ON MBD110DWT1G Dual schottky barrier diode Datasheet

MBD110DWT1G,
MBD330DWT1G,
MBD770DWT1G
Dual Schottky Barrier
Diodes
Application circuit designs are moving toward the consolidation of
device count and into smaller packages. The new SOT−363 package is a
solution which simplifies circuit design, reduces device count, and reduces
board space by putting two discrete devices in one small six−leaded
package. The SOT−363 is ideal for low−power surface mount applications
where board space is at a premium, such as portable products.
Anode 1
SOT−363
(mm2)
Max Package PD (mW)
Device Count
N/C 2
5 N/C
4.6
7.6
120
225
2
1
1
1 x SOT−23
2 x SOT−23
40%
70%
SOT−363
4 Anode
SOT−23
SC−88 / SOT−363
CASE 419B
STYLE 6
Space Savings:
Package
6 Cathode
Cathode 3
Surface Mount Comparisons:
Area
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MARKING DIAGRAM
The MBD110DW, MBD330DW, and MBD770DW devices are
spin−offs of our popular MMBD101LT1, MMBD301LT1, and
MMBD701LT1 SOT−23 devices. They are designed for high−efficiency
UHF and VHF detector applications. Readily available to many other fast
switching RF and digital applications.
Features
•
•
•
•
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
6
xx M G
G
1
xx
= Device Code
Refer to Ordering Table,
page 2
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
MBD110DWT1G
MBD330DWT1G
MBD770DWT1G
VR
7.0
30
70
V
Forward Current (DC)
MBD330DWT1G
IF
200 Max
mA
Forward Power Dissipation TA = 25°C
PF
120
mW
Junction Temperature
TJ
−55 to +125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2011
September, 2011 − Rev. 7
1
Publication Order Number:
MBD110DWT1/D
MBD110DWT1G, MBD330DWT1G, MBD770DWT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage
(IR = 10 mA)
MBD110DWT1G
MBD330DWT1G
MBD770DWT1G
Diode Capacitance
(VR = 0, f = 1.0 MHz, Note 1)
MBD110DWT1G
Total Capacitance
(VR = 15 Volts, f = 1.0 MHz)
(VR = 20 Volts, f = 1.0 MHz)
MBD330DWT1G
MBD770DWT1G
Reverse Leakage
(VR = 3.0 V)
(VR = 25 V)
(VR = 35 V)
MBD110DWT1G
MBD330DWT1G
MBD770DWT1G
Noise Figure
(f = 1.0 GHz, Note 2)
MBD110DWT1G
Forward Voltage
(IF = 10 mA)
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 1.0 mA)
(IF = 10 mA)
MBD110DWT1G
MBD330DWT1G
V(BR)R
CD
CT
IR
NF
VF
MBD770DWT1G
Min
Typ
Max
7.0
30
70
10
−
−
−
−
−
−
0.88
1.0
−
−
0.9
0.5
1.5
1.0
−
−
−
0.02
13
9.0
0.25
200
200
−
6.0
−
−
−
−
−
−
0.5
0.38
0.52
0.42
0.7
0.6
0.45
0.6
0.5
1.0
Unit
V
pF
pF
mA
nA
nA
dB
V
ORDERING INFORMATION
Device
Marking
Package
M4
SC−88 / SOT−363
(Pb−Free)
T4
SC−88 / SOT−363
(Pb−Free)
H5
SC−88 / SOT−363
(Pb−Free)
MBD110DWT1G
MBD330DWT1G
MBD770DWT1G
Shipping†
3000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MBD110DWT1G, MBD330DWT1G, MBD770DWT1G
TYPICAL CHARACTERISTICS
MBD110DWT1G
100
IF, FORWARD CURRENT (mA)
IR, REVERSE LEAKAGE (m A)
1.0
0.7
0.5
VR = 3.0 V
0.2
0.1
0.07
0.05
10
TA = 85°C
TA = -40°C
1.0
0.02
TA = 25°C
MBD110DWT1G
0.01
30
40
50
60
70
80
90 100 110
TA, AMBIENT TEMPERATURE (°C)
120
MBD110DWT1G
0.1
0.3
130
0.4
Figure 1. Reverse Leakage
0.8
11
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
(Test Circuit Figure 5)
10
9
0.9
NF, NOISE FIGURE (dB)
C , CAPACITANCE (pF)
D
0.7
Figure 2. Forward Voltage
1.0
0.8
0.7
8
7
6
5
4
3
2
MBD110DWT1G
0.6
0.5
0.6
VF, FORWARD VOLTAGE (VOLTS)
0
1.0
2.0
3.0
VR, REVERSE VOLTAGE (VOLTS)
1
0.1
4.0
Figure 3. Capacitance
MBD110DWT1G
0.2
0.5
1.0
2.0
5.0
PLO, LOCAL OSCILLATOR POWER (mW)
10
Figure 4. Noise Figure
LOCAL
OSCILLATOR
UHF
NOISE SOURCE
H.P. 349A
DIODE IN
TUNED
MOUNT
NOISE
FIGURE METER
H.P. 342A
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
NOTES ON TESTING AND SPECIFICATIONS
Note 1 − CD and CT are measured using a capacitance
bridge (Boonton Electronics Model 75A or equivalent).
Note 2 − Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator
(LO) frequency of 1.0 GHz. The LO power is adjusted
for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see
Figure 5.
Note 3 − LS is measured on a package having a short instead
of a die, using an impedance bridge (Boonton Radio
Model 250A RX Meter).
Figure 5. Noise Figure Test Circuit
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3
MBD110DWT1G, MBD330DWT1G, MBD770DWT1G
TYPICAL CHARACTERISTICS
MBD330DWT1G
2.8
500
t , MINORITY CARRIER LIFETIME (ps)
CT, TOTAL CAPACITANCE (pF)
MBD330DWT1G
f = 1.0 MHz
2.4
2.0
1.6
1.2
0.8
0.4
0
MBD330DWT1G
400
KRAKAUER METHOD
300
200
100
0
0
3.0
6.0
9.0
12
15
18
21
VR, REVERSE VOLTAGE (VOLTS)
24
27
30
0
Figure 6. Total Capacitance
20
40
60
30
50
70
IF, FORWARD CURRENT (mA)
80
90
100
Figure 7. Minority Carrier Lifetime
10
100
MBD330DWT1G
IF, FORWARD CURRENT (mA)
MBD330DWT1G
IR, REVERSE LEAKAGE ( m A)
10
TA = 100°C
1.0
TA = 75°C
0.1
TA = 85°C
1.0
TA = 25°C
0.01
TA = -40°C
10
0.001
TA = 25°C
0.1
0
6.0
12
18
VR, REVERSE VOLTAGE (VOLTS)
24
30
0.2
Figure 8. Reverse Leakage
0.4
0.6
0.8
VF, FORWARD VOLTAGE (VOLTS)
Figure 9. Forward Voltage
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4
1.0
1.2
MBD110DWT1G, MBD330DWT1G, MBD770DWT1G
TYPICAL CHARACTERISTICS
MBD770DWT1G
2.0
500
t , MINORITY CARRIER LIFETIME (ps)
CT, TOTAL CAPACITANCE (pF)
MBD770DWT1G
f = 1.0 MHz
1.6
1.2
0.8
0.4
0
MBD770DWT1G
400
KRAKAUER METHOD
300
200
100
0
0
5.0
10
15
20
25
30
35
VR, REVERSE VOLTAGE (VOLTS)
40
45
50
0
10
Figure 10. Total Capacitance
30
40
50
60
70
IF, FORWARD CURRENT (mA)
80
90
100
Figure 11. Minority Carrier Lifetime
10
100
MBD770DWT1G
MBD770DWT1G
IF, FORWARD CURRENT (mA)
IR, REVERSE LEAKAGE ( m A)
20
TA = 100°C
1.0
TA = 75°C
0.1
10
TA = 85°C
TA = -40°C
1.0
0.01
TA = 25°C
0.001
TA = 25°C
0.1
0
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
40
0.2
50
Figure 12. Reverse Leakage
0.4
0.8
1.2
VF, FORWARD VOLTAGE (VOLTS)
Figure 13. Forward Voltage
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5
1.6
2.0
MBD110DWT1G, MBD330DWT1G, MBD770DWT1G
PACKAGE DIMENSIONS
SC−88 / SC−70 / SOT−363
CASE 419B−02
ISSUE W
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
e
6
5
4
HE
DIM
A
A1
A3
b
C
D
E
e
L
HE
−E−
1
2
3
b 6 PL
0.2 (0.008)
M
E
M
A3
STYLE 6:
PIN 1.
2.
3.
4.
5.
6.
C
A
A1
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
ANODE 2
N/C
CATHODE 1
ANODE 1
N/C
CATHODE 2
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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MBD110DWT1/D
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