DB101G thru DB104G Single Phase Glass Passivated Silicon Bridge Rectifier VRRM = 50 V - 400 V IO = 1 A Features • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique DB Package • High surge current capability • Small size, simple installation • Types from 50 V up to 400 V VRRM • Not ESD Sensitive Mechanical Data Case: Molded plastic Terminals: Plated terminals, solderable per MIL-STD202, Method 208 Polarity: Polarrity symbols marked on the body Mounting position: Any Maximum ratings at Tc = 25 °C, unless otherwise specified Parameter S Symbol C diti Conditions DB101G G DB102G G DB103G DB104G Unit Repetitive peak reverse voltage VRRM 50 100 200 400 V RMS reverse voltage VRMS 35 70 140 280 V DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg 50 -55 to 150 -55 to 150 100 -55 to 150 -55 to 150 200 -55 to 150 -55 to 150 400 -55 to 150 -55 to 150 V °C °C Electrical characteristics at Tc = 25 °C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Parameter Symbol Conditions DB101G DB102G DB103G DB104G Unit Maximum average forward rectified current IO Ta = 40 °C 1.0 1.0 1.0 1.0 A Peak forward surge current IFSM tp = 8.3 ms, half sine 30 30 30 30 A Maximum instantaneous forward voltage drop VF IF = 1.0 A 1.1 1.1 1.1 1.1 V Maximum DC reverse current at rated DC blocking voltage IR Ta = 25 °C 5 5 5 5 Ta = 125 °C Typical junction capacitance Cj 500 25 500 25 500 25 500 25 RΘJC 20 20 20 20 Typical thermal resistance www.genesicsemi.com/silicon-products/bridge-rectifiers/ 1 μA pF °C/W DB101G thru DB104G www.genesicsemi.com/silicon-products/bridge-rectifiers/ 2 DB101G thru DB104G Package dimensions and terminal configuration Product is marked with part number and terminal configuration. Di Dimensions i iin iinches h and d ((millimeters) illi t ) www.genesicsemi.com/silicon-products/bridge-rectifiers/ 3