Diodes GBJ2001 20a glass passivated bridge rectifier Datasheet

GBJ20005 - GBJ2010
20A GLASS PASSIVATED BRIDGE RECTIFIER
Features
Glass Passivated Die Construction
High Case Dielectric Strength of 1500VRMS
Low Reverse Leakage Current
Surge Overload Rating to 240A Peak
Ideal for Printed Circuit Board Applications
Plastic Material - UL Flammability
Classification 94V-0
UL Listed Under Recognized Component
Index, File Number E94661
·
·
·
·
·
·
·
GBJ
A
K
_
Mechanical Data
J
·
·
·
·
·
G
E
30.30
19.70
20.30
C
17.00
18.00
M
D
3.80
4.20
E
7.30
7.70
G
9.80
10.20
P
H
2.00
2.40
I
0.90
1.10
J
2.30
2.70
K
R
I
Max
29.70
B
N
C
Min
A
L
S
D
H
Case: Molded Plastic
Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
Polarity: Molded on Body
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 in-lbs Maximum
Weight: 6.6 grams (approx)
Marking: Type Number
·
·
B
Dim
E
3.0 X 45°
L
4.40
M
3.40
4.80
3.80
N
3.10
3.40
P
2.50
2.90
R
0.60
0.80
S
10.80
11.20
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Rectified Output Current @ TC = 110°C
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
(JEDEC method)
Forward Voltage per element
@ IF = 10A
Peak Reverse Current
at Rated DC Blocking Voltage
I2t
@ TA = 25°C
@ TC = 125°C
Rating for Fusing (t < 8.3 ms) (Note 1)
Typical Junction Capacitance per Element (Note 2)
Typical Thermal Resistance Junction to Case (Note 3)
Operating and Storage Temperature Range
Notes:
Symbol
GBJ
20005
GBJ
2001
GBJ
2002
GBJ
2004
GBJ
2006
GBJ
2008
GBJ
2010
Unit
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
VR(RMS)
35
70
140
280
420
560
700
V
IO
20
A
IFSM
240
A
VFM
1.05
V
IR
10
500
µA
I2t
240
A2s
Cj
60
pF
RqJC
0.8
°C/W
Tj, TSTG
-65 to +150
°C
1. Non-repetitive, for t > 1ms and < 8.3 ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm aluminum plate heat sink.
DS21220 Rev. D-2
1 of 2
GBJ20005-GBJ2010
20
With heatsink
15
10
Without heatsink
5
Resistive or
Inductive load
0
25
50
75
100
125
150
100
IF, INSTANTANEOUS FORWARD CURRENT (A)
IO, AVERAGE RECTIFIED CURRENT (A)
25
10
1.0
0.1
Tj = 25°C
Pulse width = 300µs
0.01
100
Tj = 25°C
Single half-sine-wave
(JEDEC method)
200
150
100
50
0
1
1.6
2.0
Tj = 25°C
f = 1MHz
1
1
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
IR, INSTANTANEOUS REVERSE CURRENT (µA)
1.2
10
100
10
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
Cj, JUNCTION CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
250
0.4
0
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
1000
100
Tj = 125°C
Tj = 100°C
10
Tj = 50°C
1.0
Tj = 25°C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS21220 Rev. D-2
2 of 2
GBJ20005-GBJ2010
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