ON NCP1403 15 v/50 ma pfm step−up dc−dc converter Datasheet

NCP1403
15 V/50 mA PFM Step−Up
DC−DC Converter
The NCP1403 is a monolithic PFM step−up DC−DC converter. This
device is designed to boost a single Lithium or two cell AA/AAA
battery voltage up to 15 V (with internal MOSFET) output for
handheld applications. A pullup Chip Enable feature is built with this
device to extend battery−operating life. Besides, the device can also be
incorporated in step−down, and voltage−inverting configurations.
This device is available in space−saving TSOP−5 package.
http://onsemi.com
5
1
Features
82% Efficiency at VOUT = 15 V, IOUT = 50 mA, VIN = 5.0 V
78% Efficiency at VOUT = 15 V, IOUT = 30 mA, VIN = 3.6 V
Low Operating Current of 19 mA (No Switching)
Low Shutdown Current of 0.3 mA
Low Startup Voltage of 1.3 V Typical at 0 mA
Output Voltage up to 15 V with Built−in 16 V MOSFET Switch
PFM Switching Frequency up to 300 kHz
Chip Enable
Low Profile and Minimum External Parts
Micro Miniature TSOP−5 Package
Pb−Free Package is Available
TSOP−5
SN SUFFIX
CASE 483
MARKING DIAGRAM AND
PIN CONNECTIONS
CE
1
FB
2
VDD
3
Typical Applications
•
•
•
•
•
DCEAYWG
G
•
•
•
•
•
•
•
•
•
•
•
5
LX
4
GND
(Top View)
LCD Bias
Personal Digital Assistants (PDA)
Digital Still Camera
Handheld Games
Hand−held Instrument
DCE =Specific Device Marking
A
= Assembly Location
Y
= Year
W = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NCP1403SNT1
NCP1403SNT1G
Package
Shipping†
TSOP−5
3000/Tape & Reel
TSOP−5
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 6
1
Publication Order Number:
NCP1403/D
NCP1403
L
47 mH
D
MBR0520LT1
VOUT
15 V
VIN
1.8 V to 5.5 V
CE
1
+
C1
10 mF
LX
5
FB
2
750 pF to
2000 pF CC
NCP1403
VDD
3
Enable
+
GND
4
C2
33
mF
RFB1
RFB2
ǒ
Ǔ
R
VOUT + 0.8 FB1 ) 1
RFB2
Figure 1. Typical Step−Up Application Circuit 1
L
22 mH
D
MBR0520LT1
VIN
2.7 V to 5.5 V
CE
1
C1
4.7 mF
10 V
FB
2
LX
5
NCP1403
White LED x 4
VDD
3
Enable
C2
2.2 mF
16 V
ZD
GND
4
ILED + 0.8 V
RS
RS
Figure 2. Typical Step−Up Application Circuit 2
LX
VDD
VLx Limit
UVLO
Soft Start
PFM
Comparator
PFM ON/OFF
Timing Control
−
FB
+
Driver
Vref
CE
Figure 3. Representative Block Diagram
http://onsemi.com
2
GND
NCP1403
PIN FUNCTION DESCRIPTIONS
Pin
Symbol
Description
1
CE
Chip Enable Pin
1. The chip is enabled if a voltage which is equal to or greater than 0.9 V is applied.
2. The chip is disabled if a voltage which is less than 0.3 V is applied.
3. The chip will be enabled if it is left floating.
2
FB
PFM comparator inverting input, and is connected to off−chip resistor divider which sets output voltage.
3
VDD
Power supply pin for internal circuit.
4
GND
Ground pin.
5
LX
External inductor connection pin.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Power Supply Voltage (Pin 3)
VDD
−0.3 to 6.0
V
Input/Output Pin
LX (Pin 5)
LX Peak Sink Current
FB (Pin 2)
VLX
ILX
VFB
−0.3 to 16.0
600
−0.3 to 6.0
V
mA
V
CE (Pin 1)
Input Voltage Range
Input Current Range
VCE
ICE
−0.3 to 6.0
150
V
mA
Power Dissipation and Thermal Characteristics
Maximum Power Dissipation @ TA = 25°C
Thermal Resistance Junction−to−Air
PD
RqJA
500
250
mW
°C/W
Operating Ambient Temperature Range
TA
−40 to +85
°C
Operating Junction Temperature Range
TJ
−40 to +150
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. This device series contains ESD protection and exceeds the following tests:
Human Body Model (HBM) "2.0 kV per JEDEC standard: JESD22−A114 for all pins except LX pin.
Human Body Model (HBM) "1.5 kV for LX pin.
Machine Model (MM) "200 V per JEDEC standard: JESD22−A115 for all pins.
2. Latchup Current Maximum Rating: "150 mA per JEDEC standard: JESD78.
3. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020A.
http://onsemi.com
3
NCP1403
ELECTRICAL CHARACTERISTICS (VOUT = 15 V, TA =25°C, for min/max values unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Minimum Off Time (VDD = 3.0 V, VFB = 0 V)
toff
0.8
1.3
1.5
ms
Maximum On Time (Current not asserted)
ton
4.0
6.0
8.4
ms
Maximum Duty Cycle
DMAX
75
83
91
%
Minimum Startup Voltage (IOUT = 0 mA)
Vstart
−
1.3
1.8
V
DVstart
−
1.6
−
mV/°C
Vhold
−
1.2
1.7
V
tSS
0.5
10
−
ms
Internal Switch Voltage (Note 4)
VLX
0.5
−
16
V
LX Pin On−State Sink Current (VLX = 0.4 V, VDD = 3.0 V)
ILX
100
130
−
mA
VLXLIM
0.55
0.75
1.0
V
ILKG
−
0.1
1.0
mA
CE Input Voltage (VDD = 3.0 V, VFB = 0 V)
High State, Device Enabled
Low State, Device Enabled
VCE(high)
VCE(low)
0.9
−
−
−
−
0.3
V
V
CE Input Current
High State, Device Enabled (VDD = VCE = 5.5 V)
Low State, Device Enabled (VDD = 5.5 V, VCE = VFB = 0 V)
ICE(high)
ICE(low)
−0.5
−0.5
0
−0.1
0.5
0.5
mA
mA
ON/OFF TIMING CONTROL
Minimum Startup Voltage Temperature Coefficient (TA = −40 to +85°C)
Minimum Supply Voltage (IOUT = 0 mA)
Soft−Start Time
LX (PIN 5)
Voltage Limit (When VLX reaches VLXLIM, the LX switch is turned off by the LX
switch protection circuit)
Off−State Leakage Current (VLX = 16 V)
CE (PIN 1)
TOTAL DEVICE
Supply Voltage
VDD
1.2
−
5.5
V
Feedback Voltage
VFB
0.76
0.8
0.84
V
Feedback Pin Bias Current (VFB = 0.8 V)
IFB
−
15
30
nA
Operating Current 1 (VFB = 0 V, VDD = VCE = 3.0 V)
IDD1
−
130
200
mA
Operating Current 2 (VDD = VCE = VFB = 3.0 V, Not switching)
IDD2
−
19
25
mA
Off−state Current (VDD = 5.0 V, VCE = 0 V, internal 100 nA pullup current source)
IOFF
−
0.3
0.8
mA
4. Recommend maximum VOUT up to 15 V.
http://onsemi.com
4
NCP1403
TYPICAL CHARACTERISTICS
100
L = 47 mH
VOUT = 15 V
COUT = 33 mF
TA = 25°C
Figure 1
16.5
16.0
15.5
Vin = 5.5 V
80
VIN = 5.5
V
15.0
14.5
EFFICIENCY (%)
VOUT, OUTPUT VOLTAGE (V)
17.0
3.6 V
1.8 V 2.4 V
4.0 V
5.0 V
3.0 V
14.0
L = 47 mH
VOUT = 15 V
COUT = 33 mF
TA = 25°C
Figure 1
40
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
IOUT, OUTPUT CURRENT (mA)
IOUT, OUTPUT CURRENT (mA)
Figure 4. Output Voltage versus Output
Current (VOUT = 15 V)
Figure 5. Efficiency versus Output Current
(VOUT = 15 V)
80
100
14.0
L = 47 mH
VOUT = 12 V
COUT = 33 mF
TA = 25°C
Figure 1
13.5
13.0
12.5
80
EFFICIENCY (%)
VOUT, OUTPUT VOLTAGE (V)
1.8 V
20
0
VIN = 5.5
V
12.0
5.0 V
11.5
4.0 V
3.6 V
11.0
10.5
5.0 V
4.0 V
13.5
13.0
3.0 V
2.4 V
VIN = 5.5
V
5.0 V
4.0 V
3.6 V
1.8 V
60
L = 47 mH
VOUT = 12 V
COUT = 33 mF
TA = 25°C
Figure 1
40
3.0 V
2.4 V
1.8 V
20
10.0
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
80
70
IOUT, OUTPUT CURRENT (mA)
IOUT, OUTPUT CURRENT (mA)
Figure 6. Output Voltage versus Output
Current (VOUT = 12 V)
Figure 7. Efficiency versus Output Current
(VOUT = 12 V)
12.4
VOUT, OUTPUT VOLTAGE (V)
15.4
VOUT, OUTPUT VOLTAGE (V)
2.4 V
60
3.6 V
3.0 V
15.2
IOUT = 5 mA
15.0
IOUT = 0 mA
14.8
L = 47 mH
VOUT = 15 V
COUT = 33 mF
TA = 25°C
Figure 1
14.6
14.4
12.2
IOUT = 5 mA
12.0
IOUT = 0 mA
L = 47 mH
VOUT = 12 V
COUT = 33 mF
TA = 25°C
Figure 1
11.8
11.6
11.4
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Vin, INPUT VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
Figure 8. Output Voltage versus Input Voltage
(VOUT = 15 V)
Figure 9. Output Voltage versus Input Voltage
(VOUT = 12 V)
http://onsemi.com
5
NCP1403
TYPICAL CHARACTERISTICS
600
800
700
600
500
400
300
200
100
0
2
3
4
5
400
300
200
100
TA = 25°C
1
6
2
3
4
5
6
VIN, INPUT VOLTAGE (V)
VIN, INPUT VOLTAGE (V)
Figure 10. No Load Input Current versus
Input Voltage
Figure 11. Current Limit versus Input Voltage
6
VOUT = 15 V
TA = 25°C
5
4
3
2
1
1
2
3
4
5
6
5.0
VOUT = 15 V
L = 47 mH
COUT = 33 mF
TA = 25°C
Figure 1
4.5
4.0
3.5
VSTART
3.0
VHOLD
2.5
2.0
1.5
1.0
0.5
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30
VIN, INPUT VOLTAGE (V)
IOUT, OUTPUT CURRENT (mA)
Figure 12. Switch−On Resistance versus Input
Voltage
Figure 13. Startup/Hold Voltage versus Output
Current
100
DMAX, MAXIMUM DUTY CYCLE (%)
0.84
VFB, FEEDBACK VOLTAGE (V)
500
0
1
RDS(on), SWITCH−ON RESISTANCE (W)
ILIM, CURRENT LIMIT (mA)
VOUT = 15 V
L = 47 mH
D = MBR0520LT1
CIN = 10 mF
COUT = 33 mF
IOUT = 0 mA
TA = 25°C
Figure 1
900
VSTART/VHOLD, STARTUP/HOLD VOLTAGE (V)
IIN, NO LOAD INPUT CURRENT (mA)
1000
0.82
0.80
0.78
0.76
0.74
−50
−25
0
25
50
75
90
80
70
60
50
−50
100
−25
0
25
50
75
TA, AMBIENT TEMPERATURE(°C)
TA, AMBIENT TEMPERATURE (°C)
Figure 14. Feedback Voltage versus Ambient
Temperature
Figure 15. Maximum Duty Cycle versus
Ambient Temperature
http://onsemi.com
6
100
NCP1403
9
toff, MINIMUM SWITCH OFF TIME (ms)
ton, MAXIMUM SWITCH ON TIME (ms)
TYPICAL CHARACTERISTICS
8
7
6
5
4
−50
−25
0
25
50
75
100
3
2
1
0
−50
−25
0
25
50
75
TA, AMBIENT TEMPERATURE (°C)
Figure 16. Maximum Switch On Time
Figure 17. Minimum Switch Off Time
100
IDD2, OPERATING CURRENT 2 (mA)
25
150
130
110
VDD = VCE = 3.0 V
90
VFB = 0 V
70
−50
−25
0
25
50
75
21
19
VDD = VCE = 3.0 V
VFB = 3.0 V
NOT SWITCHING
17
−25
0
25
50
75
TA, AMBIENT TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Figure 18. Operating Current 1 versus
Ambient Temperature
Figure 19. Operating Current 2 versus
Ambient Temperature
1
0.8
0.6
0.4
VDD = 5.0 V
0.2
VCE = 0 V
0
−50
23
15
−50
100
ICE(high), CE HIGH INPUT CURRENT (nA)
IDD1, OPERATING CURRENT 1 (mA)
4
TA, AMBIENT TEMPERATURE (°C)
170
Ioff, OFF−STATE CURRENT (mA)
5
−25
0
25
50
75
100
25
15
5
−5
VDD = 5.5 V
−15
−25
−50
VCE = 5.5 V
−25
0
25
50
75
TA, AMBIENT TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Figure 20. Off−State Current versus Ambient
Temperature
Figure 21. CE High Input Current versus
Ambient Temperature
http://onsemi.com
7
100
100
NCP1403
TYPICAL CHARACTERISTICS
L = 47 mH, CIN = 10 mF, COUT = 33 mF, IOUT = 20 mA
1. VOUT = 15 V, 10 V/div
2. VLX, 10 V/div
3. VIN = 0 V to 3.6 V, 5 V/div
L = 47 mH, CIN = 10 mF, COUT = 33 mF, VIN = 3.6 V, IOUT = 20
mA
1. VOUT = 15 V, 10 V/div
2. VLX, 10 V/div
3. VCE = 0 V Figure
to 3.3 V,23.
5 V/div
Chip Enable Waveforms
Figure 22. Startup Waveforms
L = 47 mH, CIN = 10 mF, COUT = 33 mF, VIN = 3.6 V
1. VOUT = 15 V (AC Coupled), 50 mV/div
2. IOUT = 1.0 mA to 15 mA, 10 mA/div
L = 47 mH, CIN = 10 mF, COUT = 33 mF, IOUT = 10 mA
1. VOUT = 15 V (AC Coupled), 100 mV/div
2. VIN = 3.6 V to 5.5 V, 2.0 V/div
Figure 24. Line Transient Response
Figure 25. Load Transient Response
L = 47 mH, CIN = 10 mF, COUT = 33 mF, VIN = 3.6 V, VOUT = 15
V, IOUT = 30 mA
1. VLX, 5.0 V/div
2. IL, 200 mA/div
3. Vripple, 50 mV/div
L = 47 mH, CIN = 10 mF, COUT = 33 mF, VIN = 3.6 V, VOUT = 15
V, IOUT = 10 mA
1. VLX, 5.0 V/div
2. IL, 200 mA/div
3. Vripple, 50 mV/div
Figure 26. Operating Waveforms (Medium Load)
Figure 27. Operating Waveforms (Heavy Load)
http://onsemi.com
8
NCP1403
DETAILED OPERATING DESCRIPTION
Voltage Reference and Output Voltage
The internal voltage reference is trimmed to 0.8 V at an
accuracy of ±5.0%. The voltage reference is connected to the
non−inverting input of the PFM comparator and the
inverting input of the PFM comparator is connected to the
FB pin. The output voltage can be set by connected an
external resistor voltage divider from the VOUT to the
FB pin. With the internal 16 V MOSFET switch, the output
voltage can be set between VIN to 15 V.
Operation
The NCP1403 is monolithic DC−DC switching converter
optimized for single Lithium or two cells AA/AAA size
batteries powered portable products.
The NCP1403 device consists of startup circuit, chip
enable circuit, PFM comparator, voltage reference, PFM
on/off timing control circuit, driver, current limit circuit, and
open−drain MOSFET switch. The device operating current
is typically 130 mA, and can be further reduced to about 0.3
mA when the chip is disabled (VCE < 0.3 V).
The operation of NCP1403 can be best understood by
referring to the block diagram and typical application circuit
1 in Figures 3 and 1. The PFM comparator monitors the
output voltage via the external feedback resistor divider by
comparing the feedback voltage with the reference voltage.
When the feedback voltage is lower than the reference
voltage, the PFM control and driver circuit turns on the
N−Channel MOSFET switch and the current ramps up in the
inductor. The switch will remain on for the maximum
on−time, 6.0 ms, or until the current limit is reached,
whichever occurs first. The MOSFET switch is then turned
off and energy stored in the inductor will be discharged to the
output capacitor and load through the Schottky diode. The
MOSFET switch will be turned off for at least the minimum
off−time, 1.3 ms, and will remain off if the feedback voltage
is higher than the reference voltage and output capacitor will
be discharged to sustain the output current, until the
feedback voltage is again lower than reference voltage. This
switching cycle is then repeated to attain voltage regulation.
LX Limit
The LX Limit is a current limit feature which is achieved
by monitoring the voltage at the LX pin during the MOSFET
switch turn−on period. When the switch is turned on, current
ramps up in the inductor, and the voltage at the LX pin will
increase according to the Ohm’s Law due to the On−state
resistance of the MOSFET. When the VLX is greater than
0.75 V, the switch will be turned off. With the current limit
circuit, saturation of inductor is prevented and output
voltage overshoot during startup can also be minimized.
N−Channel MOSFET Switch
The NCP1403 is built−in with a 16 V open drain
N−Channel MOSFET switch which allows high output
voltage up to 15 V to be generated from simple step−up
topology.
Enable / Disable Operation
The NCP1403 offers IC shut−down mode by the chip
enable pin (CE pin) to reduce current consumption. An
internal 100 nA pullup current source tied the CE pin to
OUT pin by default i.e. user can float the pin CE for
permanent “ON”. When voltage at pin CE is equal to or
greater than 0.9 V, the chip will be enabled, which means the
device is in normal operation. When voltage at pin CE is less
than 0.3 V, the chip is disabled, which means IC is shutdown.
During shutdown, the IC supply current reduces to 0.3 mA
and LX pin enters high impedance state. However, the input
remains connected to the output through the inductor and the
Schottky diode, keeping the output voltage to one diode
forward voltage drop below the input voltage.
Soft Start
There is a soft start circuit in NCP1403. When power is
applied to the device, the soft start circuit pumps up the
output voltage to approximately 1.5 V at a fixed duty cycle,
the level at which the converter can operate normally. With
the soft start circuit, the output voltage overshoot is
minimized and the startup capability with heavy loads is also
improved.
ON/OFF Timing Control
The maximum on−time is typically 6.0 ms, whereas, the
minimum off−time is typically 1.3 ms. Owing to the current
limit circuit, the on−time can be shorter. The switching
frequency can be up to 300 kHz.
http://onsemi.com
9
NCP1403
APPLICATIONS CIRCUIT INFORMATION
For step−up converter operates in DCM only, the
External Component Selection
Inductor
maximum output current can be calculated from the
The NCP1403 is designed to work well with a range of
equation below:
inductance values, the actual inductance value depends on
(ILIM) 2 L
IOUT(MAX) +
the specific application, output current, efficiency, and
I
L
2(VOUT ) VD * VIN)ǒǒVLIM*V Ǔ ) toff(MIN)Ǔ
output ripple voltage. For step up conversion, the device
IN
S
works well with inductance ranging from 22 mH to 47 mH.
For step−up converter operates in CCM, the maximum
Inductor with small DCR, usually less than 1.0 W, should be
output current can be calculated from the equation below:
used to minimize loss. It is necessary to choose an inductor
(VOUT ) VD * VIN) toff(MIN)
(VIN * VS)
IOUT(MAX) + ILIM *
@
with saturation current greater than the peak switching
2L
(VOUT ) VD * VS)
current in the application.
Diode
If 22 mH inductance is used, lower profile surface mount
The diode is the main source of loss in DC−DC converters.
inductor can be selected for the same current rating.
The most importance parameters which affect their
Moreover, it permits the converter to switch at higher
efficiency are the forward voltage drop, VF, and the reverse
frequency up to 300 kHz since the inductor current will ramp
recovery time, trr. The forward voltage drop creates a loss
up faster and hit the current limit at a shorter time for smaller
just by having a voltage across the device while a current
inductance value. However, current output are slightly
flowing through it. The reverse recovery time generates a
lower because the off−time is limited by the minimum
loss when the diode is reverse biased, and the current appears
off−time. If 47 mH inductance is selected, higher efficiency
to actually flow backwards through the diode due to the
and output current capability are achieved, but the converter
minority carriers being swept from the P−N junction. A
will switch at a lower frequency and the inductor size will be
Schottky diode with the following characteristics is
slightly larger for the same current rating.
recommended:
For lower inductance value, the inductor current
1. Small forward voltage, VF < 0.3 V
ramp−down time will be shorter than the minimum off−time.
2. Small reverse leakage current
Consequently, the converter can only operate in
3. Fast reverse recovery time / switching speed
discontinuous conduction mode and lower output current
4. Rated current larger than peak inductor current,
can be generated. For higher inductance value, if the
Irated > IPK
inductance is sufficiently large, the maximum on−time will
5. Reverse voltage larger than output voltage,
expire before the current limit is reached. As a result, the
Vreverse > VOUT
available output power and output current are reduced.
Input Capacitor
Besides, instability may occur when operation enters CCM.
The input capacitor can stabilize the input voltage and
To ensure the current limit is reached before the maximum
minimize peak current ripple from the source. The value of
on−time expires, L can be selected according to the
the capacitor depends on the impedance of the input source
inequality below:
used. Small ESR (Equivalent Series Resistance) Tantalum
(VIN * VS)
or ceramic capacitor with value of 10 mF should be suitable.
Lv
@t
ǒ
ILIM
on(MAX)
Ǔ
Output Capacitor
The output capacitor is used for sustaining the output
voltage when no current is delivering from the input, and
smoothing the ripple voltage. Low ESR Tantalum capacitor
should be used to reduce output ripple voltage since the
output ripple voltage is dominated by the ESR value of the
Tantalum capacitor. In general, a 22 mF to 47ĂmF low ESR
(0.2 W to 0.4 W) Tantalum capacitor should be appropriate.
The output ripple voltage can be approximately given by the
following equation:
where VS = 0.75 V which is the MOSFET saturation voltage,
and ILIM is the current limit which can be referred to in
Figure 11, and ton(MAX) = 6.0 ms.
If the above condition is satisfied, IPK = ILIM; where IPK
is the peak inductor current. Then, step−up converter with
inductor satisfy the following condition will operate in
DCM only,
ILIM @ L
v toff(MIN)
(VOUT ) VD * VIN)
Vripple [ (IPK * IOUT) @ ESR
If the IPK = ILIM, step−up converter with inductor satisfy
the following condition will operate in CCM at maximum
output current,
Feedback Resistors
Choose the RFB2 value from the range 10 kW to 200 kW
for positive output voltage. The value of RFB1 can then be
calculated from the equation below:
ILIM @ L
u toff(MIN)
(VOUT ) VD * VIN)
ǒVOUT
* 1Ǔ
0.8
where VD is the Schottky diode forward voltage drop,
toff(MIN) = 1.3 ms.
RFB1 + RFB2
1% tolerance resistors should be used for both RFB1 and
RFB2 for better VOUT accuracy.
http://onsemi.com
10
NCP1403
Output Voltage Higher than 15 V
White LED Driver
NCP1403 can be used to generate output voltage higher
than 15 V by adding an external high voltage N−Channel
MOSFET in series with the internal MOSFET switch as
shown in Figure 33. The drain−to−source breakdown
voltage of the external MOSFET must be at least 1 V higher
than the output voltage. The diode D1 helps the external
MOSFET to turn off and ensures that most of the voltage
across the external MOSFET during the switch−off period.
Since the high voltage external MOSFET is in series with the
internal MOSFET, higher break down voltage is achieved
but the current capability is not increased.
There is an alternative application circuit shown in Figure
35 which can output voltage up to 30 V. For this circuit, a
diode−capacitor charge−pump voltage doubler constructed
by D2, D3 and C1 is added. During the internal MOSFET
switch−on time, the LX pin is shorted to ground and D2 will
charge up C1 to the stepped up voltage at the cathode of D1.
During the MOSFET switch−off time, the voltage at VOUT
will be almost equal to the double of the voltage at the
cathode of D1. The VOUT is monitored by the FB pin via the
resistor divider and can be set by the resistor values. Since
the maximum voltage at the cathode of D1 is 15 V, the
maximum VOUT is 30 V. The value of C1 can be in the range
of 0.47 mF to 2.2 mF.
The NCP1403 can be used as a constant current LED
driver which can drive up to 4 white LEDs in series as shown
in Figure 2. The LED current can be set by the resistance
value of RS. The desired LED current can be calculated by
the equation below:
Negative Voltage Generation
VMAX is the maximum voltage of the control signal, VD
is the diode forward voltage, ILED(MAX) is the maximum
LED current and ILED(MIN) is the minimum LED current. If
a PWM control signal is used, the signal frequency from 4
kHz to 40 kHz can be applied.
In case the LEDs fail, the feedback voltage will become
zero. The NCP1403 will then switch at maximum duty cycle
and result in a high output voltage which will cause the LX
pin voltage to exceed its maximum rating. A Zener diode can
be added across the output and FB pin to limit the voltage at
the LX pin. The Zener voltage should be higher than the total
forward voltage of the LED string.
ILED + 0.8
RS
Moreover, the brightness of the LEDs can be adjusted by
a DC voltage or a PWM signal with an additional circuit
illustrated below:
To FB Pin
R1
R2
DC/PWM
Signal
C1
0.1 mF
To LED
D2
100 k
RS
C2
820 pF
GND
With this additional circuit, the maximum LED current is
set by the above equation. The value of R2 can be obtained
by the following equation:
R2 +
The NCP1403 can be used to produce a negative voltage
output by adding a diode−capacitor charge−pump circuit
(D2, D3, and C1) to the LX pin as shown in Figure 32. The
feedback voltage resistor divider is still connected to the
positive output to monitor the positive output voltage and a
small value capacitor is used at C2. When the internal
MOSFET switches off, the voltage at the LX pin charges up
the capacitor through diode D2. When the MOSFET
switches on, the capacitor C1 is effectively connected like a
reversed battery and C1 discharges the stored charges
through the Rds(on) of the internal MOSFET and D3 to
charge up COUT and builds up a negative voltage at VOUT.
Since the negative voltage output is not directly monitored
by the NCP1403, the output load regulation of the negative
output is not as good as the standard positive output circuit.
The resistance values of the resistors of the voltage divider
can be one−tenth of those used in the positive output circuit
in order to improve the regulation at light load.
For the application circuit in Figure 36, it is actually the
combination of the application circuits in Figures 32 and 33.
ǒ
VMAX * VD * 0.8
(ILED(MAX)*ILED(MIN)) RS
R1
Ǔ
PCB Layout Hints
The schematic, PCB trace layout, and component
placement of the step−up DC−DC converter demonstration
board are shown in Figure 28 to Figure 31 for PCB layout
design reference.
Grounding
One point grounding should be used for the output power
return ground, the input power return ground, and the device
switch ground to reduce noise. The input ground and output
ground traces must be thick and short enough for current to
flow through. A ground plane should be used to reduce
ground bounce.
Step−Down Converter
NCP1403 can be configured as a simple step−down
converter by using the open−drain LX pin to drive an
external P−Channel MOSFET as shown in Figure 34. The
resistor RGS is used to switch off the P−Channel MOSFET
during the switch−off period. Too small resistance value
should not be used for RGS, otherwise, the efficiency will be
reduced.
http://onsemi.com
11
NCP1403
Power Signal Traces
External Feedback Resistors
Low resistance conducting paths should be used for the
power carrying traces to reduce power loss so as to improve
efficiency (short and thick traces for connecting the inductor
L can also reduce stray inductance). Besides, the length and
area of all the traces with connection to the LX pin should
be minimized. e.g., short and thick traces listed below should
be used in the PCB:
1. Trace from VIN to L
2. Trace from L to LX pin of the IC
3. Trace from L to anode pin of Schottky diode
4. Trace from cathode pin of Schottky diode to
VOUT.
Feedback resistors should be located as close to the FB pin
as possible to minimize noise picked up by the FB pin. The
ground connection of the feedback resistor divider should be
connected directly to the GND pin.
Input Capacitor
The input capacitor should be located close to both the VIN
to the inductor and the VDD pin of the IC.
Output Capacitor
The output capacitor should be placed close to the output
terminals to obtain better smoothing effect on output ripple
voltage.
L1
TP1
VIN
1.8 V to 5.0 V
47 mH
D1
TP3
VOUT
15 V
MBR0520LT1
+
C1
10 mF
CE
1
C3
R1
Enable
R2
FB
2
LX
5
+
C2
33 mF
NCP1403
VDD
GND
3
4
TP2
GND
Figure 28. Step−Up Converter Demonstration Board Schematic
http://onsemi.com
12
TP4
GND
NCP1403
Figure 29. Step−Up Converter Demonstration Board Top Layer Copper
Figure 30. Step−Up Converter Demonstration Board Bottom Layer Copper
Figure 31. Step−Up Converter Demonstration Board Top Layer Component Silkscreen
http://onsemi.com
13
NCP1403
Components Supplier
Parts
Supplier
Part Number
Description
Phone
L1
Sumida Electric Co. Ltd.
CD43−470KC
Inductor 47 mH
(852) 2880−6688
D1
ON Semiconductor
MBR0520LT1
Schottky Power Rectifier
(852) 2689−0088
C1
Kemet Electronics Corp.
T494A106K010AS
Low ESR Tantalum Capacitor 10 mF/10 V
(852) 2305−1168
C2
Kemet Electronics Corp.
T494C336K016AS
Low ESR Tantalum Capacitor 33 mF/16 V
(852) 2305−1168
OTHER APPLICATIONS
L
47 mH
2.2 mF
C3
VIN
2.0 V to 5.5 V
C1
10 mF
MBR0520LT1 x 2
D3
D1
CE
1
+
D2
MBR0520LT1
LX
5
+
CC
FB
2
3000 pF
NCP1403
VDD
3
VOUT
−15 V
6 mA at VIN = 2.0 V
C4 40 mA at VIN = 5.5 V
33 mF
25 V
C2
0.1 mF
GND
6
RFB1
RFB2
L: CD43−470KC, Sumida
C1: T494A106K010AS, Kemet
C2: EMK107BJ104MA, Taiyo Yuden
C3: GMK316F225ZG, Taiyo Yuden
C4: T494D336K025AS, Kemet
D1, D2, D3: MBR0520LT1, ON Semiconductor
ǒ
Ǔ
R
VOUT [ * 0.8 FB1 ) 1 ) 1
RFB2
Figure 32. Positive−to−Negative Output Converter for Negative LCD Bias
L
47 mH
VIN
3.0 V to 5.5 V
C1
10 mF
10 V
D1
MBR0530T1
MGSF1N03T1
/
NTHS5402T1
Q1
+
CE
1
FB
2
VDD
3
LX
5
CC
750 pF to
2000 pF
D2
RFB1
VOUT
Up to 29 V
+
6 mA at VIN = 3.0 V
C2 35 mA at VIN = 5.5 V
22 mF
35 V
MMSD914T1
NCP1403
RFB2
GND
6
ǒ
Ǔ
R
VOUT + 0.8 FB1 ) 1
RFB2
L: CD43−470KC, Sumida
C1: T494A106K010AS, Kemet
C2: T494D226K035AS, Kemet
Q1: MGSF1N03T1, ON Semiconductor
NTHS5402T1, ON Semiconductor
D1: MBR0530T1, ON Semiconductor
D2: MMSD914T1, ON Semiconductor
Figure 33. Step−Up DC−DC Converter with 29 V Output Voltage
http://onsemi.com
14
NCP1403
Q1
VIN
2.2 V to 4.2 V
C1
22 mF
10 V
RGS
820
LX
5
+
CE
1
FB
2
L
100
mH
VOUT
1.6 V
68 mF + 200 mA
6V
C2 at VIN =
RFB1
2.2 V
CC
D1
750 pF to
2000 pF
MBR0520LT1
NCP1403
RFB2
VDD
3
L:
C1:
C2:
Q1:
D1:
MGSF1P02LT1
GND
6
ǒ
Ǔ
R
VOUT + 0.8 FB1 ) 1
RFB2
CD43−101KC, Sumida
T494C226K010AS, Kemet
T494D686K006AS, Kemet
MGSF1P02ELT1, ON Semiconductor
MBR0520LT1, ON Semiconductor
Figure 34. Step−down DC−DC Converter with 1.6 V Output Voltage for DSP Circuit
L
47 mH
C3
2.2 mF D3 MBR0520LT1
VIN
1.8 V to 5.5 V
C1
10 mF
10 V
+
CE
1
CC
RFB1
750 pF to
2000 pF
FB
2
VDD
3
D2
MBR0520LT1
LX
5
U1
D1
MBR0520LT1
NCP1403
GND
6
+
C4
10 mF
20 V
+
VOUT
30 V
2 mA at VIN = 1.8 V
35 mA at VIN = 5.5 V
C2
10 mF
20 V
RFB2
ǒ
Ǔ
R
VOUT + 0.8 FB1 ) 1
RFB2
L: CD43−470KC, Sumida
C1: T494A106K010AS, Kemet
C2, C4: T494D106K020AS, Kemet
C3: GMK316F225ZG, Taiyo Yuden
D1, D2, D3: MBR0520LT1, ON Semiconductor
Figure 35. Step−Up DC−DC Converter with 30 V Output Voltage
http://onsemi.com
15
NCP1403
D3
D4 MBR0530T1 x 2
VOUT
−28 V
L
+
47 mH
C3
D2
2.2 mF / 50 V
VIN
3.5 V to 5.0 V
+
MMSD914T1
+
C1
10 mF
10 V
CE
1
CC
RFB1
750 pF to
2000 pF
FB
2
U1
C4
22 mF
35 V
9 mA at VIN = 3.3 V
20 mA at VIN = 5.0 V
C2
1 mF
50 V
Q1
LX
MGSF1N03T1
5
/
NTHS5402T1
D1 MMSD914T1
NCP1403
VDD
3
ǒ
GND
6
Ǔ
R
VOUT [ * 0.8 FB1 ) 1 ) 1
RFB2
RFB2
L:
C1:
C2:
C3:
C4:
Q1:
CD43−470KC, Sumida
T494A106K010AS, Kemet
UMK212F105ZG, Taiyo Yuden
GMK316F225ZG, Taiyo Yuden
T494D226K035AS, Kemet
MGSF1N03T1, ON Semiconductor/
NTHS5402T1, ON Semiconductor
D1, D2: MMSD914T1, ON Semiconductor
D3, D4: MBR0530T1, ON Semiconductor
Figure 36. Voltage Inverting DC−DC Converter with −28 V Output Voltage
MBR0520LT1
D2
MBR0520LT1
D3
VOUT2
−15 V
2 mA at VIN = 1.8 V
22 mF 5 mA at VIN = 2.4 V
20 V
10 mA at VIN = 3.0 V
C5
C4
2.2 mF
L1 47 mH
+
VIN 1.8 V to 5.5 V
C1
10 mF
10 V
ON
750 pF to
2000 pF
CE
1
JPI
OFF
C3
+
D1
MBR0520LT1
R1
R2
FB
2
VDD
3
U1
LX
5
NCP1403
ǒ
GND
6
Ǔ
R
VOUT1 + 0.8 FB1 ) 1
RFB2
VOUT2 [ * VOUT1 ) 0.3
L1: CD43−470KC, Sumida
C1: T494A106K010AS, Kemet
C2, C5: T494C226K020AS, Kemet
C3: UMK107B102KZ, Taiyo Yuden
C4: TMK316BJ225ML, Taiyo Yuden
D1, D2, D3: MBR0520LT1, ON Semiconductor
R1: 390 kW
Figure 37. +15 V, −15 V Outputs Converter for LCD Bias Supply
R2: 22 kW
http://onsemi.com
16
C2
22 mF
20 V
VOUT1
15 V
2 mA at VIN = 1.8 V
5 mA at VIN = 2.4 V
10 mA at VIN = 3.0 V
NCP1403
MBR0520LT1
D3
MBR0520LT1
D4
C7
C5
2.2 mF
L1 47 mH
MBR0520LT1 +
D5
C4 2.2 mF
VIN 1.8 V to 5.5 V
C1
10 mF
10 V
+
ON
CE
1
C3
R1
R2
FB
2
VDD
3
U1
LX
5
C6
22 mF
20 V
MBR0520LT1
JPI
OFF
+
D2
750 pF to
2000 pF
22 mF
20 V
+ C2
D1
MBR0520LT1
10 mF
10 V
NCP1403
GND
6
ǒ
Ǔ
R
VOUT1 + 0.8 FB1 ) 1
RFB2
L1: CD43−470KC, Sumida
V
VOUT2 [ * OUT1
C1, C2: T494A106K010AS, Kemet
2
C3: UMK107B102KZ, Taiyo Yuden
C4, C5: TMK316BJ225ML, Taiyo Yuden
C6, C7: T494C226K020AS, Kemet
D1, D2, D3, D4, D5: MBR0520LT1, ON Semiconductor
R1: 390 kW
Figure 38. +15 V, −7.5 V Outputs Converter for CCD Supply Circuit
R2: 22 kW
http://onsemi.com
17
VOUT2
−7.5 V
5 mA at VIN = 3.0 V
VOUT1
15 V
20 mA at VIN = 3.0 V
NCP1403
PACKAGE DIMENSIONS
TSOP−5
SN SUFFIX
CASE 483−02
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. A AND B DIMENSIONS DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
D
S
5
4
1
2
3
B
L
G
DIM
A
B
C
D
G
H
J
K
L
M
S
A
J
C
0.05 (0.002)
H
M
K
MILLIMETERS
MIN
MAX
2.90
3.10
1.30
1.70
0.90
1.10
0.25
0.50
0.85
1.05
0.013
0.100
0.10
0.26
0.20
0.60
1.25
1.55
0_
10 _
2.50
3.00
INCHES
MIN
MAX
0.1142 0.1220
0.0512 0.0669
0.0354 0.0433
0.0098 0.0197
0.0335 0.0413
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0610
0_
10 _
0.0985 0.1181
SOLDERING FOOTPRINT*
0.95
0.037
1.9
0.074
2.4
0.094
1.0
0.039
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
http://onsemi.com
18
For additional information, please contact your
local Sales Representative.
NCP1403/D