LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only DOT MATRIX LED DISPLAY(1.2Inch) LMD6711/2ASE-XX DATA SHEET DOC. NO : QW0905- LMD6711/2ASE-XX REV. : D DATE : 20 - Jan. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LMD6711/2ASE-XX Page 1/7 Package Dimensions 23.75(0.935) LMD6711/2ASE-XX LIGITEK 20(0.787") 7.0(0.276") PIN NO.1 27.0 (1.063") 34.0 (1.339") 2.54X6 =15.24 (0.6") 3.25 (0.128") 2.75(0.108") ψ0.45 TYP 3.8±0.5 15.24(0.6") Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/7 PART NO. LMD6711/2ASE-XX Internal Circuit Diagram LMD6711ASE-XX COLUMN 1 2 3 4 5 ROW PIN 8 9 10 11 12 1 1 2 2 3 3 4 4 5 5 6 6 7 7 LMD6712ASE-XX COLUMN ROW PIN 1 1 2 2 3 3 4 4 5 5 6 6 7 7 1 2 3 4 5 8 9 10 11 12 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/7 PART NO. LMD6711/2ASE-XX Electrical Connection PIN NO. LMD6711ASE-XX PIN NO. LMD6712ASE-XX 1. Anode Row 1 1. Cathode Row 1 2. Anode Row 2 2. Cathode Row 2 3. Anode Row 3 3. Cathode Row 3 4. Anode Row 4 4. Cathode Row 4 5. Anode Row 5 5. Cathode Row 5 6. Anode Row 6 6. Cathode Row 6 7. Anode Row 7 7. Cathode Row 7 8. Cathode Column 8 8. Anode Column 8 9. Cathode Column 9 9. Anode Column 9 10. Cathode Column 10 10. Anode Column 10 11. Cathode Column 11 11. Anode Column 11 12. Cathode Column 12 12. Anode Column 12 13. Nc 13. Nc 14. No Pin 14. No Pin LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LMD6711/2ASE-XX Page 4/7 Absolute Maximum Ratings at Ta=25 ℃ Ratings Parameter Symbol UNIT SE Forward Current Per Chip IF 20 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 80 mA Power Dissipation Per Chip PD 80 mW Ir 10 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode or anode Material Emitted CHIP PART NO △λ Vf(v) (nm) Iv(mcd) IV-M Min. Typ. Max. Min. Typ. Common Cathode LMD6711ASE-XX GaAsP/GaP Orange LMD6712ASE-XX Electrical λP (nm) 610 45 1.7 2.1 Common Anode Note : 1.The forward voltage data did not including ± 0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 2.6 2.35 4.0 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LMD6711/2ASE-XX Page 5/7 Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Peak Wavelength λp nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M 器具規格 1. 素子規格 (1) 表示素子 (2) 表示色 (3) 輝度 (4) 壽命 (5) 光亮度 2. 表示器規格 (1) 輝度 (2) 光亮度 ----LED ----橘紅色 ----250cd ( 周圍照度 0 Lux 時) ---- 輝度半減期 50.000 Hr ----無規定 (1dot 內光亮平均 ) ---- 表示器內及同一 LOT內之表示器 ,輝度無規定 . ( 鄰接 DOT 之輝度差 50% 以下) ----無規定 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LMD6711/2ASE-XX Page6/7 Typical Electro-Optical Characteristics Curve SE CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0.5 0.0 2.0 1.0 3.0 4.0 5.0 1.0 10 Fig.3 Forward Voltage vs. Temperature Fig.4 Relative Intensity vs. Temperature 3.0 Relative Intensity@20mA Normalize @25℃ 1.2 Forward Voltage@20mA Normalize @25℃ 1000 Forward Current(mA) Forward Voltage(V) 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 550 600 650 Wavelength (nm) 700 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA 100 750 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 7/7 PART NO. LMD6711/2ASE-XX Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95 % 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11