JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT2222AT TRANSISTOR (NPN) FEATURES z Complementary to MMBT2907AT z Small Package SOT–523 MARKING:1P MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V 1. BASE VCEO Collector-Emitter Voltage 40 V 2. EMITTER VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 150 mW Thermal Resistance from Junction to Ambient 833 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit = V(BR)CBO IC=10µA, IE 0 75 V V(BR)CEO IC=10mA, IB 0 Collector-emitter breakdown voltage = 40 V = V(BR)EBO IE=10µA, IC 0 6 V Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current ICEX = VCE=60V, VEB(off) 3V h= VCE=10V, IC 0.1mA FE(1) = hFE(2) VCE=10V, IC 1mA DC current gain 10 nA 35 50 h= VCE=10V, IC 10mA FE(3) 75 hFE(4) = VCE=10V, IC 150mA 100 hFE(5) = VCE=10V, IC 500mA 40 300 Collector-emitter saturation voltage IC=150mA, IB= 15mA VCE(sat) = IC=500mA, IB 50mA 0.3 V 1 V Collector-emitter saturation voltage IC=150mA, IB= 15mA VBE(sat) = IC=500mA, IB 50mA 1.2 V 2 V Transition frequency Collector output capacitance fT Cob VCE=20V,IC=20mA, f=100MHz VCB=10V, IE=0, f=1MHz VCC=30V, VBE(off)=-0.5V IC=150mA, 300 MHz 8 pF 10 ns 25 ns Delay time td Rise time tr Storage time ts VCC=30V, IC=150mA, I= B1=IB2 15mA 225 ns Fall time tf VCC=30V, IC=150mA, IB1= IB2= 15mA 60 ns www.cj-elec.com IB1=15mA VCC=30V, VBE(off)=-0.5V IC=150mA, IB1=15mA 1 E,Mar,2016 B,Mar,2012 C,Mar,2012 Typical Characteristics 500 0.9mA 0.20 400 0.8mA hFE 0.7mA IC 0.6mA 0.15 DC CURRENT GAIN (A) COMMON EMITTER VCE=10V 1mA COMMON EMITTER Ta=25℃ COLLECTOR CURRENT —— IC hFE Static Characteristic 0.25 0.5mA 0.10 0.4mA 0.3mA 0.05 Ta=100℃ 300 200 Ta=25℃ 100 0.2mA IB=0.1mA 0.00 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VCEsat 0.5 —— 10 VCE 0 0.1 12 1 (V) 10 100 COLLECTOR CURRENT IC VBEsat 1.2 IC 600 (mA) —— IC 0.4 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) β=10 0.3 0.2 Ta=100℃ 0.1 Ta=25℃ Ta=25℃ 0.8 Ta=100℃ 0.4 β=10 0.0 0.0 1 10 100 COLLECTOR CURRENT IC IC 1 600 10 (mA) 100 COLLECTOR CURRENT —— VBE Cob/ Cib 100 600 IC —— VCB/ VEB f=1MHz IE=0/ IC=0 Ta=25℃ Cib (pF) 100 IC (mA) COMMON EMITTER VCE=10V C Ta=100℃ 10 CAPACITANCE COLLECTOR CURRENT 600 (mA) Ta=25℃ 1 0.1 0.0 0.2 0.4 0.6 0.8 Cob 10 1 0.1 1.0 1 BASE-EMMITER VOLTAGE VBE (V) 500 fT 10 REVERSE VOLTAGE —— IC Pc 200 —— V 20 (V) Ta COMMON EMITTER VCE=20V TRANSTION FREQUENCY fT COLLECTOR POWER DISSIPATION Pc (mW) (MHz) Ta=25℃ 100 10 100 50 0 0 80 COLLECTOR CURRENT www.cj-elec.com 150 IC (mA) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃) E,Mar,2016 B,Mar,2012 C,Mar,2012 SOT-523 Package Outline Dimensions Symbol A A1 A2 b1 b2 c D E E1 e e1 L L1 θ Dimensions In Millimeters Max. Min. 0.700 0.900 0.000 0.100 0.700 0.800 0.150 0.250 0.250 0.350 0.100 0.200 1.500 1.700 0.700 0.900 1.450 1.750 0.500 TYP. 0.900 1.100 0.400 REF. 0.260 0.460 0° 8° Dimensions In Inches Min. Max. 0.028 0.035 0.000 0.004 0.028 0.031 0.006 0.010 0.010 0.014 0.004 0.008 0.059 0.067 0.028 0.035 0.057 0.069 0.020 TYP. 0.035 0.043 0.016 REF. 0.010 0.018 0° 8° SOT-523 Suggested Pad Layout www.cj-elec.com 3 E,Mar,2016 B,Mar,2012 C,Mar,2012 SOT-523 Tape and Reel www.cj-elec.com 4 E,Mar,2016 B,Mar,2012 C,Mar,2012