TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/225 Devices Qualified Level 2N1711 JAN JANTX 2N1890 MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range Symbol 2N1711 2N1890 Unit VCBO VEBO IC 75 100 Vdc Vdc mAdc W W 0 C PT TJ, Tstg 7.0 500 0.8 3.0 -65 to +200 THERMAL CHARACTERISTICS Characteristics Thermal Impedance 1) Derate linearly 4.57 mW/0C for TA > 250C 2) Derate linearly 17.2 mW/0C for TC > 250C Symbol ZθJX Max. 58 Unit C/W 0 TO-5* *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit 2N1711, S 2N1890, S V(BR)CBO 75 100 Vdc 2N1711, S 2N1890, S V(BR)CER 50 80 Vdc 2N1711, S 2N1890, S V(BR)CEO 30 60 Vdc V(BR)EBO 7.0 Vdc OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 100 µAdc Collector-Emitter Breakdown Voltage RBE = 10 Ω, IC = 100 mAdc Collector-Emitter Breakdown Voltage IC = 30 mAdc Emitter-Base Breakdown Voltage IE = 100 µAdc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 80 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 2N1711 2N1890 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 ICBO IEBO 10 10 5.0 ηAdc ηAdc 120101 Page 1 of 2 2N1711, 2N1890 JAN SERIES Characteristics Symbol Min. Max. hFE 20 100 50 300 Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 10 µAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 500 mAdc, VCE = 10 Vdc Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 50 mAdc, IB = 5.0 mAdc Base-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 50 mAdc, IB = 5.0 mVdc 2N1711, S 2N1711, S 2N1890, S 2N1890, S VCE(sat) 1.5 5.0 1.2 Vdc VBE(sat) 1.3 0.9 Vdc 2N1890, S DYNAMIC CHARACTERISTICS Small-Signal Short-Circuit Forward-Current Transfer Ratio IC = 1.0 mAdc, VCE = 5.0 Vdc IC = 5.0 mAdc, VCE = 10 Vdc Magnitude of Common Emitter Small-Signal Short-Circuit Forward-Current Transfer Ratio IC = 50 mAdc, VCE = 10 Vdc; f = 20 MHz Small-Signal Short-Circuit Input Impedance IC = 5.0 mAdc, VCB = 10 Vdc Small-Signal Short-Circuit Output Admittance IC = 5.0 mAdc, VCB = 10 Vdc 2N1711, S 2N1890, S Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz 2N1711, S 2N1890, S hfe hfe hib 80 90 200 270 3.5 12 4.0 8.0 hob 1.0 .03 Cobo 8.0 5.0 25 15 Ω µΩ pF SWITCHING CHARACTERISTICS Turn-On Time + Turn-Off Time (See figure 1 of MIL-PRF-19500/225) (3) Pulse Test: Pulse Width 250 to 350µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 t on + toff 30 ηs 120101 Page 2 of 2