MOSFET SMD Type P-Channel MOSFET AO4447 (KO4447) SOP-8 ■ Features ● VDS (V) =-30V ● ID =-15 A (VGS =-10V) ● RDS(ON) ＜ 7.5mΩ (VGS =-10V) 1.50 0.15 0.21 -0.02 +0.04 ● RDS(ON) ＜ 12mΩ (VGS =-4.5V) ● ESD Rating: 4KV HBM D 1 2 3 4 Source Source Source Gate 5 6 7 8 Drain Drain Drain Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Current ID IDM Unit V -15 -13.6 A -60 Avalanche Current IAR 40 A Repetitive avalanche energy L=0.3mH EAR 240 mJ Power Dissipation Ta = 25℃ Ta = 70℃ Thermal Resistance.Junction- to-Ambient t ≤10s Steady-State PD RthJA 3.1 2 40 75 RthJC 24 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 Thermal Resistance.Junction- to-Case Steady-State W ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET AO4447 (KO4447) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current Gate Threshold Voltage IGSS VGS(th) Test Conditions Min ID=-250μA, VGS=0V RDS(On) VDS=-30V, VGS=0V, TJ=55℃ -10 VDS=VGS ID=-250μA VGS=-10V, ID=-15A TJ=125℃ ID(ON) Forward Transconductance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg ±10 uA -1.6 V 6.7 7.5 9.4 12 9.2 12 VDS=-5V, ID=-15A -60 60 5500 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 3.1 4 88.8 120 45.2 60 VGS=-10V, VDS=-15V, ID=-15A 10.1 19.4 Turn-On DelayTime td(on) 12 tr trr Body Diode Reverse Recovery Charge Qrr Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD ■ Marking Marking VGS=-10V, VDS=-15V, RL=1.7Ω,RG=3Ω tf Body Diode Reverse Recovery Time 4447 KC**** www.kexin.com.cn pF VGS=-4.5V, VDS=-15 V, ID=-15A Qgd td(off) 6600 473 Gate Drain Charge Turn-Off DelayTime S 745 Qgs Turn-On Rise Time mΩ A Gate Source Charge Turn-Off Fall Time 2 gFS VGS=-10V, VDS=-5V μA -1.25 VDS=0V, VGS=±20V -0.9 Unit V -1 VGS=-4V, ID=-13A On state drain current Max VDS=-30V, VGS=0V VGS=-10V, ID=-15A Static Drain-Source On-Resistance Typ -30 Ω nC 11.5 ns 100 40 IF=-15A, dI/dt=100A/μs IS=-1A,VGS=0V 46.6 60 67.7 -0.69 nC -5.5 A -1 V MOSFET SMD Type P-Channel MOSFET AO4447 (KO4447) ■ Typical Characterisitics 60 -3.5V 50 25 -10V VDS=-5V 20 -3V -ID(A) -ID (A) 125°C -4V 40 30 20 10 25°C VGS=-2.5V 10 15 5 0 0 0 1 2 3 4 1 5 1.5 1.6 Normalized On-Resistance RDS(ON) (mΩ ) 12 VGS=-4V 10 8 VGS=-10V 6 2.5 3 VGS=-4V ID=-13A 1.4 VGS=-10V ID=-15A 1.2 1 0.8 0.6 0 5 10 15 20 25 -50 -25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 30 ID=-15A 25 1.0E+00 125°C 1.0E-01 20 15 -IS (A) RDS(ON) (mΩ ) 2 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 125°C 25°C 1.0E-03 10 1.0E-04 25°C 5 1.0E-02 1.0E-05 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET AO4447 (KO4447) ■ Typical Characterisitics 8000 10 VDS=-15V ID=-15A 7000 Ciss 6000 Capacitance (pF) -VGS (Volts) 8 6 4 5000 4000 3000 Crss Coss 2000 2 1000 0 0 20 40 60 80 0 100 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 100.0 100µs 10ms 0.1s 1s 1.0 10s TJ(Max)=150°C TA=25°C Zθ JA Normalized Transient Thermal Resistance 10 1 10 . -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 100 TJ(Max)=150°C TA=25°C 60 40 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 0.01 0.00001 4 30 20 DC 0.1 0.1 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 80 1ms 10.0 10 100 10µs Power (W) -ID (Amps) RDS(ON) limited 5 Ton T Single Pulse 0.0001 www.kexin.com.cn 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000