ON MJB6488 Complementary silicon plastic power transistor Datasheet

MJB6488, MJB6491
Product Preview
Complementary Silicon
Plastic Power Transistors
. . . designed for use in general−purpose amplifier and switching
applications.
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• DC Current Gain Specified to 15 A −
•
•
•
hFE = 20 − 150 @ IC = 5.0 Adc
= 5.0 (Min) @ IC = 15 Adc
Collector−Emitter Sustaining Voltage −
VCEO(sus) = 80 Vdc (Min)
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model; 3B, >8000 V,
Machine Model; C, >400 V
15 A
COMPLEMENTARY SILICON
POWER TRANSISTORS
80 V, 75 W
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MARKING
DIAGRAM
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
80
Vdc
Collector−Base Voltage
VCB
90
Vdc
Emitter−Base Voltage
VEB
5.0
Vdc
Collector−Emitter Voltage
Collector Current − Continuous
IC
15
Adc
Base Current
IB
5.0
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
75
0.6
W
W/°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
1.8
0.014
W
W/°C
TJ, Tstg
– 65 to
+ 150
°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RJC
1.67
°C/W
Thermal Resistance, Junction−to−Ambient
RJA
70
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
JB64xx
D2PAK
CASE 418B
STYLE 1
xx
A
Y
WW
AYWW
= 88 or 91
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Package
Shipping†
MJB6488
D2PAK
50 Units / Rail
800 / Tape & Reel
Device
MJB6488T4
D2PAK
MJB6491
D2PAK
50 Units / Rail
MJB6491T4
D2PAK
800 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
 Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. P0
1
Publication Order Number:
MJB6488/D
MJB6488, MJB6491
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
80
−
Vdc
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 200 mAdc, IB = 0)
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 200 mAdc, VBE = 1.5 Vdc)
VCEX
90
−
Vdc
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
ICEO
−
1.0
mAdc
Collector Cutoff Current
(VCE = 85 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150°C)
ICEX
−
−
100
5.0
Adc
mAdc
(VBE = 5.0 Vdc, IC = 0)
IEBO
−
10
A
(IC = 5.0 Adc, VCE = 4.0 Vdc)
(IC = 15 Adc, VCE = 4.0 Vdc)
hFE
20
5.0
150
−
−
(IC = 5.0 Adc, IB = 0.5 Adc)
(IC = 15 Adc, IB = 5.0 Adc)
VCE(sat)
−
−
1.3
3.5
Vdc
(IC = 5.0 Adc, VCE = 4.0 Vdc)
(IC = 15 Adc, VCE = 4.0 Vdc)
VBE(on)
−
−
1.3
3.5
Vdc
(IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 MHz)
fT
5.0
−
MHz
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
25
−
−
Emitter Cutoff Current
ON CHARACTERISTICS
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter On Voltage
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
Small−Signal Current Gain
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
2. fT = |hfe| • ftest.
5000
1000
C, CAPACITANCE (pF)
700
1000
500
tf
NPN
PNP
200
100
50
0.2
0.5
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
Cob
300
Cib
200
Cob
100
NPN
PNP
TJ = 25°C
70
1.0
2.0
5.0
IC, COLLECTOR CURRENT (A)
10
50
20
0.5
1.0
Figure 1. Turn−Off Time
PD, POWER DISSIPATION (WATTS)
t, TIME (ns)
ts
TA
4.0
TC
80
3.0
60
2.0
5.0
10
20
VR, REVERSE VOLTAGE (V)
Figure 2. Capacitances
TC
2.0
40
TA
1.0
20
0
0
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
Figure 3. Power Derating
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2
140
160
50
MJB6488, MJB6491
VCC
+ 30 V
25 s
1000
500
RC
+ 10 V
tr
SCOPE
− 10 V
51
tr, tf 10 ns
DUTY CYCLE = 1.0%
t, TIME (ns)
RB
0
D1
200
100
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
FOR PNP, REVERSE ALL POLARITIES.
TC = 25°C
VCC = 30 V
IC/IB = 10
20
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
10
0.2
0.5
2.0
1.0
5.0
IC, COLLECTOR CURRENT (A)
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 4. Switching Time Test Circuit
1.0
0.7
0.5
td @ VBE(off) 5.0 V
NPN
PNP
50
−4V
10
20
Figure 5. Turn−On Time
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
P(pk)
ZJC (t) = r(t) RJC
RJC = 1.67°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) ZJC(t)
0.05
0.02
0.03
0.02
0.01
0.01
0.01
0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
t1
t2
DUTY CYCLE, D = t1/t2
100
200
500 1.0 k
t, TIME (ms)
Figure 6. Thermal Response
IC, COLLECTOR CURRENT (AMP)
20
10
100 s
5.0
500 s
2.0
1.0 ms
TJ = 150°C
1.0
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
0.5
5.0 ms
CURVES APPLY BELOW RATED VCEO
0.2
0.1
There are two limitations on the power handling ability of
a transistors average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 7 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150°C. TJ(pk) may be calculated from the data in
Figure 6. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown
dc
2.0
40 60
4.0
10
20
VCE, COLLECTOR−EMITTER VOLTAGE (V)
80
Figure 7. Active−Region Safe Operating Area
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3
MJB6488, MJB6491
NPN − MJB6488
PNP − MJB6491
500
500
TJ = 150°C
100
−55 °C
50
20
VCE = 2.0 V
10
5.0
0.2
0.5
TJ = 150°C
200
25°C
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
200
25°C
100
−55 °C
50
20
10
1.0
2.0
5.0
IC, COLLECTOR CURRENT (A)
10
5.0
20
VCE = 2.0 V
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (A)
10
20
2.0
VCE , COLLECTOR−EMITTER VOLTAGE (V)
VCE , COLLECTOR−EMITTER VOLTAGE (V)
Figure 8. DC Current Gain
TJ = 25°C
1.8
1.6
1.4
1.2
1.0
IC = 1.0 A
0.8
4.0 A
8.0 A
0.6
0.4
0.2
0
5.0
10
20
50 100
200 500 1000
IB, BASE CURRENT (mA)
2.0
1.6
1.4
1.2
IC = 1.0 A
1.0
4.0 A
8.0 A
0.8
0.6
0.4
0.2
0
5.0
2000 5000
TJ = 25°C
1.8
10
20
50 100
200 500 1000
IB, BASE CURRENT (mA)
2000 5000
Figure 9. Collector Saturation Region
2.8
2.8
TJ = 25°C
2.0
1.6
1.2
VBE(sat) = IC/IB = 10
0.8
VBE @ VCE = 2.0 V
0.4
TJ = 25°C
2.4
V, VOLTAGE (V)
V, VOLTAGE (V)
2.4
2.0
1.6
1.2
VBE(sat) @ IC/IB = 10
0.8
VBE @ VCE = 2.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.2
0.5
1.0
VCE(sat) @ IC/IB = 10
2.0
5.0
10
0
20
0.2
IC, COLLECTOR CURRENT (AMP)
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
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4
10
20
MJB6488, MJB6491
PACKAGE DIMENSIONS
D2PAK
CASE 418B−04
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
V
W
−B−
4
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
A
1
2
S
3
−T−
SEATING
PLANE
K
D
H
3 PL
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
T B
M
M
N
R
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
P
U
L
M
W
J
G
L
L
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT
8.38
0.33
1.016
0.04
10.66
0.42
5.08
0.20
3.05
0.12
17.02
0.67
SCALE 3:1
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5
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
mm inches
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
MJB6488, MJB6491
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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MJB6488/D
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