B120 thru B160 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AC (SMA) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 20 V to 60 V IFSM 30 A VF 0.52 V, 0.75 V TJ max. 125 °C, 150 °C Note • These devices are not AEC-Q101 qualified MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code B120 B130 B140 B150 B160 B12 B13 B14 B15 B16 20 30 40 50 60 UNIT Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A Voltage rate of change (rated VR) Operating junction temperature range Storage temperature range Revision: 27-Mar-12 dV/dt TJ TSTG 10 000 - 65 to + 125 - 65 to + 150 V V/μs - 65 to + 150 °C °C Document Number: 88946 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 B120 thru B160 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 1.0 A SYMBOL B120 B130 VF (1) TA = 25 °C Maximum reverse current at rated VR TA = 100 °C B140 B150 0.52 B160 0.75 V 0.2 IR (2) 6.0 UNIT mA 5.0 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance B120 B130 B140 RJA (1) 95 RJL (1) 30 B150 B160 UNIT °C/W Note (1) P.C.B. mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE B140-E3/61T 0.064 61T 1800 7" diameter plastic tape and reel B140-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 0.8 Resistive or Inductive Load B120 thru B140 B150 and B160 0.8 B120 thru B140 0.6 0.4 P.C.B. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) Copper Pad Areas 0.2 D = 0.8 0.7 1.0 Average Power Loss (W) Average Forward Rectified Current (A) 1.2 D = 0.5 0.6 D = 0.3 0.5 D = 1.0 D = 0.2 D = 0.1 0.4 0.3 T 0.2 0.1 0 D = tp/T tp 0.8 1.0 0 0 25 50 75 100 125 150 0 0.2 0.4 0.6 1.2 Lead Temperature (°C) Average Forward Current Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 27-Mar-12 Document Number: 88946 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 B120 thru B160 www.vishay.com Vishay General Semiconductor 0.8 10 D = 0.8 0.7 Average Power Loss (W) Instantaneous Forward Current (A) B150 and B160 D = 0.5 0.6 D = 0.3 0.5 D = 1.0 D = 0.2 D = 0.1 0.4 0.3 T 0.2 0.1 D = tp/T tp TJ = 125 °C 1 TJ = 25 °C 0.1 B150 and B160 0.01 0 0 0.2 0.4 0.6 0.8 1.0 0 1.2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Average Forward Current (A) Instantaneous Forward Voltage (V) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Typical Instantaneous Forward Characteristics 100 000 Instantaneous Reverse Current (μA) 40 Peak Forward Surge Current (A) TJ = 150 °C 30 20 10 B120 thru B140 B150 and B160 TJ = 150 °C 10 000 1000 100 TJ = 125 °C TJ = 25 °C 10 1 0.1 0 1 10 100 10 20 30 40 50 60 70 80 90 100 Number of Cycles at 50 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Instantaneous Forward Characteristics Fig. 7 - Typical Reverse Leakage Characteristics TJ = 150 °C 1000 TJ = 125 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 10 1 TJ = 25 °C 0.1 B120 thru B140 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 B120 thru B140 B150 and B160 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Instantaneous Forward Voltage (V) 10 0.1 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Instantaneous Forward Characteristics Fig. 8 - Typical Junction Capacitance Revision: 27-Mar-12 Document Number: 88946 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 B120 thru B160 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 27-Mar-12 Document Number: 88946 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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