Ordering number:EN3960 FP101 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions · Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating high-density mounting. · The FP101 is formed with 2chips, one being equivalent to the 2SB1121 and the other the SB05-05CP, placed in one package. unit:mm 2088A [FP101] 1:Base 2:Common 3:Emitter 4:Common 5:Anode 6:Common 7:Common (Common:Collcector, Cathode) SANYO:PCP4 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit [TR] Collector-to-Base Voltage VCBO VCEO –30 V Collector-to-Emitter Voltage –25 V Emitter-to-Base Voltage VEBO –6 V IC –2 A I CP –5 Collector Current Collector Current (Pulse) –400 A Base Current IB Collector Dissipation PC 1.3 W Junction Temperature Tj 150 ˚C VRRM VRSM 50 V 55 V IO 500 mA Mounted on ceramic board (250mm2×0.8mm) mA [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current IFSM Junction Temperature Tj Storage Temperature Tstg Marking:101 Electrical Connection 50Hz sine wave, 1cycle 5 A –55 to +125 ˚C –55 to +125 ˚C Continued on next page. 1:Base 2:Common 3:Emitter 4:Common 5:Anode 6:Common 7:Common (Common:Collcector, Cathode) (Top view) SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/62094MT (KOTO) AX-8060 No.3960-1/4 FP101 Continued from preceding page. Electrical Characteristics at Ta=25˚C Parameter Symbol Conditons Ratings min typ max Unit [TR] Collector Cutoff Current ICBO Emitter Cutoff Current IEBO hFE1 DC Current Gain hFE2 Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage fT VCE=–2V, IC=–100mA VCE=–2V, IC=–1.5A 140 –0.1 µA –0.1 µA 560 65 VCE=–10V, IC=–50mA 150 MHz Cob VCB=–10V, f=1MHz VCE(sat) VBE(sat) IC=–1.5A, IB=–75mA –0.35 –0.6 IC=–1.5A, IB=–75mA –0.85 –1.2 V(BR)CBO IC=–10µA, IE=0 V(BR)CEO IC=–1mA, RBE=∞ Turn-ON Time V(BR)EBO ton Storage Time Fall Time VCB=–20V, IE=0 VEB=–4V, IC=0 IE=–10µA, IC=0 32 pF V V –30 V –25 V –6 V See specified Test Circuit 60 ns tstg See specified Test Circuit 350 ns tf See specified Test Circuit 25 ns [SBD] Reverse Voltage VR Forward Voltage VF IR Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance C trr Rthj-a IR=200µA IF=500mA 50 V VR=25V VR=10V, f=1MHz V 50 µA 22 IF=IR=100mA, See specified Test Circuit Mounted on ceramic board (250mm2×0.8mm) 0.55 pF 10 120 ns ˚C/W Switching Time Test Circuit (TR) (SBD) No.3960-2/4 FP101 No.3960-3/4