Z ibo Seno Electronic Engineering Co., Ltd. DF005 – DF10 1.0A PASSIVATED BRIDGE RECTIFIER Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Surge Current Capability Designed for Surface Mount Application Plastic Material – UL Recognition Flammability Classification 94V-O DIP A C B D E G Mechanical Data ! H K L J M Case: D I P , Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: As Marked on Case Weight: 1.0 grams (approx.) Mounting Position: Any Marking: Type Number Lead Free: For RoHS / Lead Free Version Dim Min Max A 6.20 6.50 B 6.80 8.40 C 7.24 8.70 D 0.20 0.38 E 8.12 8.80 G 2.15 3.40 H 1.30 - J 3.80 4.90 K 0.90 1.40 L 0.45 0.58 M 5.00 5.20 All Dimensions in mm Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TA = 40°C DF005 DB01 DF02 DF04 DF06 DF08 DF10 Unit VRRM VRWM VR 50 100 200 400 600 800 1000 V VR(RMS) 35 70 140 280 420 560 700 V IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 50 A Forward Voltage per element @IF = 1.0A VFM 1.1 V @TA = 25°C @TA = 125°C IRM 5.0 500 µA Cj 25 pF Typical Thermal Resistance per leg (Note 2) RθJA RθJL 40 15 °C/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Peak Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance per element (Note 1) Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 2. Mounted on PC board with 13mm2 copper pad. DF005 - DF10 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. DF005 – DF10 10 60 Hz Resistive or Inductive load IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FORWARD CURRENT (A) 1.0 0.5 0 40 60 100 80 120 140 Tj = 25°C Pulse Width = 300µs 2% duty cycle 1.0 0.1 0.01 0.4 1.0 1.4 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typ Forward Characteristics (per element) 60 100 Tj = 25°c f = 1.0 Mhz Vsig = 50 mV p-p Single half-sine-Wave (JEDEC M ethod) 50 CJ, CAPACITANCE (pF) IFSM , PEAK FORWARD SURGE CURRENT (A) TA, AMBIENT TEMPERATURE (°C) Fig. 1 Output Current Derating Curve 0.8 0.6 40 30 20 10 10 0 1 1 10 10 1 100 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typ Junction Capacitance (per element) NUM BER OF CYCLES AT 60 Hz Fig. 3 M ax Non-Repetitive Peak Forward Surge Current IR, INSTANTANEOUS REVERSE CURRENT (µA) 100 Tj = 125°C 10 1.0 Tj = 25°C 0.1 0.01 0 20 40 60 100 120 140 80 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typ Reverse Characteristics (per element) DF005 - DF10 2 of 2 www.senocn.com Alldatasheet