EC, EI, EE,
FC, FI, FE
Am29LV116B
6
PRELIMINARY
DEVICE BUS OPERATIONS
This section describes the requirements and use of the
device bus operations, which are initiated through the
internal command register. The command register itself
does not occupy any addressable memory location.
The register is composed of latches that store the commands, along with the address and data information
needed to execute the command. The contents of the
Table 1.
Operation
Read
Write
register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the
device. Table 1 lists the device bus operations, the inputs and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.
Am29LV116B Device Bus Operations
CE#
OE#
WE#
RESET#
Addresses
DQ0–DQ7
L
L
H
H
AIN
DOUT
L
H
L
H
AIN
DIN
X
High-Z
VCC ±
0.3 V
X
X
VCC ±
0.3 V
Output Disable
L
H
H
H
X
High-Z
Reset
X
X
X
L
X
High-Z
Sector Protect (See Note)
L
H
L
VID
Sector Addresses,
A6 = L, A1 = H, A0 = L
DIN, DOUT
Sector Unprotect (See Note)
L
H
L
VID
Sector Addresses
A6 = H, A1 = H, A0 = L
DIN, DOUT
Temporary Sector Unprotect
X
X
X
VID
AIN
DIN
Standby
Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out
Note: The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector
Protection/Unprotection” section.
Requirements for Reading Array Data
Writing Commands/Command Sequences
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output control and gates array data to the output pins. WE#
should remain at VIH.
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory content occurs during the power transition. No command is
necessary in this mode to obtain array data. Standard
microprocessor read cycles that assert valid addresses
on the device address inputs produce valid data on the
device data outputs. The device remains enabled for
read access until the command register contents are
altered.
See “Reading Array Data” for more information. Refer
to the AC Read Operations table for timing specifications and to Figure 13 for the timing diagram. ICC1 in
the DC Characteristics table represents the active current specification for reading array data.
7
The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are required to program a byte, instead of four. The “Byte
Program Command Sequence” section has details on
programming data to the device using both standard
and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Tables 2 and 3 indicate the
address space that each sector occupies. A “sector address” consists of the address bits required to uniquely
select a sector. The “Command Definitions” section
has details on erasing a sector or the entire chip, or
suspending/resuming the erase operation.
After the system writes the autoselect command sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in this
Am29LV116B
PRELIMINARY
mode. Refer to the Autoselect Mode and Autoselect
Command Sequence sections for more information.
ICC2 in the DC Characteristics table represents the active current specification for the write mode. The “AC
Characteristics” section contains timing specification
tables and timing diagrams for write operations.
signals. Standard address access timings provide new
data when addresses are changed. While in sleep
mode, output data is latched and always available to
the system. I CC5 in the DC Characteristics table
r epresen ts th e au to matic sle ep mod e c urr ent
specification.
RESET#: Hardware Reset Pin
Program and Erase Operation Status
During an erase or program operation, the system may
check the status of the operation by reading the status
bits on DQ7–DQ0. Standard read cycle timings and ICC
read specifications apply. Refer to “Write Operation
Status” for more information, and to “AC Characteristics” for timing diagrams.
Standby Mode
When the system is not reading or writing to the device,
it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the
outputs are placed in the high impedance state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at VCC ± 0.3 V.
(Note that this is a more restricted voltage range than
VIH.) If CE# and RESET# are held at VIH, but not within
VCC ± 0.3 V, the device will be in the standby mode, but
the standby current will be greater. The device requires
standard access time (tCE) for read access when the
device is in either of these standby modes, before it is
ready to read data.
The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the
device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready
to accept another command sequence, to ensure data
integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VSS±0.3 V, the device
draws CMOS standby current (ICC4). If RESET# is held
at VIL but not within VSS±0.3 V, the standby current will
be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up
firmware from the Flash memory.
ICC3 in the DC Characteristics table represents the
standby current specification.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the internal reset operation is complete, which requires a
time of tREADY (during Embedded Algorithms). The
system can thus monitor RY/BY# to determine whether
the reset operation is complete. If RESET# is asserted
when a program or erase operation is not executing
(RY/BY# pin is “1”), the reset operation is completed
within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the RESET# pin returns to VIH.
Automatic Sleep Mode
Refer to the AC Characteristics tables for RESET# parameters and to Figure 14 for the timing diagram.
The device also enters the standby mode when the RESET# pin is driven low. Refer to the next section, “RESET#: Hardware Reset Pin”.
If the device is deselected during erasure or programming, the device draws active current until the
operation is completed.
The automatic sleep mode minimizes Flash device
energy consumption. The device automatically
enables this mode when addresses remain stable for
t AC C + 3 0 ns. The autom atic sl eep m ode is
independent of the CE#, WE#, and OE# control
Output Disable Mode
When the OE# input is at VIH, output from the device is
disabled. The output pins are placed in the high impedance state.
Am29LV116B
8
PRELIMINARY
Table 2.
9
Am29LV116BT Top Boot Sector Address Table
Sector
A20
A19
A18
A17
A16
A15
A14
A13
Sector Size
(Kbytes)
Address Range
(in hexadecimal)
SA0
0
0
0
0
0
X
X
X
64
000000–00FFFF
SA1
0
0
0
0
1
X
X
X
64
010000–01FFFF
SA2
0
0
0
1
0
X
X
X
64
020000–02FFFF
SA3
0
0
0
1
1
X
X
X
64
030000–03FFFF
SA4
0
0
1
0
0
X
X
X
64
040000–04FFFF
SA5
0
0
1
0
1
X
X
X
64
050000–05FFFF
SA6
0
0
1
1
0
X
X
X
64
060000–06FFFF
SA7
0
0
1
1
1
X
X
X
64
070000–07FFFF
SA8
0
1
0
0
0
X
X
X
64
080000–08FFFF
SA9
0
1
0
0
1
X
X
X
64
090000–09FFFF
SA10
0
1
0
1
0
X
X
X
64
0A0000–0AFFFF
SA11
0
1
0
1
1
X
X
X
64
0B0000–0BFFFF
SA12
0
1
1
0
0
X
X
X
64
0C0000–0CFFFF
SA13
0
1
1
0
1
X
X
X
64
0D0000–0DFFFF
SA14
0
1
1
1
0
X
X
X
64
0E0000–0EFFFF
SA15
0
1
1
1
1
X
X
X
64
0F0000–0FFFFF
SA16
1
0
0
0
0
X
X
X
64
100000–10FFFF
SA17
1
0
0
0
1
X
X
X
64
110000–11FFFF
SA18
1
0
0
1
0
X
X
X
64
120000–12FFFF
SA19
1
0
0
1
1
X
X
X
64
130000–13FFFF
SA20
1
0
1
0
0
X
X
X
64
140000–14FFFF
SA21
1
0
1
0
1
X
X
X
64
150000–15FFFF
SA22
1
0
1
1
0
X
X
X
64
160000–16FFFF
SA23
1
0
1
1
1
X
X
X
64
170000–17FFFF
SA24
1
1
0
0
0
X
X
X
64
180000–18FFFF
SA25
1
1
0
0
1
X
X
X
64
190000–19FFFF
SA26
1
1
0
1
0
X
X
X
64
1A0000–1AFFFF
SA27
1
1
0
1
1
X
X
X
64
1B0000–1BFFFF
SA28
1
1
1
0
0
X
X
X
64
1C0000–1CFFFF
SA29
1
1
1
0
1
X
X
X
64
1D0000–1DFFFF
SA30
1
1
1
1
0
X
X
X
64
1E0000–1EFFFF
SA31
1
1
1
1
1
0
X
X
32
1F0000–1F7FFF
SA32
1
1
1
1
1
1
0
0
8
1F8000–1F9FFF
SA33
1
1
1
1
1
1
0
1
8
1FA000–1FBFFF
SA34
1
1
1
1
1
1
1
X
16
1FC000–1FFFFF
Am29LV116B
PRELIMINARY
Table 3.
Am29LV116BB Bottom Boot Sector Address Table
Sector
A20
A19
A18
A17
A16
A15
A14
A13
Sector Size
(Kbytes)
Address Range
(in hexadecimal)
SA0
0
0
0
0
0
0
0
X
16
000000–003FFF
SA1
0
0
0
0
0
0
1
0
8
004000–005FFF
SA2
0
0
0
0
0
0
1
1
8
006000–007FFF
SA3
0
0
0
0
0
1
X
X
32
008000–00FFFF
SA4
0
0
0
0
1
X
X
X
64
010000–01FFFF
SA5
0
0
0
1
0
X
X
X
64
020000–02FFFF
SA6
0
0
0
1
1
X
X
X
64
030000–03FFFF
SA7
0
0
1
0
0
X
X
X
64
040000–04FFFF
SA8
0
0
1
0
1
X
X
X
64
050000–05FFFF
SA9
0
0
1
1
0
X
X
X
64
060000–06FFFF
SA10
0
0
1
1
1
X
X
X
64
070000–07FFFF
SA11
0
1
0
0
0
X
X
X
64
080000–08FFFF
SA12
0
1
0
0
1
X
X
X
64
090000–09FFFF
SA13
0
1
0
1
0
X
X
X
64
0A0000–0AFFFF
SA14
0
1
0
1
1
X
X
X
64
0B0000–0BFFFF
SA15
0
1
1
0
0
X
X
X
64
0C0000–0CFFFF
SA16
0
1
1
0
1
X
X
X
64
0D0000–0DFFFF
SA17
0
1
1
1
0
X
X
X
64
0E0000–0EFFFF
SA18
0
1
1
1
1
X
X
X
64
0F0000–0FFFFF
SA19
1
0
0
0
0
X
X
X
64
100000–10FFFF
SA20
1
0
0
0
1
X
X
X
64
110000–11FFFF
SA21
1
0
0
1
0
X
X
X
64
120000–12FFFF
SA22
1
0
0
1
1
X
X
X
64
130000–13FFFF
SA23
1
0
1
0
0
X
X
X
64
140000–14FFFF
SA24
1
0
1
0
1
X
X
X
64
150000–15FFFF
SA25
1
0
1
1
0
X
X
X
64
160000–16FFFF
SA26
1
0
1
1
1
X
X
X
64
170000–17FFFF
SA27
1
1
0
0
0
X
X
X
64
180000–18FFFF
SA28
1
1
0
0
1
X
X
X
64
190000–19FFFF
SA29
1
1
0
1
0
X
X
X
64
1A0000–1AFFFF
SA30
1
1
0
1
1
X
X
X
64
1B0000–1BFFFF
SA31
1
1
1
0
0
X
X
X
64
1C0000–1CFFFF
SA32
1
1
1
0
1
X
X
X
64
1D0000–1DFFFF
SA33
1
1
1
1
0
X
X
X
64
1E0000–1EFFFF
SA34
1
1
1
1
1
X
X
X
64
1F0000–1FFFFF
Am29LV116B
10
PRELIMINARY
Autoselect Mode
Table 4. In addition, when verifying sector protection,
the sector address must appear on the appropriate
highest order address bits (see Tables 2 and 3). Table
4 shows the remaining address bits that are don’t care.
When all necessary bits have been set as required, the
programming equipment may then read the corresponding identifier code on DQ7-DQ0.
The autoselect mode provides manufacturer and device identification, and sector protection verification,
through identifier codes output on DQ7–DQ0. This
mode is primarily intended for programming equipment
to automatically match a device to be programmed with
its corresponding programming algorithm. However,
the autoselect codes can also be accessed in-system
through the command register.
To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in Table 9. This method
does not require VID. See “Command Definitions” for
details on using the autoselect mode.
When using programming equipment, the autoselect
mode requires VID (11.5 V to 12.5 V) on address pin
A9. Address pins A6, A1, and A0 must be as shown in
Table 4.
Am29LV116B Autoselect Codes (High Voltage Method)
CE#
OE#
WE#
A20
to
A13
Manufacturer ID: AMD
L
L
H
X
X
VID
X
L
X
L
L
01h
Device ID: Am29LV116B
(Top Boot Block)
L
L
H
X
X
VID
X
L
X
L
H
C7h
Device ID: Am29LV116B
(Bottom Boot Block)
L
L
H
X
X
VID
X
L
X
L
H
4Ch
Description
A12
to
A10
A9
A8
to
A7
A6
A5
to
A2
A1
A0
DQ7
to
DQ0
01h
(protected)
Sector Protection Verification
L
L
H
SA
X
VID
X
L
X
H
L
00h
(unprotected)
L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.
Sector Protection/Unprotection
The hardware sector protection feature disables both
program and erase operations in any sector. The hardware sector unprotection feature re-enables both program and erase operations in previously protected
sectors. Sector protection/unprotection can be implemented via two methods.
The primary method requires VID on the RESET# pin
only, and can be implemented either in-system or via
programming equipment. Figure 1 shows the algorithms and Figure 21 shows the timing diagram. This
method uses standard microprocessor bus cycle timing. For sector unprotect, all unprotected sectors must
first be protected prior to the first sector unprotect write
cycle.
The alternate method intended only for programming
equipment requires VID on address pin A9 and OE#.
This method is compatible with programmer routines
written for earlier 3.0 volt-only AMD flash devices. Pub-
11
lication number 21586 contains further details; contact
an AMD representative to request a copy.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is protected
or unprotected. See “Autoselect Mode” for details.
Temporary Sector Unprotect
This feature allows temporary unprotection of previously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly protected
sectors can be programmed or erased by selecting the
sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are
protected again. Figure 2 shows the algorithm, and
Figure 20 shows the timing diagrams, for this feature.
Am29LV116B
PRELIMINARY
START
START
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
unprotect address
PLSCNT = 1
RESET# = VID
Wait 1 µs
Temporary Sector
Unprotect Mode
No
PLSCNT = 1
RESET# = VID
Wait 1 µs
No
First Write
Cycle = 60h?
First Write
Cycle = 60h?
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Protect:
Write 60h to sector
address with
A6 = 0, A1 = 1,
A0 = 0
Yes
Set up first sector
address
Sector Unprotect:
Write 60h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Wait 150 µs
Increment
PLSCNT
Temporary Sector
Unprotect Mode
Verify Sector
Protect: Write 40h
to sector address
with A6 = 0,
A1 = 1, A0 = 0
Reset
PLSCNT = 1
Wait 15 ms
Read from
sector address
with A6 = 0,
A1 = 1, A0 = 0
Verify Sector
Unprotect: Write
40h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Increment
PLSCNT
No
No
PLSCNT
= 25?
Yes
Yes
No
Yes
Device failed
Read from
sector address
with A6 = 1,
A1 = 1, A0 = 0
Data = 01h?
PLSCNT
= 1000?
Protect another
sector?
No
No
Data = 00h?
Yes
Yes
Remove VID
from RESET#
Device failed
Last sector
verified?
Write reset
command
Sector Protect
Algorithm
Sector Protect
complete
Set up
next sector
address
No
Yes
Sector Unprotect
Algorithm
Remove VID
from RESET#
Write reset
command
Sector Unprotect
complete
21359C-4
Figure 1.
In-System Sector Protect/Unprotect Algorithms
Am29LV116B
12
PRELIMINARY
against inadvertent writes (refer to Table 9 for command definitions). In addition, the following hardware
data protection measures prevent accidental erasure
or programming, which might otherwise be caused by
spurious system level signals during VCC power-up
and power-down transitions, or from system noise.
START
RESET# = VID
(Note 1)
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until VCC
is greater than VLKO. The system must provide the
proper signals to the control pins to prevent unintentional writes when VCC is greater than VLKO.
Perform Erase or
Program Operations
RESET# = VIH
Temporary Sector
Unprotect Completed
(Note 2)
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
21359C-5
Notes:
1. All protected sectors unprotected.
Logical Inhibit
2. All previously protected sectors are protected once
again.
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Figure 2.
Power-Up Write Inhibit
Temporary Sector Unprotect Operation
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
13
If WE# = CE# = VIL and OE# = VIH during power up, the
device does not accept commands on the rising edge
of WE#. The internal state machine is automatically
reset to reading array data on power-up.
Am29LV116B
PRELIMINARY
COMMON FLASH MEMORY INTERFACE
(CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device
families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
This device enters the CFI Query mode when the
system writes the CFI Query command, 98h, to
address 55h, any time the device is ready to read array
Table 5.
data. The system can read CFI information at the
addresses given in Tables 5–8. To terminate reading
CFI data, the system must write the reset command.
The system can also write the CFI query command
when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 5–8. The
system must write the reset command to return the
device to the autoselect mode.
For further information, please refer to the CFI Specification and CFI Publication 100, available via the World
Wide Web at http://www.amd.com/products/nvd/overview/cfi.html. Alternatively, contact an AMD representative for copies of these documents.
CFI Query Identification String
Addresses
Data
Description
10h
11h
12h
51h
52h
59h
Query Unique ASCII string “QRY”
13h
14h
02h
00h
Primary OEM Command Set
15h
16h
40h
00h
Address for Primary Extended Table
17h
18h
00h
00h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
00h
00h
Address for Alternate OEM Extended Table (00h = none exists)
Table 6.
System Interface String
Addresses
Data
Description
1Bh
27h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
36h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
00h
VPP Min. voltage (00h = no VPP pin present)
1Eh
00h
VPP Max. voltage (00h = no VPP pin present)
1Fh
04h
Typical timeout per single byte/word write 2N µs
20h
00h
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h
0Ah
Typical timeout per individual block erase 2N ms
22h
00h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
05h
Max. timeout for byte/word write 2N times typical
24h
00h
Max. timeout for buffer write 2N times typical
25h
04h
Max. timeout per individual block erase 2N times typical
26h
00h
Max. timeout for full chip erase 2N times typical (00h = not supported)
Am29LV116B
14
PRELIMINARY
Table 7.
Addresses
Data
Description
N
27h
15h
Device Size = 2 byte
28h
29h
00h
00h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
00h
00h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
04h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
00h
00h
40h
00h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
01h
00h
20h
00h
Erase Block Region 2 Information
35h
36h
37h
38h
00h
00h
80h
00h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
1Eh
00h
00h
01h
Erase Block Region 4 Information
Table 8.
15
Device Geometry Definition
Primary Vendor-Specific Extended Query
Addresses
Data
Description
40h
41h
42h
50h
52h
49h
Query-unique ASCII string “PRI”
43h
31h
Major version number, ASCII
44h
30h
Minor version number, ASCII
45h
00h
Address Sensitive Unlock
0 = Required, 1 = Not Required
46h
02h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
01h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
01h
Sector Temporary Unprotect: 00 = Not Supported, 01 = Supported
49h
04h
Sector Protect/Unprotect scheme
01 = 29F040 mode, 02 = 29F016 mode,
03 = 29F400 mode, 04 = 29LV800A mode
4Ah
00h
Simultaneous Operation: 00 = Not Supported, 01 = Supported
4Bh
00h
Burst Mode Type: 00 = Not Supported, 01 = Supported
4Ch
00h
Page Mode Type: 00 = Not Supported, 01 = 4 Word Page,
02 = 8 Word Page
Am29LV116B
PRELIMINARY
COMMAND DEFINITIONS
Writing specific address and data commands or sequences into the command register initiates device operations. Table 9 defines the valid register command
sequences. Writing incorrect address and data values or writing them in the improper sequence resets
the device to reading array data.
All addresses are latched on the falling edge of WE# or
CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the appropriate timing diagrams in the
“AC Characteristics” section.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array
data after completing an Embedded Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The system can read array data using the standard read timings, except that if it reads at an address within erasesuspended sectors, the device outputs status data.
After completing a programming operation in the Erase
Suspend mode, the system may once again read array
data with the same exception. See “Erase Suspend/Erase Resume Commands” for more information
on this mode.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command must
be written to return to reading array data (also applies
to autoselect during Erase Suspend).
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to reading array data (also applies during Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and devices codes,
and determine whether or not a sector is protected.
Table 9 shows the address and data requirements. This
method is an alternative to that shown in Table 4, which
is intended for PROM programmers and requires VID
on address bit A9.
The autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect command. The device then enters the autoselect mode,
and the system may read at any address any number
of times, without initiating another command sequence.
A read cycle at address XX00h retrieves the manufacturer code. A read cycle at address XX01h returns the
device code. A read cycle containing a sector address
(SA) and the address 02h returns 01h if that sector is
protected, or 00h if it is unprotected. Refer to Tables 2
and 3 for valid sector addresses.
The system must issue the reset command to re-enable the device for reading array data if DQ5 goes high,
or while in the autoselect mode. See the “Reset Command” section, next.
The system must write the reset command to exit the
autoselect mode and return to reading array data.
See also “Requirements for Reading Array Data” in the
“Device Bus Operations” section for more information.
The Read Operations table provides the read parameters, and Figure 13 shows the timing diagram.
The device programs one byte of data for each program operation. The command sequence requires four
bus cycles, and is initiated by writing two unlock write
cycles, followed by the program set-up command. The
program address and data are written next, which in
turn initiate the Embedded Program algorithm. The
system is not required to provide further controls or timings. The device automatically generates the program
pulses and verifies the programmed cell margin. Table
9 shows the address and data requirements for the
byte program command sequence.
Reset Command
Writing the reset command to the device resets the device to reading array data. Address bits are don’t care
for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the device to
reading array data (also applies to programming in
Erase Suspend mode). Once programming begins,
however, the device ignores reset commands until the
operation is complete.
Byte Program Command Sequence
When the Embedded Program algorithm is complete,
the device then returns to reading array data and addresses are no longer latched. The system can determine the status of the program operation by using
DQ7, DQ6, or RY/BY#. See “Write Operation Status”
for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the programming operation. The Byte Program command se-
Am29LV116B
16
PRELIMINARY
quence should be reinitiated once the device has reset
to reading array data, to ensure data integrity.
START
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from a “0” back to a “1”. Attempting to do so may halt
the operation and set DQ5 to “1,” or cause the Data#
Polling algorithm to indicate the operation was successful. However, a succeeding read will show that the
data is still “0”. Only erase operations can convert a “0”
to a “1”.
Write Program
Command Sequence
Data Poll
from System
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program bytes to the device faster than using the standard
program command sequence. The unlock bypass command sequence is initiated by first writing two unlock
cycles. This is followed by a third write cycle containing
the unlock bypass command, 20h. The device then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is
required to program in this mode. The first cycle in this
sequence contains the unlock bypass program command, A0h; the second cycle contains the program address and data. Additional data is programmed in the
same manner. This mode dispenses with the initial two
unlock cycles required in the standard program command sequence, resulting in faster total programming
time. Table 9 shows the requirements for the command
sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the data
90h; the second cycle the data 00h. Addresses are
don’t cares for both cycles. The device then returns to
reading array data.
Embedded
Program
algorithm
in progress
Verify Data?
Yes
Increment Address
No
Last Address?
Yes
Programming
Completed
21359C-6
Note: See Table 9 for program command sequence.
Figure 3 illustrates the algorithm for the program operation. See the Erase/Program Operations table in “AC
Characteristics” for parameters, and to Figure 15 for
timing diagrams
17
No
Am29LV116B
Figure 3.
Program Operation
PRELIMINARY
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any controls or timings during these operations. Table 9 shows
the address and data requirements for the chip erase
command sequence.
ensure all commands are accepted. The interrupts can
be re-enabled after the last Sector Erase command is
written. If the time between additional sector erase
commands can be assumed to be less than 50 µs, the
system need not monitor DQ3. Any command other
than Sector Erase or Erase Suspend during the
time-out period resets the device to reading array
data. The system must rewrite the command sequence
and any additional sector addresses and commands.
The system can monitor DQ3 to determine if the sector
erase timer has timed out. (See the “DQ3: Sector Erase
Timer” section.) The time-out begins from the rising
edge of the final WE# pulse in the command sequence.
Any commands written to the chip during the Embedded Erase algorithm are ignored. Note that a hardware
reset during the chip erase operation immediately terminates the operation. The Chip Erase command sequence should be reinitiated once the device has
returned to reading array data, to ensure data integrity.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands
are ignored. Note that a hardware reset during the
sector erase operation immediately terminates the operation. The Sector Erase command sequence should
be reinitiated once the device has returned to reading
array data, to ensure data integrity.
The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. See
“Write Operation Status” for information on these status bits. When the Embedded Erase algorithm is complete, the device returns to reading array data and
addresses are no longer latched.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or
RY/BY#. (Refer to “Write Operation Status” for information on these status bits.)
Figure 4 illustrates the algorithm for the erase operation. See the Erase/Program Operations tables in “AC
Characteristics” for parameters, and to Figure 16 for
timing diagrams.
Figure 4 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations tables in
the “AC Characteristics” section for parameters, and to
Figure 16 for timing diagrams.
Sector Erase Command Sequence
Erase Suspend/Erase Resume Commands
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the address of the sector to be erased, and the sector erase
command. Table 9 shows the address and data requirements for the sector erase command sequence.
The Erase Suspend command allows the system to interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for
erasure. This command is valid only during the sector
erase operation, including the time-out period 50 µs
during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program algorithm. Writing the Erase Suspend command during the
Sector Erase time-out immediately terminates the
time-out period and suspends the erase operation. Addresses are “don’t-cares” when writing the Erase Suspend command.
The device does not require the system to preprogram
the memory prior to erase. The Embedded Erase algorithm automatically programs and verifies the sector for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or timings during these operations.
After the command sequence is written, a sector erase
time-out of 50 µs begins. During the time-out period,
additional sector addresses and sector erase commands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 50 µs,
otherwise the last address and command might not be
accepted, and erasure may begin. It is recommended
that processor interrupts be disabled during this time to
When the Erase Suspend command is written during a
sector erase operation, the device requires a maximum
of 20 µs to suspend the erase operation. However,
when the Erase Suspend command is written during
the sector erase time-out, the device immediately terminates the time-out period and suspends the erase
operation.
After the erase operation has been suspended, the
system can read array data from or program data to
any sector not selected for erasure. (The device “erase
Am29LV116B
18
PRELIMINARY
suspends” all sectors selected for erasure.) Normal
read and write timings and command definitions apply.
Reading at any address within erase-suspended sectors produces status data on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
See “Write Operation Status” for information on these
status bits.
START
Write Erase
Command Sequence
After an erase-suspended program operation is complete, the system can once again read array data within
non-suspended sectors. The system can determine the
status of the program operation using the DQ7 or DQ6
status bits, just as in the standard program operation.
See “Write Operation Status” for more information.
Data Poll
from System
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence”
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the device has resumed erasing.
19
No
Embedded
Erase
algorithm
in progress
Data = FFh?
Yes
Erasure Completed
21359C-7
Notes:
1. See Table 9 for erase command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
Am29LV116B
Figure 4.
Erase Operation
PRELIMINARY
Table 9.
Cycles
Bus Cycles (Notes 2–4)
Addr
Data
Read (Note 5)
1
RA
RD
Reset (Note 6)
1
XXX
F0
4
555
4
555
Autoselect (Note 7)
Command Sequence
(Note 1)
Manufacturer ID
Device ID,
Top Boot Block
Device ID,
Bottom Boot Block
Am29LV116B Command Definitions
First
Second
Third
Fourth
Addr
Data
Addr
Data
Addr
Data
AA
2AA
55
555
90
X00
01
AA
2AA
55
555
90
X01
Fifth
Sixth
Addr
Data
Addr
Data
C7
4C
4
555
AA
2AA
55
555
90
SA
X02
00
Byte Program
4
555
AA
2AA
55
555
A0
PA
PD
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass Program
(Note 9)
2
XXX
A0
PA
PD
Unlock Bypass Reset
(Note 10)
2
XXX
90
XXX
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
2AA
55
555
80
555
AA
2AA
55
SA
30
Sector Protect
Verify (Note 8)
Sector Erase
6
555
AA
Erase Suspend (Note 11)
1
XXX
B0
Erase Resume (Note 12)
1
XXX
30
01
Legend:
X = Don’t care
PD = Data to be programmed at location PA. Data is latched
on the rising edge of WE# or CE# pulse.
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed.
Addresses are latched on the falling edge of the WE# or CE#
pulse.
Notes:
1. See Table 1 for descriptions of bus operations.
SA = Address of the sector to be erased or verified. Address
bits A20–A13 uniquely select any sector.
2. All values are in hexadecimal.
8. The data is 00h for an unprotected sector and 01h for a
protected sector.
3. Except when reading array or autoselect data, all bus
cycles are write operations.
9. The Unlock Bypass command is required prior to the
Unlock Bypass Program command.
4. Address bits A20–A11 are don’t care for unlock and
command cycles, except when PA or SA is required.
10. The Unlock Bypass Reset command is required to return
to reading array data when the device is in the Unlock
Bypass mode.
5. No unlock or command cycles required when device is in
read mode.
6. The Reset command is required to return to the read
mode when the device is in the autoselect mode or if DQ5
goes high.
7. The fourth cycle of the autoselect command sequence is
a read cycle.
11. The system may read and program functions in nonerasing sectors, or enter the autoselect mode, when in the
Erase Suspend mode. The Erase Suspend command is
valid only during a sector erase operation.
12. The Erase Resume command is valid only during the
Erase Suspend mode.
Am29LV116B
20
PRELIMINARY
WRITE OPERATION STATUS
The device provides several bits to determine the status of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7,
and RY/BY#. Table 10 and the following subsections
describe the functions of these bits. DQ7, RY/BY#, and
DQ6 each offer a method for determining whether a
program or erase operation is complete or in progress.
These three bits are discussed first.
START
Read DQ7–DQ0
Addr = VA
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Algorithm is in progress or
completed, or whether the device is in Erase Suspend.
Data# Polling is valid after the rising edge of the final
WE# pulse in the program or erase command sequence.
During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the
Embedded Program algorithm is complete, the device
outputs the datum programmed to DQ7. The system
must provide the program address to read valid status
information on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then the device returns to reading
array data.
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase algorithm is complete, or if the device enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
This is analogous to the complement/true datum output
described for the Embedded Program algorithm: the
erase function changes all the bits in a sector to “1”;
prior to this, the device outputs the “complement,” or
“0.” The system must provide an address within any of
the sectors selected for erasure to read valid status information on DQ7.
After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling
on DQ7 is active for approximately 100 µs, then the device returns to reading array data. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the selected sectors that are protected.
DQ7 = Data?
No
No
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within any
sector selected for erasure. During chip erase, a valid
address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
When the system detects DQ7 has changed from the
complement to true data, it can read valid data at DQ7–
DQ0 on the following read cycles. This is because DQ7
may change asynchronously with DQ0–DQ6 while
Output Enable (OE#) is asserted low. Figure 17, Data#
Polling Timings (During Embedded Algorithms), in the
“AC Characteristics” section illustrates this.
Table 10 shows the outputs for Data# Polling on DQ7.
Figure 5 shows the Data# Polling algorithm.
21
Yes
Am29LV116B
21359C-8
Figure 5.
Data# Polling Algorithm
PRELIMINARY
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin that
indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to VCC. (The RY/BY# pin is not available on the 44-pin SO package.)
If the output is low (Busy), the device is actively erasing
or programming. (This includes programming in the
Erase Suspend mode.) If the output is high (Ready),
the device is ready to read array data (including during
the Erase Suspend mode), or is in the standby mode.
Table 10 shows the outputs for RY/BY#. Figures 13, 15
and 16 shows RY/BY# for reset, program, and erase
operations, respectively.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete,
or whether the device has entered the Erase Suspend
mode. Toggle Bit I may be read at any address, and is
valid after the rising edge of the final WE# pulse in the
command sequence (prior to the program or erase operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause
DQ6 to toggle (The system may use either OE# or CE#
to control the read cycles). When the operation is complete, DQ6 stops toggling.
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for
approximately 100 µs, then returns to reading array
data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are
protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erasesuspended. When the device is actively erasing (that
is, the Embedded Erase algorithm is in progress), DQ6
toggles. When the device enters the Erase Suspend
mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing
or erase-suspended. Alternatively, the system can use
DQ7 (see the subsection on DQ7: Data# Polling).
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 µs after the program
command sequence is written, then returns to reading
array data.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Program algorithm is complete.
Table 10 shows the outputs for Toggle Bit I on DQ6. Figure 6 shows the toggle bit algorithm in flowchart form,
and the section “Reading Toggle Bits DQ6/DQ2” explains the algorithm. Figure 18 in the “AC Characteristics” section shows the toggle bit timing diagrams.
Figure 19 shows the differences between DQ2 and
DQ6 in graphical form. See also the subsection on
DQ2: Toggle Bit II.
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control
the read cycles.) But DQ2 cannot distinguish whether
the sector is actively erasing or is erase-suspended.
DQ6, by comparison, indicates whether the device is
actively erasing, or is in Erase Suspend, but cannot
distinguish which sectors are selected for erasure.
Thus, both status bits are required for sector and mode
information. Refer to Table 10 to compare outputs for
DQ2 and DQ6.
Figure 6 shows the toggle bit algorithm in flowchart
form, and the section “Reading Toggle Bits DQ6/DQ2”
explains the algorithm. See also the DQ6: Toggle Bit I
subsection. Figure 18 shows the toggle bit timing diagram. Figure 19 shows the differences between DQ2
and DQ6 in graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 6 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Typically, the
system would note and store the value of the toggle bit
after the first read. After the second read, the system
would compare the new value of the toggle bit with the
first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can
read array data on DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling,
since the toggle bit may have stopped toggling just as
DQ5 went high. If the toggle bit is no longer toggling,
the device has successfully completed the program or
erase operation. If it is still toggling, the device did not
completed the operation successfully, and the system
Am29LV116B
22
PRELIMINARY
must write the reset command to return to reading
array data.
START
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not
gone high. The system may continue to monitor the
toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other
system tasks. In this case, the system must start at the
beginning of the algorithm when it returns to determine
the status of the operation (top of Figure 6).
Read DQ7–DQ0
(Note 1)
Read DQ7–DQ0
Table 10 shows the outputs for Toggle Bit I on DQ6. Figure 6 shows the toggle bit algorithm. Figure 18 in the
“AC Characteristics” section shows the toggle bit timing
diagrams. Figure 19 shows the differences between
DQ2 and DQ6 in graphical form. See also the subsection on DQ2: Toggle Bit II.
Toggle Bit
= Toggle?
No
Yes
No
DQ5 = 1?
Yes
Read DQ7–DQ0
Twice
Toggle Bit
= Toggle?
(Notes
1, 2)
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Notes:
1. Read toggle bit twice to determine whether or not it is
toggling. See text.
2. Recheck toggle bit because it may stop toggling as DQ5
changes to “1”. See text.
21359C-9
Figure 6.
23
Am29LV116B
Toggle Bit Algorithm
PRELIMINARY
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a “1.” This is a failure
condition that indicates the program or erase cycle was
not successfully completed.
The DQ5 failure condition may appear if the system
tries to program a “1” to a location that is previously
programmed to “0.” Only an erase operation can
change a “0” back to a “1.” Under this condition, the
device halts the operation, and when the operation has
exceeded the timing limits, DQ5 produces a “1.”
Under both these conditions, the system must issue
the reset command to return the device to reading
array data.
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not an
erase operation has begun. (The sector erase timer
does not apply to the chip erase command.) If addi-
Table 10.
Erase
Suspend
Mode
After the sector erase command sequence is written,
the system should read the status on DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure the device has accepted the command sequence, and then read DQ3. If
DQ3 is “1”, the internally controlled erase cycle has begun; all further commands (other than Erase Suspend)
are ignored until the erase operation is complete. If
DQ3 is “0”, the device will accept additional sector
erase commands. To ensure the command has been
accepted, the system software should check the status
of DQ3 prior to and following each subsequent sector
erase command. If DQ3 is high on the second status
check, the last command might not have been accepted. Table 10 shows the outputs for DQ3.
Write Operation Status
DQ7
(Note 2)
DQ6
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
DQ7#
Toggle
0
N/A
No toggle
0
Embedded Erase Algorithm
0
Toggle
0
1
Toggle
0
Reading within Erase
Suspended Sector
1
No toggle
0
N/A
Toggle
1
Reading within Non-Erase
Suspended Sector
Data
Data
Data
Data
Data
1
Erase-Suspend-Program
DQ7#
Toggle
0
N/A
N/A
0
Operation
Standard
Mode
tional sectors are selected for erasure, the entire timeout also applies after each additional sector erase command. When the time-out is complete, DQ3 switches
from “0” to “1.” If the time between additional sector
erase commands from the system can be assumed to
be less than 50 µs, the system need not monitor DQ3.
See also the “Sector Erase Command Sequence” section.
Embedded Program Algorithm
RY/BY#
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
See “DQ5: Exceeded Timing Limits” for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
Am29LV116B
24
PRELIMINARY
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –65°C to +125°C
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
A9, OE#, and
RESET# (Note 2) . . . . . . . . . . . .–0.5 V to +12.5 V
20 ns
20 ns
+0.8 V
–0.5 V
–2.0 V
20 ns
All other pins (Note 1) . . . . . . –0.5 V to VCC+0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V. During
voltage transitions, input or I/O pins may undershoot VSS
to –2.0 V for periods of up to 20 ns. See Figure 7.
Maximum DC voltage on input or I/O pins is VCC +0.5 V.
During voltage transitions, input or I/O pins may overshoot
to VCC +2.0 V for periods up to 20 ns. See Figure 8.
2. Minimum DC input voltage on pins A9, OE#, and RESET#
is –0.5 V. During voltage transitions, A9, OE#, and
RESET# may undershoot VSS to –2.0 V for periods of up
to 20 ns. See Figure 7. Maximum DC input voltage on pin
A9 is +12.5 V which may overshoot to 14.0 V for periods
up to 20 ns.
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
21359C-10
Figure 7.
20 ns
VCC
+2.0 V
VCC
+0.5 V
2.0 V
20 ns
20 ns
21359C-11
Figure 8.
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (TA) . . . . . . . . . . . 0°C to +70°C
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C
Extended (E) Devices
Ambient Temperature (TA) . . . . . . . . –55°C to +125°C
VCC Supply Voltages
VCC for regulated voltage range. . . . . .+3.0 V to 3.6 V
VCC for full voltage range . . . . . . . . . . .+2.7 V to 3.6 V
Operating ranges define those limits between which the functionality of the device is guaranteed.
25
Maximum Negative Overshoot Waveform
Am29LV116B
Maximum Positive Overshoot Waveform
PRELIMINARY
DC CHARACTERISTICS
CMOS Compatible
Parameter
Description
Test Conditions
Min
ILI
Input Load Current
VIN = VSS to VCC,
VCC = VCC max
ILIT
A9 Input Load Current
VCC = VCC max; A9 = 12.5 V
ILO
Output Leakage Current
VOUT = VSS to VCC,
VCC = VCC max
ICC1
VCC Active Read Current
(Note 1)
VCC = VCC max;
CE# = VIL, OE# = VIH
ICC2
VCC Active Write Current
(Notes 2 and 4)
ICC3
Typ
Max
Unit
±1.0
µA
35
µA
±1.0
µA
5 MHz
9
16
1 MHz
2
4
VCC = VCC max;
CE# = VIL, OE# = VIH
15
30
mA
VCC Standby Current
VCC = VCC max;
CE#, RESET# = VCC±0.3 V
0.2
5
µA
ICC4
VCC Reset Current
VCC = VCC max;
RESET# = VSS ± 0.3 V
0.2
5
µA
ICC5
Automatic Sleep Mode (Note 3)
VCC = VCC max; VIH = VCC ± 0.3 V;
VIL = VSS ± 0.3 V
0.2
5
µA
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
0.7 x VCC
VCC + 0.3
V
VID
Voltage for Autoselect and
Temporary Sector Unprotect
VCC = 3.3 V
11.5
12.5
V
VOL
Output Low Voltage
IOL = 4.0 mA, VCC = VCC min
0.45
V
VOH1
Output High Voltage
VOH2
VLKO
mA
IOH = –2.0 mA, VCC = VCC min
0.85 VCC
IOH = –100 µA, VCC = VCC min
VCC–0.4
Low VCC Lock-Out Voltage
(Note 4)
2.3
V
2.5
V
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. Typical specifications are for VCC = 3.0 V.
2. ICC active while Embedded Erase or Embedded Program is in progress.
3. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns.
4. Not 100% tested.
Am29LV116B
26
PRELIMINARY
DC CHARACTERISTICS (Continued)
Zero Power Flash
Supply Current in mA
25
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
3500
4000
Time in ns
Note: Addresses are switching at 1 MHz
21359C-12
Figure 9.
ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
10
3.6 V
Supply Current in mA
8
2.7 V
6
4
2
0
1
2
3
4
5
Frequency in MHz
Note: T = 25 °C
21359C-13
Figure 10.
27
Typical ICC1 vs. Frequency
Am29LV116B
PRELIMINARY
TEST CONDITIONS
Table 11.
Test Specifications
3.3 V
Test Condition
Output Load
2.7 kΩ
Device
Under
Test
80R
30
Input Rise and Fall Times
6.2 kΩ
100
pF
5
ns
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
Input Pulse Levels
Note: Diodes are IN3064 or equivalent
Unit
1 TTL gate
Output Load Capacitance, CL
(including jig capacitance)
CL
90, 120
21359C-14
Figure 11.
Test Setup
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
KS000010-PAL
3.0 V
Input
1.5 V
Measurement Level
1.5 V
Output
0.0 V
21359C-15
Figure 12.
Input Waveforms and Measurement Levels
Am29LV116B
28
PRELIMINARY
AC CHARACTERISTICS
Read Operations
Parameter
Speed Option
JEDEC
Std
Description
tAVAV
tRC
Read Cycle Time (Note 1)
tAVQV
tACC
Address to Output Delay
tELQV
tCE
Chip Enable to Output Delay
tGLQV
tOE
tEHQZ
tGHQZ
tAXQX
Test Setup
80R
90
120
Unit
Min
80
90
120
ns
CE# = VIL
OE# = VIL
Max
80
90
120
ns
OE# = VIL
Max
80
90
120
ns
Output Enable to Output Delay
Max
30
35
50
ns
tDF
Chip Enable to Output High Z (Note 1)
Max
25
30
30
ns
tDF
Output Enable to Output High Z (Note 1)
Max
25
30
30
ns
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
Min
0
ns
tOEH
Output Enable
Hold Time (Note 1)
tOH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First (Note 1)
Notes:
1. Not 100% tested.
2. See Figure 11 and Table 11 for test specifications.
tRC
Addresses Stable
Addresses
tACC
CE#
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0V
21359C-16
Figure 13.
29
Read Operations Timings
Am29LV116B
PRELIMINARY
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Description
Test Setup
All Speed Options
Unit
tREADY
RESET# Pin Low (During Embedded Algorithms)
to Read or Write (See Note)
Max
20
µs
tREADY
RESET# Pin Low (NOT During Embedded
Algorithms) to Read or Write (See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
RESET# High Time Before Read (See Note)
Min
50
ns
tRPD
RESET# Low to Standby Mode
Min
20
µs
tRB
RY/BY# Recovery Time
Min
0
ns
Note: Not 100% tested.
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
21359C-17
Figure 14.
RESET# Timings
Am29LV116B
30
PRELIMINARY
AC CHARACTERISTICS
Erase/Program Operations
Parameter
JEDEC
Std.
Description
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
tWLAX
tAH
Address Hold Time
Min
45
45
50
ns
tDVWH
tDS
Data Setup Time
Min
35
45
50
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time (Note 1)
Min
0
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
tWHWL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Programming Operation (Note 2)
Typ
9
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.7
sec
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tRB
Recovery Time from RY/BY#
Min
0
ns
Program/Erase Valid to RY/BY# Delay
Min
90
ns
tBUSY
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
31
Am29LV116B
80R
90
120
Unit
80
90
120
ns
0
35
35
ns
50
ns
PRELIMINARY
AC CHARACTERISTICS
Read Status Data (last two cycles)
Program Command Sequence (last two cycles)
tAS
tWC
Addresses
555h
PA
PA
PA
tAH
CE#
tCH
tGHWL
OE#
tWHWH1
tWP
WE#
tWPH
tCS
tDS
tDH
PD
A0h
Data
Status
DOUT
tBUSY
tRB
RY/BY#
tVCS
VCC
21359C-18
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
Figure 15.
Program Operation Timings
Erase Command Sequence (last two cycles)
tAS
tWC
2AAh
Addresses
Read Status Data
VA
SA
VA
555h for chip erase
tAH
CE#
tGHWL
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
In
Progress
30h
Complete
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCC
21359C-19
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).
Figure 16.
Chip/Sector Erase Operation Timings
Am29LV116B
32
PRELIMINARY
AC CHARACTERISTICS
tRC
Addresses
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
DQ0–DQ6
Status Data
Status Data
Valid Data
True
High Z
Valid Data
True
tBUSY
RY/BY#
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
21359C-20
Figure 17.
Data# Polling Timings (During Embedded Algorithms)
tRC
Addresses
VA
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ6/DQ2
tBUSY
Valid Status
Valid Status
(first read)
(second read)
Valid Status
Valid Data
(stops toggling)
RY/BY#
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle.
21359C-21
Figure 18.
33
Toggle Bit Timings (During Embedded Algorithms)
Am29LV116B
PRELIMINARY
AC CHARACTERISTICS
Enter
Embedded
Erasing
Erase
Suspend
Erase
WE#
Enter Erase
Suspend Program
Erase
Suspend
Program
Erase Suspend
Read
Erase
Resume
Erase
Erase Suspend
Read
Erase
Complete
DQ6
DQ2
Note: The system can use OE# or CE# to toggle DQ2/DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
21359C-22
Figure 19.
DQ2 vs. DQ6
Temporary Sector Unprotect
Parameter
JEDEC
Std.
Description
tVIDR
VID Rise and Fall Time (See Note)
tRSP
RESET# Setup Time for Temporary Sector
Unprotect
All Speed Options
Unit
Min
500
ns
Min
4
µs
Note: Not 100% tested.
12 V
RESET#
0 or 3 V
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRSP
RY/BY#
21359C-23
Figure 20.
Temporary Sector Unprotect Timing Diagram
Am29LV116B
34
PRELIMINARY
AC CHARACTERISTICS
VID
VIH
RESET#
SA, A6,
A1, A0
Valid*
Valid*
Sector Protect/Unprotect
Data
60h
Valid*
Verify
60h
40h
Status
Sector Protect: 100 µs
Sector Unprotect: 10 ms
1 µs
CE#
WE#
OE#
Note: For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.
21359C-24
Figure 21.
35
Sector Protect/Unprotect Timing Diagram
Am29LV116B
PRELIMINARY
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Parameter
JEDEC
Std.
Description
80R
90
120
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
80
90
120
ns
tAVEL
tAS
Address Setup Time
Min
tELAX
tAH
Address Hold Time
Min
45
45
50
ns
tDVEH
tDS
Data Setup Time
Min
35
45
50
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
tEHEL
tCPH
CE# Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Programming Operation (Note 2)
Typ
9
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.7
sec
0
35
35
ns
50
ns
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
Am29LV116B
36
PRELIMINARY
AC CHARACTERISTICS
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tWHWH1 or 2
tCP
CE#
tWS
tCPH
tBUSY
tDS
tDH
DQ7#
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Note: PA = program address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data written to
the device. Figure indicates the last two bus cycles of the command sequence.
21359C-25
Figure 22.
37
Alternate CE# Controlled Write Operation Timings
Am29LV116B
PRELIMINARY
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Sector Erase Time
0.7
15
s
Chip Erase Time
25
Byte Programming Time
9
300
µs
Chip Programming Time (Note 3)
18
54
s
s
Comments
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four- or two-bus-cycle sequence for the program command. See
Table 9 for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles per sector.
LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
–100 mA
+100 mA
VCC Current
Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
TSOP PIN CAPACITANCE
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
Minimum Pattern Data Retention Time
Am29LV116B
38
PRELIMINARY
PHYSICAL DIMENSIONS*
TS 040—40-Pin Standard TSOP (measured in millimeters)
0.95
1.05
Pin 1 I.D.
1
40
9.90
10.10
0.50 BSC
20
21
0.05
0.15
18.30
18.50
19.80
20.20
0.08
0.20
0.10
0.21
1.20
MAX
0˚
5˚
0.25MM (0.0098") BSC
16-038-TSOP-1_AC
TS 040
4-25-96 lv
0.50
0.70
* For reference only. BSC is an ANSI standard for Basic Space Centering.
TSR040—40-Pin Reverse TSOP (measured in millimeters)
1.05
Pin 1 I.D.
1
40
9.90
10.10
0.50 BSC
20
21
0.05
0.15
18.30
18.50
19.80
20.20
0.08
0.20
0.10
0.21
1.20
MAX
0.25MM (0.0098") BSC
0˚
5˚
0.50
0.70
* For reference only. BSC is an ANSI standard for Basic Space Centering.
39
Am29LV116B
16-038-TSOP-1_AC
TSR040
4-25-96 lv
PRELIMINARY
REVISION SUMMARY
Revision B
AC Characteristics
Global
Erase/Program Operations; Alternate CE# Controlled
Erase/Program Operations: Corrected the notes reference for tWHWH1 and tWHWH2. These parameters are
100% tested. Corrected the note reference for tVCS.
This parameter is not 100% tested.
Deleted SO package from data sheet.
Revision C
Alternate CE# Controlled Erase/Program
Operations
Temporary Sector Unprotect Table
Changed tCP from 45 to 35 ns on 80R and 90 speed
options.
Added note reference for tVIDR. This parameter is not
100% tested.
Revision C+1
Figure 21, Sector Protect/Unprotect Timing
Diagram
Global
Changed data sheet status to Preliminary.
A valid address is not required for the first write cycle;
only the data 60h.
Reset Command
Erase and Programming Performance
Deleted the last paragraph in this section.
In Note 2, the worst case endurance is now 1 million
cycles.
Revision C+2
Figure 1, In-System Sector Protect/Unprotect
Algorithms
In the sector protect algorithm, added a “Reset
PLSCNT=1” box in the path from “Protect another sector?” back to setting up the next sector address.
Trademarks
Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
Am29LV116B
40