NEC NNCD6.2LH Low capacitance type electrostatic discharge noise clipping diodes (quarto type: common anode) 5-pin super small mini mold Datasheet

DATA SHEET
ESD NOISE CLIPPING DIODES
NNCD5.6LH to NNCD6.8LH
LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(QUARTO TYPE: COMMON ANODE)
5-PIN SUPER SMALL MINI MOLD
PACKAGE DIMENSIONS
This product series is a low capacitance type diode developed
(in millimeters)
for ESD (Electrostatic Discharge) absorption. Based on the
2.1 ± 0.1
1.25
IEC1000-4-2 test on electromagnetic interference (EMI), the
diode assures an endurance of no less than 8 kV, and capacitance
2
5
+0.1
With four elements mounted in the 5-pin super mini mold
package, that product can cope with more high density assembling.
1
0.2 –0
2.0 ± 0.2
communication bus such as USB.
0.65
the most suitable for the ESD absorption in the high-speed data
0.65
is small with 10 pF between the terminal. This product series is
3
4
FEATURES
• Capacitance is small with 10 pF (at VR = 0 V, f = 1 MHz)
It is excellent in the frequency
+0.1
0 to 0.1
between the terminal.
0.15 –0.05
4-2), the product assures the minimum endurance of 8 kV.
0.7
0.9 ± 0.1
• Based on the electrostatic discharge immunity test (IEC1000-
characteristic.
• With 4 elements mounted (common anode) in the 5-pin super
(5-pin super mini mold)
mini mold package, that product can cope with more high
density assembling.
PIN CONNECTION
APPLICATIONS
• External interface circuit ESD absorption in the high-speed
5
4
data communication bus such as USB.
1
2
3
1:
2:
3:
4:
5:
K1
A
K2
K3
K4
Cathode 1
Anode (Common)
Cathode 2
Cathode3
Cathode4
MAXIMUM RATINGS (T A = 25°C)
Power Dissipation
P
200 mW
(Total)
Surge Reverse Power
PRSM
2W (t = 10 µs, 1 pulse)
Fig.5
Junction Temperature
Tj
150°C
Storage Temperature
Tstg
–55°C to +150°C
Document No. D12786EJ1V0DS00 (1st edition)
Date Published October 1998 N CP(K)
Printed in Japan
©
1998
NNCD5.6LH to NNCD6.8LH
ELECTRICAL CHARACTERISTICS (T A = 25 °C) (A-K1, A-K2, A-K3, A-K4)
Breakdown VoltageNote 1
Type No
VBR (V)
DynamicNote 2
Reverse
Impedance
Zz (Ω)
Leakage
IR (µA)
Capacitance
ESD VoltageNote 3
Ct (pF)
(kV)
MIN.
MAX.
IT (mA)
MAX.
IT (mA)
MAX.
VR (V)
TYP.
Test Condition
MIN.
Test Condition
NNCD5.6LH
5.3
6.3
5
80
5
5
2.5
10
8
NNCD6.2LH
5.7
6.7
5
50
5
2
3.0
8
VR = 0 V
f = 1 MHz
NNCD6.8LH
6.2
7.1
5
30
5
2
3.5
7
C = 150 pF
R = 330 Ω
Contact
discharge
8
8
Notes 1. Tested with pulse (40 ms)
2. Zz is measured at IT given a small A.C. signal.
3. ESD voltage is measured based on the IEC1000-4-2 test on electromagnetic interference (EMI).
2
NNCD5.6LH to NNCD6.8LH
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure 1. P - TA RATING
Figure 2. It - VBR CHARACTERISTICS
250
NNCD5.6LH NNCD6.2LH NNCD6.8LH
200
10 m
100
50
0
100
125
25
50
75
TA - Ambient Temperature - °C
0
150
IT - On state Current - A
150
1m
100
10
1
100 n
10 n
4
5
7
6
8
VBR - Breakdown Voltage - V
Figure 3. Ct - VR CHARACTERISTICS
10.0
Ct - Capacitance between the terminal - pF
P - Power Dissipation - mW
(A - K1, A - K2, A - K3, A - K4)
f = 1 MHz
8.0
NNCD5.6LH
6.0
NNCD6.2LH
NNCD6.8LH
4.0
0.1
1.0
10
VR - Reverse Voltage - V
3
NNCD5.6LH to NNCD6.8LH
Figure 4. TRANSIENT THERMAL IMPEDANCE
1000
Zth - Transient Thermal Impedance - (°C/W)
625°C/W
NNCD [ ] LH
100
10
1
0.1
1m
10 m
100 m
1
10
100
t - Time - s
Figure 5. SURGE REVERSE POWER RATING
1000
PRSM - Surge Reverse Power - W
PRSM
TA = 25°C
Nom - Repetive
10
NNCD [ ] LH
1
0.1
1µ
10 µ
100 µ
1m
tT - Pulse Width - s
4
tT
100
10 m
100 m
NNCD5.6LH to NNCD6.8LH
REFERENCE
Document
Document No.
NEC semiconductor device reliability/quality control system
C11745E
NEC semiconductor device reliability/quality control system
MEI - 1201
Quality grade on NEC semiconductor device
C11531E
Semiconductor device mounting technology manual
C10535E
5
NNCD5.6LH to NNCD6.8LH
[MEMO]
6
NNCD5.6LH to NNCD6.8LH
[MEMO]
7
NNCD5.6LH to NNCD6.8LH
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customer designated "quality assurance program" for a specific application. The recommended applications of
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before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
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Anti-radioactive design is not implemented in this product.
M4 96.5
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