IRFN054SMD MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 2 60V 45A 0.027W FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT • HIGH PACKING DENSITIES SMD1 Pad 1 – Source Pad 2 – Drain Pad 3 – Gate Note: IRFxxxSM also available with pins 1 and 3 reversed. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ±20V ID Continuous Drain Current (VGS = 0 , Tcase = 25°C) 45A ID Continuous Drain Current (VGS = 0 , Tcase = 100°C) 28A IDM Pulsed Drain Current 1 180A PD Power Dissipation @ Tcase = 25°C 100W Linear Derating Factor 0.8W/°C 2 EAS Single Pulse Avalanche Energy dv/dt Peak Diode Recovery 3 TJ , Tstg Operating and Storage Temperature Range TL Package Mounting Surface Temperature (for 5 sec) RqJC RqJ–PCB Thermal Resistance Junction to Case Thermal Resistance Junction to PCB (Typical) 480mJ 4.5V/ns –55 to 150°C 300°C 1.25°C/W 3°C/W Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) @ VDD = 25V , L ³ 0.3mH , RG = 25W , Peak IL = 45A , Starting TJ = 25°C 3) @ ISD £ 45A , di/dt £ 200A/ms , VDD £ BVDSS , TJ £ 125°C , SUGGESTED RG = 2.35W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 7/00 IRFN054SMD ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) ID = 1mA VGS(th) Gate Threshold Voltage 1 Max. V / °C VGS = 10V ID = 28A 0.027 VGS = 10V ID = 45A 0.031 VDS = VGS ID = 250mA 2 VDS ³ 15V IDS = 28A 20 VGS = 0 V (W) S(W VDS = 0.8BVDSS 25 TJ = 125°C 250 mA Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V –100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 4600 Coss Output Capacitance VDS = 25V 2000 Crss Reverse Transfer Capacitance f = 1MHz 340 Qg Total Gate Charge 1 Qgs Gate – Source Charge 1 ID = 45A 180 ID = 45A 20 45 VDS = 0.5BVDSS 34 105 Qgd Gate – Drain (“Miller”) Charge td(on) Turn–On Delay Time tr Rise Time td(off) Turn–Off Delay Time tf Fall Time IS SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current nC nC 33 VDD = 30V 180 ID = 45A 100 RG = 2.35W ns 100 45 2 ISM Pulse Source Current VSD Diode Forward Voltage trr Reverse Recovery Time IF = 45A Qrr Reverse Recovery Charge di / dt £ 100A/ms VDD £ 50V ton Forward Turn–On Time LD PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) 0.8 LS Internal Source Inductance (from centre of source pad to end of source bond wire) 2.8 180 IS = 45A nA pF 80 VDS = 0.5BVDSS 1 W 4 gfs VGS = 10V Unit V 0.68 ID = 1mA 1 Typ. 60 Reference to 25°C Static Drain – Source On–State Resistance VGS = 0 Min. TJ = 25°C VGS = 0 TJ = 25°C A 2.5 V 280 ns 2.2 mC Negligible nH Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 7/00