Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics 5 Device Package and Frequency Listings IGBT / CoPack Quarterly Reliability Report Page 2 of 35 Introduction The reliability report is a summary of the test data collated since the implementation of the reliability programme. This report will be periodically updated typically on a quarterly basis. Future publications of this report will also include as appropriate additional information to assist the user in the interpretation of the data provided. The programme covers only IGBT / CoPack manufactured products at IRGB, Holland Road, Oxted. The reliability data provided in this report are for the package types TO247 and TO220. Further information regarding reliability data is available in the IR data book IGBT-3, pages E-65-E-72. This also, is available from the Oxted office. Reliability Engineering _____________________________________ Quality Manager _____________________________________ Date _____________________________________ IGBT / CoPack Quarterly Reliability Report Page 3 of 35 Section 2 Reliability Information IGBT / CoPack Quarterly Reliability Report Page 4 of 35 Fit Rate / Equivalent Device Hours Traditionally, reliability results have been presented in terms of Mean-Time-To-Failure or Median-Time-To-Failure. While these results have their value, they do not necessarily tell the designer what he most needs to know. For example, the MedianTime-To-Failure tells the engineer how long it will take for half a particular lot of devices to fail. Clearly no designer wishes to have a 50% failure rate within a reasonable equipment lifetime. Of greater interest, therefore, is the time to failure of a much smaller percentage of devices say 1% or 0.1%. For example, in a given application one failure per hundred units over five years is an acceptable failure rate for the equipment, the designer knows that time to accumulate 1% failure of that components per unit, then no more than 0.1% of the components may fail in five years. Therefore, the IGBT / CoPack reliability or operating-life data is presented in terms of the time it will take to produce a prescribed number of failures under given operating conditions. To obtain a perspective of failure rate from an example, let us assume that an electronic system contains 1,000 semiconductor devices, and that it can tolerate 1% system failures per month. The equation for the device failure is: λ = Proportion allowed system failures Time period X 1 No. of devices X 109 X 1 1000 Devices = 109 = FITS In the case of the example, λ= 0.01 Failures 720 Hours = 14 FITS or 14 FITs or 14 failures per 109 devices hours. IGBT / CoPack Quarterly Reliability Report Page 5 of 35 Using IGBT Reliability Information Reliability is the probability that a semiconductor device will perform its specified function in a given environment for a specified period of time. Reliability is quality over time & environmental conditions. Reliability can be defined as a probability of failure-free performance of a required function, under a specified environment, for a given period of time. The reliability of semiconductors has been extensively studied and the data generated from these works is widely used in industry to estimate the probabilities of system lifetimes. The reliability of a specific semiconductor device is unique to the technology process used in fabrication and to the external stress applied to the device. In order to understand the reliability of specific product like the IGBT it is useful to determine the failure rate associated with each environmental stress that IGBT's encounter. The values reported in this report are at a 60% upper confidence limit and the equivalent device hours at state of working temperature of 90°C. It has been shown that the failure rate of semiconductors in general. when followed for a long period of time, exhibits what has been called a "Bathtub Curve" when plotted against time for a given set of environmental conditions. Classic Bathtub Curve for failure rate of solid state devices Log Failure λ(t) Infant Failures Wearout Failures Random Failures Log Time IGBT / CoPack Quarterly Reliability Report t Page 6 of 35 The IGBT Structure The silicon cross-section of an Insulated Gate Bipolar Transistor (IGBT), the terminal called Collector is, actually, the Emitter of the PNP. In spite of its similarity to the cross-section of a power MOSFET, operating of the two transistors is fundamentally different, the IGBT being a minority carrier device. Except for the P + substrate is virtually identical to that of a power MOSFET, both devices share a similar polysilicon gate structure and P wells with N + source contacts. In both devices the N-type material under the P wells is sized in thickness and reistivity to sustain the full voltage rating of the device. However, in spite of the many similarities, he physical operation of the IGBT is closer to that of a bipolar transistor than to that of a power MOSFET. This is due to the P + substrate which is responsible for the minority carrier injection into the N regtion and the resulting conductivity modulation, a significant share of the conduction losses occur in the N region, typically 70% in a 500v device. The part number itself contains in coded form the key features of the IGBT. An explanation of the nomenclature in contained below. IR G 4 B C 4 0 S D International Rectifier IGBT Generation Package Designator B T0220 P T0247 Voltage Designator C 600v E 800v F 900v G 1000v H 1200v Diode Speed Designator S Standard Modifier F Fast Die Size M Short Cicuit Fast U UltraFast K Short Circuit UltraFast Basic IGBT Structure IGBT / CoPack Quarterly Reliability Report Page 7 of 35 Section 3 Environmental Test Results IGBT / CoPack Quarterly Reliability Report Page 8 of 35 HIGH TEMPERATURE REVERSE BIAS (HTRB) T0247 Package Junction Temperature : Tj = as specified below Applied Bias: Vge = 0V Vce = 80% of maximum rated BVces N Channel DEVICE TYPE IRGPC30FD2 IRGPC50FD2 MID FREQUENCY ( Fast ) DATE CODE 9344 9237 FAILURES ACTUAL TEST TIME # MODE (hours) (note b) 20 1080 0 59 2008 0 TEMP VOLTAGE QTY MAX (deg C) 150 150 (V) 600 600 TOTALS 79 N Channel DEVICE TYPE IRGPC40U IRGPC40U IRGPC40UD2 IRG4PC40UD2 IRGPC50UD2 IRGPH60UD2 3088 0 EQUIVALENT FAILURE RATE @ DEV-HRS 90°C & 60% UCL @ 90°C FITs (note a) 2.01E+06 456 1.10E+07 83 1.30E+07 70 HIGH FREQUENCY ( Ultra-Fast ) DATE CODE 9538 9620 9237 9643 9346 9450 TEMP VOLTAGE QTY MAX (deg C) 150 150 150 150 150 150 TOTALS (V) 600 600 600 600 600 1200 20 20 20 20 20 10 110 ACTUAL TEST TIME (hours) 2008 2008 1008 2030 1080 1008 EQUIVALENT FAILURE RATE @ DEV-HRS 90°C & 60% UCL @ 90°C MODE FITs (note b) (note a) 3.73E+06 245 3.73E+06 245 1.87E+06 489 3.78E+06 243 2.01E+06 456 9.37E+05 977 FAILURES # 0 0 0 0 0 0 9142 0 1.61E+07 57 NOTES a. One FIT represents one failure in one billion (1.0E+09) hours. b. FAILURE MODES: IGBT / CoPack Quarterly Reliability Report Page 9 of 35 HIGH TEMPERATURE REVERSE BIAS (HTRB) T0220 Package Junction Temperature: Tj = as specified below Applied Bias: Vge = 0V Vce = 80% of maximum rated BVces N Channel DEVICE TYPE IRGBC20S IRGBC40S LOW FREQUENCY ( Standard ) EQUIVALENT FAILURE RATE @ FAILURES DEV-HRS 90°C & 60% UCL DATE TEMP VOLTAGE QTY ACTUAL CODE MAX TEST @ 90°C TIME # MODE FITs (deg C) (V) (hours) (note b) (note a) 9544 150 600 20 2008 0 3.73E+06 245 9606 150 600 20 2008 0 3.73E+06 245 TOTALS 40 N Channel DEVICE TYPE IRGBC30F IRGNC30FD2 IRGBF30F 4016 0 7.47E+06 123 MID FREQUENCY ( Fast ) DATE CODE TEMP VOLTAGE QTY MAX (deg C) 9537 150 9640 150 9613 150 TOTALS (V) 600 600 900 ACTUAL TEST TIME (hours) 20 2008 20 2007 20 2008 60 EQUIVALENT FAILURE RATE @ DEV-HRS 90°C & 60% UCL @ 90°C MODE FITs (note b) (note a) 3.73E+06 245 3.73E+06 245 3.73E+06 245 FAILURES # 0 0 0 6023 0 1.12E+07 82 NOTES a. One FIT represents one failure in one billion (1.0E+09) hours. b. FAILURE MODES: IGBT / CoPack Quarterly Reliability Report Page 10 of 35 HIGH TEMPERATURE REVERSE BIAS (HTRB) T0220 Package Junction Temperature: Tj = as specified below Applied Bias: Vge = 0V Vce = 80% of maximum rated BVces N Channel DEVICE TYPE IRGBC20K IRGBC30U IRGB440U HIGH FREQUENCY ( Ultra-Fast ) DATE CODE TEMP VOLTAGE QTY MAX (deg C) 9613 150 9605 150 9643 150 TOTALS (V) 600 600 400 ACTUAL TEST TIME (hours) 20 2008 20 2008 20 2008 60 # 0 0 0 6024 0 EQUIVALENT FAILURE RATE @ FAILURES DEV-HRS 90°C & 60% UCL @ 90°C MODE FITs (note b) (note a) 3.73E+06 245 3.73E+06 245 3.73E+06 245 1.12E+07 82 NOTES a. One FIT represents one failure in one billion (1.0E+09) hours. b. FAILURE MODES: IGBT / CoPack Quarterly Reliability Report Page 11 of 35 HIGH TEMPERATURE GATE BIAS (HTGB) Junction Temperature: Tj = as specified below Vc = Ve = 0V Vg = as specified N Channel DEVICE TYPE IRGPF30F IRGPC50FD2 MID FREQUENCY ( Fast ) DATE CODE TEMP (deg C) 9642 150 9237 150 GATE BIAS (V) 20 20 TOTALS FAILURES ACTUAL TEST TIME # MODE (hours) (note b) 20 2007 0 20 2088 0 QTY 40 N Channel DEVICE TYPE IRGPC40U IRGPC40U IRG4PC50U IRG4PC40UD2 4095 0 DEV-HRS @ 90°C FAILURE RATE @ 90°C & 60% UCL FITs (note a) 2.46E+05 2.56E+05 3724 3579 5.02E+05 1825 HIGH FREQUENCY ( Ultra-Fast ) DATE CODE 9538 9620 9721 9643 TEMP GATE BIAS (deg C) 150 150 150 150 (V) TOTALS 20 20 20 20 QTY 20 20 20 20 80 ACTUAL TEST TIME (hours) 2008 2008 2213 2039 EQUIVALENT FAILURE RATE @ DEV-HRS 90°C & 60% UCL @ 90°C MODE FITs (note b) (note a) 2.46E+05 3722 2.46E+05 3722 2.71E+05 3377 2.50E+05 3665 FAILURES # 0 0 0 0 8268 0 1.01E+06 904 NOTES a. One FIT represents one failure in one billion (1.0E+09) hours. b. FAILURE MODES: IGBT / CoPack Quarterly Reliability Report Page 12 of 35 HIGH TEMPERATURE GATE BIAS (HTGB) Junction Temperature: Tj = as specified below Vc = Ve = 0V Vg = as specified N Channel LOW FREQUENCY ( Standard ) FAILURE RATE @ DEVICE TYPE TEMP GATE BIAS (deg C) IRGBC20S IRGBC40S 9544 9605 20 20 TOTALS FAILURES ACTUAL TEST TIME # (hours) (note b) 20 0 20 0 40 N Channel 0 FITs 2.46E+05 2.46E+05 4.92E+05 MID FREQUENCY ( Fast ) DATE TEMP TYPE QTY 0 0 0 0 EQUIVALENT FAILURE RATE @ DEV-HRS 90°C & 60% UCL @ 90°C MODE FITs (note a) 3722 3567 3724 3722 8118 0 921 ACTUAL BIAS (V) IRGBC30F IRGBC30FD2 IRGBC30FD2 IRGBF30F 150 150 150 150 TOTALS NOTES b. DEV-HRS FAILURE MODES: I Quarterly Reliability Report 20 20 20 20 TIME (hours) 2008 2095 2007 2008 HIGH TEMPERATURE GATE BIAS (HTGB) T0220 Package Junction Temperature: Tj = as specified below Applied Bias: Vc = Ve = 0V Vg = as specified N Channel DEVICE TYPE HIGH FREQUENCY ( Ultra-Fast ) DATE CODE 9613 9605 9641 9643 TEMP GATE BIAS (deg C) 150 150 150 150 (V) TOTALS 20 20 20 20 QTY 20 20 20 20 80 # EQUIVALENT FAILURE RATE @ DEV-HRS @ 90°C MODE FITs 0 0 0 0 3722 3722 3724 3639 8077 0 925 ACTUAL TEST TIME (hours) 2008 2008 2007 2054 NOTES a. One FIT represents one failure in one billion (1.0E+09) hours. b. FAILURE MODES: IGBT / CoPack Quarterly Reliability Report Page 14 of 35 TEMPERATURE & HUMIDITY (THB) T0247 Package Junction Temperature: 85°C Relative Humidity: 85% rh Applied Bias: Vge = 0V Vce = as specified N Channel MID FREQUENCY ( Fast ) DEVICE TYPE DATE COLLECTOR CODE VOLTAGE IRGPF30F 9642 (V) 100 TOTALS N Channel QTY 20 20 ACTUAL FAILURES TEST TIME # MODE (hours) (note b) 2000 0 2000 0 HIGH FREQUENCY ( Ultra-Fast ) DEVICE TYPE DATE COLLECTOR CODE VOLTAGE IRGPC40U IRGPC40U IRG4PC40UD2 IRGPH60UD2 9538 9620 9643 9450 TOTALS (V) 500 500 100 500 QTY 20 20 20 10 70 ACTUAL TEST TIME (hours) 1504 1504 2051 1008 FAILURES # 3 4 0 0 MODE (note b) 1 1 6067 7 NOTES b. FAILURE MODES: 1. 3 devices failed @ 1504hrs 85/85 and 4 devices failed @ 1552 HRS 85/85 all the failures were due to termination structure corrosion, caused by moisture ingression. IGBT / CoPack Quarterly Reliability Report Page 15 of 35 TEMPERATURE & HUMIDITY (THB) T0220 Package Junction Temperature: 85°C Relative Humidity: 85% rh Applied Bias: Vge = 0V Vce = as specified N Channel LOW FREQUENCY ( Standard ) DEVICE TYPE DATE COLLECTOR CODE VOLTAGE IRGBC20S IRGBC30S IRGBC40S (V) 500 100 500 9544 9643 9606 TOTALS N Channel QTY 20 20 20 ACTUAL TEST TIME (hours) 1008 2051 1008 60 FAILURES # MODE (note b) 0 0 0 4067 0 MID FREQUENCY ( Fast ) DEVICE TYPE DATE COLLECTOR CODE VOLTAGE IRGBC30F IRGBF30F IRGBC30FD2 9537 9613 9640 TOTALS (V) 600 900 100 QTY 20 20 20 60 ACTUAL TEST TIME (hours) 1008 1008 2051 FAILURES # 1 0 0 MODE (note b) 1 4067 1 NOTES b. FAILURE MODES: 1 1 device failed @ 1008hrs 85/85 it was due to termination structure corrosion, caused by moisture ingression. IGBT / CoPack Quarterly Reliability Report Page 16 of 35 TEMPERATURE & HUMIDITY (THB) T0220 Package Junction Temperature: 85°C Relative Humidity: 85% rh Applied Bias: Vge = 0V Vce = as specified N Channel HIGH FREQUENCY ( Ultra-Fast ) DEVICE TYPE DATE CODE IRG4BC30U IRGB440U IRGBC20K 9641 9643 9613 TOTALS COLLECTOR VOLTAGE (V) 100 100 500 QTY 20 20 20 60 ACTUAL TEST TIME (hours) 2000 2051 1008 FAILURES # 0 0 3 MODE (note b) 1 5059 3 NOTES b. FAILURE MODES: 1 3 devices failed @ 1008hrs 85/85 all the failures were due to termination structure corrosion, caused by moisture ingression. IGBT / CoPack Quarterly Reliability Report Page 17 of 35 TEMPERATURE CYCLING (T/C) Unbiased T0247 Package Temperature Cycle: Tmin = - 55°C, Tmax = + 150°C Cycle time: 25 minutes Bias None N Channel DEVICE TYPE MID / HIGH FREQUENCY DATE CODE QTY ACTUAL CYCLES FAILURES # IRGPC30FD2 IRGPC50FD2 IRGPC40U IRGPC40U IRGPC40UD2 IRG4PC40UD2 IRG4PC50U IRGPC50UD2 IRGPF30F IRGPH60UD2 TOTALS 9344 9237 9538 9620 9237 9643 9721 9346 9642 9450 39 80 20 20 40 20 20 38 20 10 1000 2174 2008 2055 1087 1496 2086 1000 2015 1044 307 15965 0 MODE (note b) 0 0 0 0 0 0 0 0 0 0 NOTES b. FAILURE MODES: IGBT / CoPack Quarterly Reliability Report Page 18 of 35 TEMPERATURE CYCLING (T/C) Unbiased T0220 Package Temperatre Cycle: Tmin = - 55°C, Tmax = + 150°C Cycle Time 25 minutes Bias None N Channel DEVICE TYPE LOW / MID / HIGH FREQUENCY DATE CODE QTY ACTUAL CYCLES FAILURES # IRGBC20S IRGBC40S IRGBC30S IRGBC30F IRGBF30F IRGBC20K IRGBC30U IRG4BC30U IRGB440U IRGBC30FD2 IRGBC30FD2 TOTALS 9544 9606 9643 9537 9613 9613 9605 9614 9643 9640 9643 20 20 20 20 20 20 20 20 20 20 20 2062 2008 2017 2008 2032 2032 2008 2015 2107 2077 2043 220 22409 0 MODE (note b) 0 0 0 0 0 0 0 0 0 0 0 NOTES b. FAILURE MODES: IGBT / CoPack Quarterly Reliability Report Page 19 of 35 POWER CYCLING (P/C) unbiased T0247 Package Bias: Set to give ∆ T = 100°C Temperature: Tj = ∆ 100°C Duration: 10000 Cycles Test Points: 2500, 5000, 10000 Nominal N Channel HIGH FREQUENCY ( Ultra-Fast ) FAILURES DEVICE TYPE IRGPC40U TOTALS DATE CODE 9620 QTY ACTUAL (hours) # 20 10000 0 20 10000 0 MODE (note b) NOTES b. FAILURE MODES: IGBT / CoPack Quarterly Reliability Report Page 20 of 35 ACCELERATED MOISTURE RESISTANCE (A/C) Unbiased T0247 Package Pressure: 15 Ibs psig Temperature: 121°C Humidity: 100% Bias: None N Channel MID / HIGH FREQUENCY FAILURES DEVICE TYPE IRGPF30F IRGPC40U IRGPC40U IRG4PC40UD2 IRG4PC50U TOTALS DATE CODE 9642 9538 9620 9643 9721 QTY ACTUAL (hours) # 20 20 20 20 20 96 96 96 96 96 100 480 0 MODE (note b) 0 0 0 0 0 NOTES b. FAILURE MODES: IGBT / CoPack Quarterly Reliability Report Page 21 of 35 ACCELERATED MOISTURE RESISTANCE (A/C) Unbiased T0220 Package Pressure: 15 Ibs psig Temperature: 121°C Humidity: 100% Bias: None N Channel LOW / MID / HIGH FREQUENCY FAILURES DEVICE TYPE IRGBC20S IRGBC30S IRGBC40S IRGBC30F IRGBF30F IRGBC20K IRGBC30U TOTALS DATE CODE 9544 9643 9606 9537 9613 9613 9606 QTY ACTUAL (hours) # 20 20 20 20 20 20 20 96 96 96 96 96 96 96 140 672 0 MODE (note b) 0 0 0 0 0 0 0 NOTES b. FAILURE MODES: IGBT / CoPack Quarterly Reliability Report Page 22 of 35 Section 4 Environmental Test Conditions / Schematics IGBT / CoPack Quarterly Reliability Report Page 23 of 35 HIGH TEMPERATURE REVERSE BIAS (HTRB) Test circuit Conditions Bias: Temperature: Duration: Test points: Vce = As required Tmax 2000 Hours nominal 168, 500, 1000, 1500, 2000, Hours nominal DUT D DC BIAS D = Diode for CoPack devices only Purpose High temperature reverse bias (HTRB) burn-in is to stress the devices with the applied voltage in the blocking mode while elevating the junction temperature. This will accelerate any blocking voltage degradation process. Failure Modes The primary failure mode for HTRB stress is a gradual degradation of the breakdown characteristics or V(BR)CES. This degradation has been attributed to the presence of foreign materials and polar/ionic contaminants. These materials, migrating under application of electric field at high temperature, can perturb the electric field termination structure. Extreme care must be exercised in the course of a long term test to avoid potential hazards such as electrostatic discharge or electrical overstress to the gate during test. Failures arising from this abuse can be virtually indistinguishable from true HTRB failures which results from the actual stress test. Sensitive Parameters V(BR)CES, ICES, IGES, VGE(th) IGBT / CoPack Quarterly Reliability Report Page 24 of 35 HIGH TEMPERATURE GATE BIAS (HTGB) Test circuit Conditions DUT Bias: Temperature: Duration: Test points: Vge = As required Tmax 2000 Hours nominal 168, 500, 1000, 1500, 2000 Hours nominal. D DC BIAS D = Diode for CoPack devices only Purpose The purpose of High Temperature Gate Bias is to stress the devices with the applied bias to the gate while at elevated junction temperature to accelerate time dependent dielectric breakdown of the gate structure. Failure Modes The primary failure modes for long term gate stress is a rupture of the gate oxide, causing either a resistive short between gate-to-emitter or gate-to-collector or what appears to be a low breakdown diode between the gate and source. The oxide breakdown has been attributed to the degradation in time of existing defects in the thermally grown oxide. These defects can take form of localized thickness variations, structural anomalies or the presence of sub-micron particulate, within the oxide. As with HTRB, extreme care must be exercised in the course of a long term test to avoid potential hazards such as electrostatic discharge or electrical overstress to the gate during test. Failures arising from this abuse are virtually indistinguishable from true oxide breakdown which result from the actual stress test. Sensitive Parameters ICES,VGE(th) IGBT / CoPack Quarterly Reliability Report Page 25 of 35 TEMPERATURE & HUMIDITY (THB) Test circuit Conditions Bias: Vce = 100% of maximum rated V(BR)CES up to 500V: 500V for all devices with rated V(BR)CES greater than 500V * Temperature: 85°C Relative Humidity: 85% Duration: 2000 Hours nominal Test points: 168, 500, 1000, 1500, 2000 Hours nominal. * Devices manufactured since week code 9640 the applied bias: V(BR)CES = Vmax or 100v which ever the lesser DUT D DC BIAS D = Diode for CoPack devices only Purpose Temperature and Humidity bias testing for non-hermetic packages is to subject the devices to extremes of temperature and humidity to examine the ability of the package to withstand the deleterious effect of the humid environment. Failure Modes There are two primary failure modes which have been observed. The first failure mode comes about as a result of the ingression of water molecules into the active area on the surface of the die. Once sufficient water has accumulated in the region of the electric field termination structure on the die, the perturbation of that field begins to degrade the breakdown characteristics of the device. The second failure mode that has been observed is due to cathodic corrosion of the aluminum emitter bonding pad. As with first failure mode, water will ingress to the top of the die. There, in the presence of applied bias, an electric current through the few monolayers of water will begin to cause the bond pad to dissolve. Eventually. the corrosion will proceed to the point where the current capability of the device is increased and become unstable. The dominance of either of these failure modes is basically determined by the amount of bias present during test. Under low bias conditions, the corrosion proceeds slowly, so the first failure mode will proceed very rapidly and the device will fail due to on-resistance before the breakdown characteristics can degrade. Sensitive Parameters V(BR)CES,VCE(on) TEMPERATURE CYCLING (T/C) Unbiased Conditions Temperature: Bias: Duration: Test points: Tmin = - 55°C Tmax = + 150°C Unbiased 2000 Cycles 250,500,1000,1500,2000 Nominal Purpose Temperature Cycling simulates the extremes of thermal stresses which devices will encounter in the actual circuit applications in combination with potentially extreme operating ambient temperatures. Some equipment is destined to be used in extreme environments, and subject to daily temperature cycles. Failure Modes The primary failure mode for temperature cycling is a thermal fatigue of the silicon / metal interfaces and metal / metal interfaces. The fatigue results from thermomechanical stresses due to heating and cooling and will cause electrical or thermal performance to degrade. If the degradation occurs at the header / die interface, then the thermal impedance, R θ JC will begin to increase well before any electrical effect is seen. If the degradation occurs at the wire bond / die interface or the wire bond / bond post interface, then on resistance, VCE(on), will slowly increase or become unstable with time. The thermal impedance, when measured during this time, may appear to decrease or change erratically. The mechanical stresses from the temperature can also propagate fractures in the silicon when the die is thermally mismatched to the solder / heat sink system. These fractures will manifest themselves in the form of shorted gates or degraded breakdown characteristics (V(BR)CES) Sensitive Parameters ICES,V(BR)CES, RθJC,VCE(on) IGBT / CoPack Quarterly Reliability Report Page 27 of 35 POWER CYCLING (P/C) Unbiased Test circuit Conditions Bias Temperature Duration Test points Set to give ∆ T = 100°C Tj = ∆ 100°C 10000 Cycles 2500, 5000, 7500, 10000 Nominal D DC BIAS Input Bias D = Diode for CoPack devices only Purpose The purpose of Power Cycling is to simulate the thermal and current pulsing stresses which devices will encounter in actual circuit applications when either the equipment is turned on and off or power is applied to the device in short bursts interspersed with quiescent, low power periods. The simulation is achieved by the on/off application of power to each device while they are in the active linear region. Failure Modes The primary failure mode for power cycling is a thermal fatigue of the silicon/metal interfaces and metal/metal interfaces. The fatigue, due to the thermomechanical stresses from the heating and cooling, will cause electrical or thermal performance or degrade. If the degradation occurs at the header/die interface, then the thermal impedance Rθ JC, will begin to increase well before any electrical effect is seen. If the degradation occurs at the wire bond/die interface or the wire bond/post interface, then on resistance, VCE(on), will slowly increase or become unstable with time. The thermal impedance, when measured during this time may appear to decrease or change erratically. The mechanical stresses from the application of power can also propagate fractures in the silicon when the die is thermally mismatched to the solder/heat sink system. These fractures will manifest themselves in the form of shorted gates or degraded breakdown characteristics (V(BR)CES). Sensitive Parameters ICES, V(BR)CES,Rθ θ JC, VCE(on) IGBT / CoPack Quarterly Reliability Report Page 28 of 35 ACCELERATEDMOISTURE RESISTANCE (A/C)Unbiased Conditions Temperature: Pressure: Bias: Duration: Test points: 121°C 15Ibs psig None 96 Hours nominal 96 Hours Purpose Accelerated Moisture Resistance test is performed to evaluate the moisture resistance of non-hermetic packages. Severe conditions of pressure, humidity and temperature are applied that accelerate the penetration of moisture through the interface of the encapsulant and the conductors that pass through it. Failure Modes There are two failure modes which have been observed. The first mode, degradation of the breakdown characteristics of the devices, can occur. The second failure mode that has been observed is due to cathodic corrosion of aluminum emitter bonding pad. Water will ingress to the top of the die. It is possible for contaminants to work their way into the active area of the device while under pressure in the presence of water. For that reason, the devices and test board are cleaned prior to use. Then, throughout the course of the testing, the parts and the test boards are never brought into contact with human contaminant. Sensitive Parameters V(BR)CES, VCE(on) IGBT / CoPack Quarterly Reliability Report Page 29 of 35 Section 5 Device Package and Frequency Listings IGBT / CoPack Quarterly Reliability Report Page 30 of 35 T0247 Generation III Package Part Number Channel Voltage Speed Hex Size Frequency Family IRGPC30S IRGPC40S IRGPC50S IRGPH20S IRGPH30S IRGPH40S IRGPH50S N N N N N N N 600 600 600 1200 1200 1200 1200 Standard Standard Standard Standard Standard Standard Standard 3 4 5 2 3 4 5 Low Frequency Low Frequency Low Frequency Low Frequency Low Frequency Low Frequency Low Frequency IRGPC20F IRGPC20M IRGPC20MD2 IRGPC30F IRGPC30M IRGPC30FD2 IRGPC30MD2 IRGPC40F IRGPC40M IRGPC40FD2 IRGPC40MD2 IRGPC50F IRGPC50M IRGPC50FD2 IRGPC50MD2 IRGPF20F IRGPF30F IRGPF40F IRGPF50F IRGPH20M IRGPH30MD2 IRGPH40F IRGPH40M IRGPH40FD2 IRGPH40MD2 IRGPH50F IRGPH50M IRGPH50FD2 IRGPH50MD2 N N N N N N N N N N N N N N N N N N N N N N N N N N N N N 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 900 900 900 900 1200 1200 1200 1200 1200 1200 1200 1200 1200 1200 Fast Short Circuit Rated Fast Short Circuit Rated Fast Fast Short Circuit Rated Fast Fast Short Circuit Rated Fast Fast Short Circuit Rated Fast Fast Short Circuit Rated Fast Fast Short Circuit Rated Fast Fast Short Circuit Rated Fast Fast Fast Fast Fast Short Circuit Rated Fast Short Circuit Rated Fast Fast Short Circuit Rated Fast Fast Short Circuit Rated Fast Fast Short Circuit Rated Fast Fast Short Circuit Rated Fast 2 2 2 3 3 3 3 4 4 4 4 5 5 5 5 2 3 4 5 2 3 4 4 4 4 5 5 5 5 Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency IGBT / CoPack Quarterly Reliability Report Page 32 of 35 IRGP420U IRGP430U IRGP440U IRGP440UD2 IRGP450U IRGP450UD2 IRGPC20K IRGPC20U IRGPC20KD2 IRGPC30K IRGPC30U IRGPC30KD2 IRGPC30UD2 IRGPC40K IRGPC40U IRGPC40KD2 IRGPC40UD2 IRGPC50K IRGPC50U IRGPC50KD2 IRGPC50UD2 IRGPH50K IRGPH50KD2 N N N N N N N N N N N N N N N N N N N N N N N IGBT / CoPack Quarterly Reliability Report 500 500 500 500 500 500 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 1200 1200 Ultra-Fast Ultra-Fast Ultra-Fast Ultra-Fast Ultra-Fast Ultra-Fast Short Circuit Rated Ultra-Fast Ultra-Fast Short Circuit Rated Ultra-Fast Short Circuit Rated Ultra-Fast Ultra-Fast Short Circuit Rated Ultra-Fast Ultra-Fast Short Circuit Rated Ultra-Fast Ultra-Fast Short Circuit Rated Ultra-Fast Ultra-Fast Short Circuit Rated Ultra-Fast Ultra-Fast Short Circuit Rated Ultra-Fast Ultra-Fast Short Circuit Rated Ultra-Fast Short Circuit Rated Ultra-Fast 2 3 4 4 5 5 2 2 2 3 3 3 3 4 4 4 4 5 5 5 5 5 5 High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency Page 32 of 35 T0247 Generation IV Package Part Number Channel Voltage Speed Hex Size Frequency Family IRG4P254S IRG4PC30S IRG4PC40S IRG4PC50S N N N N 250 600 600 600 Standard Standard Standard Standard 5 3 4 5 Low Frequency Low Frequency Low Frequency Low Frequency IRG4PC30F IRG4PC30FD IRG4PC40F IRG4PC40FD IRG4PC50F IRG4PC50FD N N N N N N 600 600 600 600 600 600 Fast Fast Fast Fast Fast Fast 3 3 4 4 5 5 Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency IRG4PC30U IRG4PC30UD IRG4PC30K IRG4PC40U IRG4PC40UD IRG4PC40K IRG4PC40KD IRG4PC50U IRG4PC50UD IRG4PH50U IRG4PH50UD N N N N N N N N N N N 600 600 600 600 600 600 600 600 600 1200 1200 Ultra-Fast Ultra-Fast Short Circuit Rated Ultra-Fast Ultra-Fast Ultra-Fast Short Circuit Rated Ultra-Fast Short Circuit Rated Ultra-Fast Ultra-Fast Ultra-Fast Ultra-Fast Ultra-Fast 3 3 3 4 4 4 4 5 5 5 5 High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency IGBT / CoPack Quarterly Reliability Report Page 33 of 35 T0220 Generation III Package Part Number Channel Voltage Speed Hex Size Frequency Family IRGBC20S IRGBC30S IRGBC40S N N N 600 600 600 Standard Standard Standard 2 3 4 Low Frequency Low Frequency Low Frequency IRGBC20F IRGBC20M IRGBC20FD2 IRGBC20MD2 IRGBC30F IRGBC30M IRGBC30FD2 IRGBC30MD2 IRGBC40F IRGBC40M IRGBF20F IRGBF30F N N N N N N N N N N N N 600 600 600 600 600 600 600 600 600 600 900 900 Fast Short Circuit Rated Fast Fast Short Circuit Rated Fast Fast Short Circuit Rated Fast Fast Short Circuit Rated Fast Fast Short Circuit Rated Fast Fast Fast 2 2 2 2 3 3 3 3 4 4 2 3 Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency IRGB420U IRGB420UD2 IRGB430U IRGB430UD2 IRGB440U IRGBC20K IRGBC20U IRGBC20KD2 IRGBC20UD2 IRGBC30K IRGBC30U IRGBC30KD2 IRGBC30UD2 IRGBC40K IRGBC40U N N N N N N N N N N N N N N N 500 500 500 500 500 600 600 600 600 600 600 600 600 600 600 Ultra-Fast Ultra-Fast Ultra-Fast Ultra-Fast Ultra-Fast Short Circuit Rated Ultra-Fast Ultra-Fast Short Circuit Rated Ultra-Fast Ultra-Fast Short Circuit Rated Ultra-Fast Ultra-Fast Short Circuit Rated Ultra-Fast Ultra-Fast Short Circuit Rated Ultra-Fast Ultra-Fast 2 2 3 3 4 2 2 2 2 3 3 3 3 4 4 High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency IGBT / CoPack Quarterly Reliability Report Page 34 of 35 T0220 Generation IV Package Part Number Channel Voltage Speed Hex Size Frequency Family IRG4BC20S IRG4BC30S IRG4BC40S N N N 600 600 600 Standard Standard Standard 2 3 4 Low Frequency Low Frequency Low Frequency IRG4BC20F IRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F N N N N N 600 600 600 600 600 Fast Fast Fast Fast Fast 2 2 3 3 4 Mid Frequency Mid Frequency Mid Frequency Mid Frequency Mid Frequency IRG4BC20U IRG4BC20UD IRG4BC30U IRG4BC30UD IRG4BC30K IRG4BC40U IRG4BC40K N N N N N N N 600 600 600 600 600 600 600 Ultra-Fast Ultra-Fast Ultra-Fast Ultra-Fast Short Circuit Rated Ultra-Fast Ultra-Fast Short Circuit Rated Ultra-Fast 2 2 3 3 3 4 4 High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency High Frequency IGBT / CoPack Quarterly Reliability Report Page 35 of 35