MITSUBISHI IGBT MITSUBISHI IGBT CY25AAJ-8F CY25AAJ-8F IGBT STROBE FLASHER NchNch IGBT for for STROBE FLASHER CY25AAJ-8F OUTLINE DRAWING Dimensions in mm ➄ ➀ ➃ 6.0 4.4 ➇ 1.8 MAX. 5.0 0.4 1.27 ➄➅➆➇ ➃ ● VCES ............................................................................... 400V ● ICM ................................................................................... 150A ● Drive voltage ..................................................................... 4V ➀ ➁ ➂ EMITTER ➃ GATE ➄ ➅ ➆ ➇ COLLECTOR ➀➁➂ SOP-8 APPLICATION Strobe Flasher for camera MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VCES VGES Collector-emitter voltage Gate-emitter voltage Parameter VGE = 0V VCE = 0V Conditions 400 ±6 V V VGEM ICM Peak gate-emitter voltage Collector current (Pulsed) VCE = 0V, tw = 10s CM = 400µF see figure1 ±8 150 V A Tj Tstg Junction temperature Storage temperature –40 ~ +150 –40 ~ +150 °C °C Sep. 2000 MITSUBISHI IGBT CY25AAJ-8F Nch IGBT for STROBE FLASHER ELECTRICAL CHARACTERISTICS Symbol (Tj = 25°C) Parameter Limits Test conditions V (BR) CES Collector-emitter breakdown voltage V (BR) GES Gate-emitter breakdown voltage ICES IGES Collector-emitter leakage current Gate-emitter leakage current VGE (th) Gate-emitter threshold voltage IC = 1mA, VGE = 0V IG = ±100µA, VCE = 0V VCE = 400V, VGE = 0V VGE = ±6V, VCE = 0V VCE = 10V, IC = 1mA Unit Min. Typ. Max. 450 ±8 — — — — V V — — — — 10 ±10 µA µA — — 1.5 V PULSE COLLECTOR CURRENT ICM (A) Figure1. MAXIMUM PULSE COLLECTOR CURRENT 200 CM = 400µF 150 00 50 0 0 2 4 6 8 GATE-EMITTER VOLTAGE VGE (V) APPLICATION EXAMPLE TRIGGER SIGNAL Vtrig IXe CM IGBTE GATE VG VOLTAGE + Vtrig – VCM RG VCE VG Xe TUBE CURRENT IXE IGBT Sep. 2000