DMG7401SFG P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary RDS(ON) max ID max TA = +25°C 13mΩ @ VGS = -10V -9.8A 25mΩ @ VGS = -4.5V • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products • -7.0A Occupies just 33% of the board area occupied by SO-8 enabling smaller end product Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data ideal for high efficiency power management applications. • Case: POWERDI3333 Applications • • Backlighting • • Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions • • Terminal Connections Indicator: See diagram DC-DC Converters • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Weight: 0.0174 grams (approximate) Drain POWERDI3333 S Pin 1 S S G Gate D ESD PROTECTED Top View D D Gate Protection Diode D Source Equivalent Circuit Bottom View Ordering Information (Note 4) Part Number DMG7401SFG-7 DMG7401SFG-13 Notes: Case POWERDI3333 POWERDI3333 Packaging 2000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YYWW NEW PRODUCT V(BR)DSS -30V Features and Benefits G75 = Product marking code YYWW = Date code marking YY = Last digit of year (ex: 10 for 2010) WW = Week code (01 – 53) G75 POWERDI is a registered trademark of Diodes Incorporated DMG7401SFG Document number: DS35623 Rev. 11 - 2 1 of 6 www.diodes.com April 2014 © Diodes Incorporated DMG7401SFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT Continuous Drain Current (Note 6) VGS = -10V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value -30 ±25 -9.8 -7.7 ID A -13.5 -10.8 -3.0 -80 14 104 ID Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10µs pulse, duty cycle = 1%) Avalanche Current (Notes 7 & 8) Repetitive Avalanche Energy (Notes 7 & 8) L = 1mH Units V V IS IDM IAR EAR A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Symbol TA = +25°C TA = +70°C Steady State t<10s TA = +25°C TA = +70°C Steady State t<10s Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range PD RθJA PD RθJA RθJC TJ, TSTG Value 0.94 0.6 137 82 2.2 1.3 60 36 3.0 -55 to +150 Units W °C/W °C/W W °C/W °C/W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 — — — — — — -1 ±10 V μA μA VGS = 0V, ID = -250μA VDS = -30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) -3.0 11 13 25 — mΩ |Yfs| — 9 10 17 21 V Static Drain-Source On-Resistance -1.7 — — — — VDS = VGS, ID = -250μA VGS = -20V, ID = -12A VGS = -10V, ID = -9A VGS = -4.5V, ID = -5A VDS = -5V, ID = -10A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf — — — — — — — — — — — — 2246 352 294 5.1 20.5 41 7.6 8.0 11.3 15.4 38.0 22.0 2987 468 391 10 30 58 23 31 61 38 pF pF pF Ω nC nC nC nC ns ns ns ns VSD trr Qrr — — — -0.7 20 9.5 -1.0 31 18 V ns nC Forward Transfer Admittance DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time BODY DIODE CHARACTERISTICS Diode Forward Voltage Reverse Recovery Time (Note 9) Reverse Recovery Charge (Note 9) Notes: S Test Condition VDS = -15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VDS = -15V, ID = -12A VDD = -15V, VGS = -10V, RL = 1.25Ω, RG = 3Ω, VGS = 0V, IS = -1A IS = -9.5A, dI/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect 9. Guaranteed by design. Not subject to product testing POWERDI is a registered trademark of Diodes Incorporated DMG7401SFG Document number: DS35623 Rev. 11 - 2 2 of 6 www.diodes.com April 2014 © Diodes Incorporated 30 25 25 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 30 VGS = 10V 20 VGS = 5.0V VGS = 4.5V 15 VGS = 4.0V 10 VGS = 3.5V 20 15 10 TA = 150°C 0 0.5 1.0 1.5 -VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics 0 1.0 2.0 0.03 0.02 0.01 0 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage T A = 25°C RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.5 1.3 1.1 0.9 0.7 1.5 2.0 2.5 3.0 3.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 4.0 0.03 VGS= -4.5V TA = 150°C TA = 125°C TA = 85°C 0.02 TA = 25°C TA = -55° C 0.01 0 30 1.7 0.5 -50 TA = 85°C TA = 125 °C T A = -55°C VGS = 3.0V RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω) RDS(ON),DRAIN-SOURCE ON-RESISTANCE(Ω) 0 VDS = -5.0V 5 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) NEW PRODUCT DMG7401SFG 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.040 0.036 0.032 0.028 VGS = -4.5V ID = -5A 0.024 0.020 0.016 0.012 VGS = -10V ID = -10A 0.008 0.004 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated DMG7401SFG Document number: DS35623 Rev. 11 - 2 3 of 6 www.diodes.com April 2014 © Diodes Incorporated 30 2.5 25 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE(V) 3.0 2.0 1.5 1.0 20 15 10 0.5 5 0 -50 0 0.4 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 10,000 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 10 -VGS, GATE-SOURCE VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) f = 1MHz C iss 1,000 Coss Crss 100 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 300 6 4 2 0 5 10 15 20 25 30 35 40 Qg, TOTAL GATE CHARGE (nC) Fig. 10 Gate-Charge Characteristics 45 100 RDS(on) Limited Single Pulse RθJA = 135°C/W RθJA(t) = r(t) * RθJA TJ - TA = P * RθJA(t) -ID, DRAIN CURRENT (A) 350 8 0 30 400 P(PK), PEAK TRANSIENT POIWER (W) NEW PRODUCT DMG7401SFG 250 200 150 100 50 0 1E-05 1E-04 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 11 Single Pulse Maximum Power Dissipation 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms 0.1 TJ(max) = 150°C TA = 25°C VGS = -10V Single Pulse DUT on 1 * MRP Board 0.01 0.01 PW = 1ms PW = 100µs 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area 100 POWERDI is a registered trademark of Diodes Incorporated DMG7401SFG Document number: DS35623 Rev. 11 - 2 4 of 6 www.diodes.com April 2014 © Diodes Incorporated DMG7401SFG r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 135°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIMES (sec) Fig. 13 Transient Thermal Resistance 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A POWERDI3333-8 Dim Min Max Typ D 3.25 3.35 3.30 E 3.25 3.35 3.30 D2 2.22 2.32 2.27 E2 1.56 1.66 1.61 A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 0.203 − − b 0.27 0.37 0.32 b2 0.20 − − L 0.35 0.45 0.40 L1 0.39 − − e 0.65 − − Z 0.515 − − All Dimensions in mm A3 A1 D D2 Pin 1 ID 1 L (4x) 4 b2 (4x) E E2 8 Z (4x) 5 e L1 (3x) b (8x) Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X G Y2 8 5 G1 Y1 Y 1 4 Y3 X2 Dimensions C G G1 Y Y1 Y2 Y3 X X2 Value (in mm) 0.650 0.230 0.420 3.700 2.250 1.850 0.700 2.370 0.420 C POWERDI is a registered trademark of Diodes Incorporated DMG7401SFG Document number: DS35623 Rev. 11 - 2 5 of 6 www.diodes.com April 2014 © Diodes Incorporated DMG7401SFG IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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