N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H5342 █ APPLICATIONS Medium power amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature………………………… -55~150℃ TO-92 Tj——Juncttion Temperature…………………………………150℃ PC——Collector Dissipation…………………………………625mW VCBO——Collector-Base Voltage………………………………40V 1―Emitter，E 2―Collector，C 3―Base，B VCEO——Collector-Emitter Voltage……………………………32V V EB O ——Emitter-Base Voltage………………………………5V IC——Collector Current………………………………………500mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 40 V IC=100μA，IE=0 BVCEO Collector-Emitter Breakdown Voltage 32 V IC=1mA，IB=0 BVEBO Emitter- Base Breakdown Voltage 5 V IE=10μA，IC=0 ICBO Collector Cut-off Current 0.1 μA VCB=40V, IE=0 IEBO Emitter Cut-off Current 0.1 μA VEB=5V, IC=0 HFE DC Current Gain 70 240 VCE(sat） Collector- Emitter Saturation Voltage VCE=1V, IC=100mA 0.25 V fT Current Gain-Bandwidth Product 300 MHz Cob Output Capacacitance 7.0 pF █ hFE Classification O Y 70—140 120—240 IC=100mA, IB=10mA VCE=6V, IE=-20mA VCB=6V,IE=0，f=1MHz Shantou Huashan Electronic Devices Co.,Ltd. H5342