, Una. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN RF Transistor BFS540 DESCRIPTION • Low Noise Figure SOT-323 package NF = 1.3 dB TYP. @VCE = 8 V, lc = 10 mA, f = 900 MHz • High Current-Gain—Bandwidth Product fT= 9 GHz TYP. @VCE = 8 V, lc = 40 mA, f = 1 GHz APPLICATIONS • Designed for RF wideband amplifier applications such as satellite TV systems and RF portable communication T l l:Base a c j_ I 2-. Emitter 3; Collector equipment with signal frequencies up to 2 GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V mm DIM VEBO Emitter-Base Voltage 2.5 V lc Collector Current-Continuous 120 mA PC Collector Power Dissipation @TC=25'C 0.5 W Tj Tstg Junction Temperature Storage Temperature Range 175 r -65-150 'C WIN MAX A 0. 30 o. so B 1.15 1.35 C' 2.00 2. ;o D 0.65 H 1.80 120 K 0.80 1. 00 M 0.10 0. 25 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors BFS540 Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS Tc=25'C unless otherwise specified SYMBOL PARAMETER MIN CONDITIONS IcBO Collector Cutoff Current VCB= 8V; IE= 0 hFE DC Current Gain lc= 40mA ; VCE= 8V ft Current-Gain—Bandwidth Product lc= 40mA ; VCE= 8V; f= 1GHz COB Output Capacitance Cre TYP. 60 MAX UNIT 0.05 uA 250 g GHz l E =0;V C B=8V;f=1MHz 0.9 PF Feedback Capacitance lc=0;V CB =8V;f=1MHz 0.6 PF Insertion Power Gain lc= 40mA ; VCE= 8V; f= 900MHz 13 dB NF Noise Figure lc= 10mA ; VCE= 8V; f= 900MHz 1.3 1.8 dB NF Noise Figure lc= 40mA ; VCE= 8V; f= 900MHz 1.9 2.4 dB NF Noise Figure lo=10mA; VCE= 8V; f= 2GHz 2.1 1 S2ie I 2 40C 12 2CO \ = tot 30C dB /CE = 9 V: T = 25 h FE "5D \ :oc \E 10C ••CD 1 \V 5C 1DD 153T c .:°Ci2DO Power derating curve 1CT2 10-' 1 "C > DC current gain as a function of collector current