NLU1GT04 Single Inverter, TTL Level LSTTL−Compatible Inputs The NLU1GT04 MiniGatet is an advanced CMOS high−speed inverting buffer in ultra−small footprint. The device input is compatible with TTL−type input thresholds and the output has a full 5.0 V CMOS level output swing. The NLU1GT04 input and output structures provide protection when voltages up to 7 V are applied, regardless of the supply voltage. www.onsemi.com MARKING DIAGRAMS Features • • • • High Speed: tPD = 3.8 ns (Typ) @ VCC = 5.0 V Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C TTL−Compatible Input: VIL = 0.8 V; VIH = 2.0 V CMOS−Compatible Output: VOH > 0.8 VCC; VOL < 0.1 VCC @ Load Power Down Protection Provided on inputs Balanced Propagation Delays Ultra−Small Packages These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant UDFN6 MU SUFFIX CASE 517AA N • • • • M 1 UDFN6 MU SUFFIX CASE 517AQ PM 1 N or P M = Device Marking = Date Code PIN ASSIGNMENT NC 1 IN A 6 2 5 3 GND 4 VCC NC 1 June, 2016 − Rev. 3 2 IN A 3 GND 4 OUT Y 5 NC 6 VCC FUNCTION TABLE A Y L H H L OUT Y ORDERING INFORMATION Figure 2. Logic Symbol © Semiconductor Components Industries, LLC, 2016 NC OUT Y Figure 1. Pinout (Top View) IN A 1 See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. 1 Publication Order Number: NLU1GT04/D NLU1GT04 MAXIMUM RATINGS Symbol Value Unit VCC DC Supply Voltage −0.5 to +7.0 V VIN DC Input Voltage −0.5 to +7.0 V DC Output Voltage −0.5 to +7.0 V VIN < GND −20 mA VOUT < GND ±20 mA VOUT Parameter IIK DC Input Diode Current IOK DC Output Diode Current IO DC Output Source/Sink Current ±12.5 mA ICC DC Supply Current Per Supply Pin ±25 mA IGND DC Ground Current per Ground Pin ±25 mA TSTG Storage Temperature Range −65 to +150 °C TL Lead Temperature, 1 mm from Case for 10 Seconds 260 °C TJ Junction Temperature Under Bias 150 °C MSL FR VESD ILATCHUP Moisture Sensitivity Level 1 Flammability Rating Oxygen Index: 28 to 34 ESD Withstand Voltage UL 94 V−0 @ 0.125 in Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) Latchup Performance Above VCC and Below GND at 125 °C (Note 5) > 2000 > 200 N/A V ±500 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow. 2. Tested to EIA / JESD22−A114−A. 3. Tested to EIA / JESD22−A115−A. 4. Tested to JESD22−C101−A. 5. Tested to EIA / JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit 1.65 5.5 V VCC Positive DC Supply Voltage VIN Digital Input Voltage 0 5.5 V Output Voltage 0 5.5 V −55 +125 °C 0 0 100 20 ns/V VOUT TA Operating Free−Air Temperature Dt/DV Input Transition Rise or Fall Rate VCC = 3.3 V ± 0.3 V VCC = 5.0 V ± 0.5 V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2 NLU1GT04 DC ELECTRICAL CHARACTERISTICS Symbol Parameter VIH Low−Level Input Voltage VIL VOH VOL Conditions Low−Level Input Voltage High−Level Output Voltage Low−Level Output Voltage TA = 25 5C TA = +855C TA = −555C to +1255C Min Min VCC (V) Min 1.8 1.2 1.2 1.2 3.0 1.4 1.4 1.4 4.5 to 5.5 2.0 2.0 2.0 Typ Max Max Max V 1.8 0.3 0.3 0.3 3.0 0.53 0.53 0.53 4.5 to 5.5 0.8 0.8 0.8 VIN = VIH or VIL IOH = −50 mA 3.0 4.5 2.9 4.4 VIN = VIH or VIL IOH = −2 mA IOH = −4 mA IOH = −8 mA 1.8 3.0 4.5 1.40 2.58 3.94 VIN = VIH or VIL IOL = 50 mA 3.0 4.5 VIN = VIH or VIL IOL = 2 mA IOL = 4 mA IOL = 8 mA 3.0 4.5 0 0 2.9 4.4 2.9 4.4 1.38 2.48 3.80 1.37 2.34 3.66 Unit V V 0.1 0.1 0.1 0.1 0.1 0.1 1.8 3.0 4.5 0.36 0.36 0.36 0.44 0.44 0.44 0.52 0.52 0.52 V IIN Input Leakage Current 0 v VIN v 5.5 V 0 to 5.5 ±0.1 ±1.0 ±1.0 mA ICC Quiescent Supply Current 0 v VIN v VCC 5.5 1.0 20 40 mA ICCT Quiescent Supply Current VIN = 3.4 V 5.5 1.35 1.50 1.65 mA IOPD Output Leakage Current VOUT = 5.5 V 0.0 0.5 5.0 10 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Symbol tPLH, tPHL Parameter Propagation Delay, Input A to Output Y CIN Input Capacitance CPD Power Dissipation Capacitance (Note 6) TA = 25 5C TA = +855C TA = −555C to +1255C VCC (V) Test Condition Typ Max Max Unit 3.0 to 3.6 CL = 15 pF 5.0 10.0 11.0 13.0 ns CL = 50 pF 6.2 13.5 15.0 17.5 4.5 to 5.5 CL = 15 pF 3.8 6.7 7.5 8.5 CL = 50 pF 4.2 7.7 8.5 9.5 5 10 10 10.0 Min 5.0 10 Min Max Min pF pF 6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without load. Average operating current can be obtained by the equation ICC(OPR) = CPD • VCC • fin + ICC. CPD is used to determine the no−load dynamic power consumption: PD = CPD • VCC2 • fin + ICC • VCC. www.onsemi.com 3 NLU1GT04 VCC A or B 50% GND tPLH Y tPHL 50% VCC Figure 3. Switching Waveforms OUTPUT INPUT CL* *Includes all probe and jig capacitance. A 1−MHz square input wave is recommended for propagation delay tests. Figure 4. Test Circuit ORDERING INFORMATION Package Shipping† NLU1GT04MUTCG UDFN6 (Pb−Free) 3000 / Tape & Reel NLU1GT04AMUTCG UDFN6 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 4 NLU1GT04 PACKAGE DIMENSIONS UDFN6, 1.2x1.0, 0.4P CASE 517AA ISSUE D EDGE OF PACKAGE PIN ONE REFERENCE 2X 0.10 C L1 ÉÉ ÉÉ E DETAIL A Bottom View (Optional) TOP VIEW 2X EXPOSED Cu 0.10 C (A3) 0.10 C A1 A 10X 0.08 C ÉÉÉ ÉÉÉ A3 DETAIL B Side View (Optional) 5X MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.127 REF 0.15 0.25 1.20 BSC 1.00 BSC 0.40 BSC 0.30 0.40 0.00 0.15 0.40 0.50 MOUNTING FOOTPRINT* 6X 6X 0.42 C A1 DIM A A1 A3 b D E e L L1 L2 MOLD CMPD SEATING PLANE SIDE VIEW 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A B D 0.22 L 3 L2 6X b 0.10 C A B 0.05 C 6 0.40 PITCH 4 e NOTE 3 1.07 DIMENSIONS: MILLIMETERS BOTTOM VIEW *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 5 NLU1GT04 PACKAGE DIMENSIONS UDFN6, 1.45x1.0, 0.5P CASE 517AQ ISSUE O A B D L L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM THE TERMINAL TIP. L1 PIN ONE REFERENCE 0.10 C ÉÉÉ ÉÉÉ DETAIL A E OPTIONAL CONSTRUCTIONS ÉÉ ÉÉ EXPOSED Cu TOP VIEW 0.10 C DETAIL B MOLD CMPD DETAIL B 0.05 C 6X DIM A A1 A2 b D E e L L1 OPTIONAL CONSTRUCTIONS A MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.07 REF 0.20 0.30 1.45 BSC 1.00 BSC 0.50 BSC 0.30 0.40 −−− 0.15 MOUNTING FOOTPRINT 0.05 C A1 A2 SIDE VIEW e 6X C 6X SEATING PLANE L 1.24 3 1 DETAIL A 6X 0.53 6 0.30 PACKAGE OUTLINE 4 BOTTOM VIEW 6X 0.50 PITCH DIMENSIONS: MILLIMETERS b 0.10 C A B 0.05 C 1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NOTE 3 MiniGate is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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