Sanyo FP101 Dc-dc converter application Datasheet

Ordering number:EN3960
FP101
PNP Epitaxial Planar Silicon Transistor/
Composite Schottky Barrier Diode
DC-DC Converter Applications
Features
Package Dimensions
· Composite type with a PNP transistor and a Shottky
barrier diode contained in one package, facilitating
high-density mounting.
· The FP101 is formed with 2chips, one being equivalent to the 2SB1121 and the other the SB05-05CP,
placed in one package.
unit:mm
2088A
[FP101]
1:Base
2:Common
3:Emitter
4:Common
5:Anode
6:Common
7:Common
(Common:Collcector,
Cathode)
SANYO:PCP4
(Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
[TR]
Collector-to-Base Voltage
VCBO
VCEO
–30
V
Collector-to-Emitter Voltage
–25
V
Emitter-to-Base Voltage
VEBO
–6
V
IC
–2
A
I CP
–5
Collector Current
Collector Current (Pulse)
–400
A
Base Current
IB
Collector Dissipation
PC
1.3
W
Junction Temperature
Tj
150
˚C
VRRM
VRSM
50
V
55
V
IO
500
mA
Mounted on ceramic board (250mm2×0.8mm)
mA
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Rectified Current
Surge Forward Current
IFSM
Junction Temperature
Tj
Storage Temperature
Tstg
Marking:101
Electrical Connection
50Hz sine wave, 1cycle
5
A
–55 to +125
˚C
–55 to +125
˚C
Continued on next page.
1:Base
2:Common
3:Emitter
4:Common
5:Anode
6:Common
7:Common
(Common:Collcector, Cathode)
(Top view)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/62094MT (KOTO) AX-8060 No.3960-1/4
FP101
Continued from preceding page.
Electrical Characteristics at Ta=25˚C
Parameter
Symbol
Conditons
Ratings
min
typ
max
Unit
[TR]
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
hFE1
DC Current Gain
hFE2
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
fT
VCE=–2V, IC=–100mA
VCE=–2V, IC=–1.5A
140
–0.1
µA
–0.1
µA
560
65
VCE=–10V, IC=–50mA
150
MHz
Cob
VCB=–10V, f=1MHz
VCE(sat)
VBE(sat)
IC=–1.5A, IB=–75mA
–0.35
–0.6
IC=–1.5A, IB=–75mA
–0.85
–1.2
V(BR)CBO IC=–10µA, IE=0
V(BR)CEO IC=–1mA, RBE=∞
Turn-ON Time
V(BR)EBO
ton
Storage Time
Fall Time
VCB=–20V, IE=0
VEB=–4V, IC=0
IE=–10µA, IC=0
32
pF
V
V
–30
V
–25
V
–6
V
See specified Test Circuit
60
ns
tstg
See specified Test Circuit
350
ns
tf
See specified Test Circuit
25
ns
[SBD]
Reverse Voltage
VR
Forward Voltage
VF
IR
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
C
trr
Rthj-a
IR=200µA
IF=500mA
50
V
VR=25V
VR=10V, f=1MHz
V
50
µA
22
IF=IR=100mA, See specified Test Circuit
Mounted on ceramic board (250mm2×0.8mm)
0.55
pF
10
120
ns
˚C/W
Switching Time Test Circuit
(TR)
(SBD)
No.3960-2/4
FP101
No.3960-3/4
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