Fairchild MMBF170 N-channel enhancement mode field effect transistor Datasheet

April 1995
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
High density cell design for low RDS(ON).
These
N-Channel enhancement mode field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
_______________________________________________________________________________
D
G
S
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
Parameter
BS170
VDSS
Drain-Source Voltage
60
V
VDGR
Drain-Gate Voltage (RGS < 1MΩ)
60
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current - Continuous
Units
500
500
1200
800
Maximum Power Dissipation
830
300
mW
Derate Above 25°C
6.6
2.4
mW/°C
- Pulsed
PD
MMBF170
mA
TJ,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
TL
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistacne, Junction-to-Ambient
© 1997 Fairchild Semiconductor Corporation
150
417
°C/W
BS170 Rev. C / MMBF170 Rev. D
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
60
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 100 µA
All
IDSS
Zero Gate Voltage Drain Current
VDS = 25 V, VGS = 0 V
All
0.5
µA
V
IGSSF
Gate - Body Leakage, Forward
VGS = 15 V, VDS = 0 V
All
10
nA
All
2.1
3
V
5
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 1 mA
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 200 mA
All
1.2
gFS
Forward Transconductance
VDS = 10 V, ID = 200 mA
BS170
320
MMBF170
320
All
24
40
pF
All
17
30
pF
All
7
10
pF
ns
VDS > 2 VDS(on), ID = 200 mA
0.8
Ω
mS
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
SWITCHING CHARACTERISTICS (Note 1)
ton
toff
Turn-On Time
Turn-Off Time
VDD = 25 V, ID = 200 m A,
VGS = 10 V, RGEN = 25 Ω
BS170
10
VDD = 25 V, ID = 500 mA,
VGS = 10 V, RGEN = 50 Ω
MMBF170
10
VDD = 25 V, ID = 200 m A,
VGS = 10 V, RGEN = 25 Ω
BS170
10
VDD = 25 V, ID = 500 mA,
VGS = 10 V, RGEN = 50 Ω
MMBF170
10
ns
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
BS170 Rev. C / MMBF170 Rev. D
Typical Electrical Characteristics
BS170 / MMBF170
2
3
9.0
V GS =4.0V
8.0
, DRAIN-SOURCE CURRENT (A)
7.0
RDS(on) , NORMALIZED
1.5
6.0
1
5.0
0.5
I
D
4.0
DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
3.0
0
0
1
2
3
V DS , DRAIN-SOURCE VOLTAGE (V)
4
5.0
6 .0
2
7.0
8.0
1.5
9.0
10
1
0.5
5
0
0.8
1.2
I D , DRAIN CURRENT (A)
1.6
2
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current.
2
3
1.75
V GS = 10V
R DS(on) , NORMALIZED
ID = 500mA
1.5
1.25
1
0.75
0.5
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
DRAIN-SOURCE ON-RESISTANCE
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0.4
Figure 1. On-Region Characteristics.
V G S = 10V
2.5
TJ = 125°C
2
1.5
25°C
1
-55°C
0.5
0
150
0
Figure 3. On-Resistance Variation
with Temperature.
0.4
0.8
1.2
I D , DRAIN CURRENT (A)
1.6
2
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
1.1
VDS = 10V
T J = -55°C
25°C
125°C
Vth , NORMALIZED
1.6
1.2
0.8
0.4
0
0
2
V
GS
4
6
8
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
10
GATE-SOURCE THRESHOLD VOLTAGE
2
ID , DRAIN CURRENT (A)
4.5
2.5
V DS = VGS
I D = 1 mA
1.05
1
0.95
0.9
0.85
0.8
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
150
Figure 6. Gate Threshold Variation with
Temperature.
BS170 Rev. C / MMBF170 Rev. D
Typical Electrical Characteristics (continued)
BS170 / MMBF170
2
ID = 100µA
1.05
1.025
1
0.975
0.95
0.925
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
0.5
TJ = 125°C
0.1
25°C
0.05
-55°C
0.01
0.005
0.001
0.2
150
0.4
0.6
V SD
0.8
1
1.2
1.4
, BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Body Diode Forward Voltage Variation with
Current and Temperature.
Figure 7. Breakdown Voltage Variation
with Temperature.
10
60
40
V GS , GATE-SOURCE VOLTAGE (V)
20
C oss
10
5
C rss
f = 1 MHz
V GS = 0V
2
V DS = 25V
ID = 5 0 0 m A
C iss
CAPACITANCE (pF)
V GS = 0V
1
1.075
IS , REVERSE DRAIN CURRENT (A)
, NORMALIZED
DSS
BV
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.1
1
8
6
4
2
0
1
2
3
V DS
5
10
20
30
50
0
0.4
0.8
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Capacitance Characteristics.
t on
t d(on)
R GEN
t d(off)
tf
90%
90%
V OUT
Output, Vout
10%
10%
90%
DUT
G
Input, Vin
S
Figure 11. Switching Test Circuit.
2
t off
tr
RL
D
VGS
1.6
Figure 10. Gate Charge Characteristics.
VDD
V IN
1.2
Q g , GATE CHARGE (nC)
Inverted
50%
50%
10%
Pulse Width
Figure 12. Switching Waveforms.
BS170 Rev. C / MMBF170 Rev. D
Typical Electrical Characteristics (continued)
10
ID , DRAIN CURRENT (A)
1
0.5
R
(
DS
)
ON
Lim
it
1m
3
2
0u
10
s
1
I D , DRAIN CURRENT (A)
3
2
s
10
ms
10
0m
s
1s
0.1
10
0.05
s
DC
V GS = 10V
SINGLE PULSE
RD
S(
O
it
1m
10
0.1
10
0.05
0.01
0m
0u
s
s
ms
s
1s
10
s
DC
V GS = 10V
SINGLE PULSE
T A = 25°C
0.01
0.5
Lim
N)
T A = 25°C
0.005
0.005
1
2
5
10
20
30
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 13. BS170 Maximum
Safe Operating Area.
60
80
1
2
5
10
20
30
V DS , DRAIN-SOURCE VOLTAGE (V)
60
80
Figure 14. MMBF170 Maximum
Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.5
R θJA (t) = r(t) * R θJA
θJA = (See Datasheet)
0.2
0.2
R
0.1
0.1
P(pk)
0.05
0.05
t1
0.02
JA (t)
Single Pulse
0.02
0.01
0.0001
0.001
t2
TJ - T A = P * Rθ
0.01
Duty Cycle, D = t1 /t2
0.01
0.1
t 1, TIME (sec)
1
10
100
300
Figure 15. TO-92, BS170 Transient Thermal Response Curve.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
D = 0.5
0.2
0.2
0.1
0.05
R θJA (t) = r(t) * R θJA
0.1
R
θJA = (See Datasheet)
0.05
0.02
P(pk)
0.01
t1
0.01
t2
Single Pulse
TJ - T A = P * Rθ
JA (t)
Duty Cycle, D = t1 /t2
0.002
0.001
0.0001
0.001
0.01
0.1
t1 , TIME (sec)
1
10
100
300
Figure 16. SOT-23, MMBF170 Transient Thermal Response Curve.
BS170 Rev. C / MMBF170 Rev. D
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D0
D1
E1
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1.55
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1.125
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512 +0.020/-0.008
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2.165
55
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Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G