APTGT50DA170D1 Boost chopper VCES = 1700V IC = 50A @ Tc = 80°C ® Trench IGBT Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction 3 1 Q2 6 7 3 2 1 2 4 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance • High level of integration • Kelvin emitter for easy drive • Low stray inductance - M5 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat 6 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operation Area TC = 25°C Max ratings 1700 70 50 100 ±20 310 Tj = 125°C 100A@1700V TC = 25°C TC = 80°C TC = 25°C Unit V A January, 2004 7 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGT50DA170D1 – Rev 0 5 APTGT50DA170D1 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 50A RG = 22Ω Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 50A RG = 22Ω Diode Forward Voltage Er Reverse Recovery Energy Qrr Reverse Recovery Charge Test Conditions IF = 50A VGE = 0V IF = 50A VR = 900V di/dt =990A/µs IF = 50A VR = 900V di/dt =990A/µs Torque Wt Min 2.0 2.4 5.8 Typ 4400 150 200 100 750 6 2.4 Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature For terminals Mounting torque To Heatsink Package Weight 6.4 600 V nA Max Unit pF ns 100 ns 850 115 Tj = 125°C 16 Tj = 25°C 19 Tj = 125°C 30 Min IGBT Diode Typ mJ Max 2.2 -40 -40 -40 2 3 Unit V mJ µC Max 0.40 0.70 3500 APT website – http://www.advancedpower.com V 230 Tj = 25°C Tj = 125°C Tj = 25°C M5 M6 Unit V mA 90 Typ 1.8 1.9 9 Symbol Characteristic TJ TSTG TC 5.2 Min Thermal and package characteristics VISOL Max 22 Symbol Characteristic VF Typ 1700 Turn Off Energy Reverse diode ratings and characteristics RthJC Min Unit °C/W January, 2004 VCE(on) Test Conditions VGE = 0V, IC = 2.5mA VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 50A Tj = 125°C VGE = VCE , IC = 2.5mA VGE = 20V, VCE = 0V V 150 125 125 3.5 5 180 °C N.m g 2-3 APTGT50DA170D1 – Rev 0 Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current APTGT50DA170D1 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 3-3 APTGT50DA170D1 – Rev 0 January, 2004 Package outline