ANADIGICS AGB3306S24Q1 50w high linearity low noise wideband gain block Datasheet

AGB3306
50Ω High Linearity Low Noise
Wideband Gain Block
PRELIMINARY DATA SHEET - Rev 1.2
FEATURES
•
DC-7000 MHz Operation Bandwidth
•
+27.5 dBm Output IP3 at 850 MHz
•
4.5 dB Noise Figure at 850 MHz
•
20.5 dB Gain at 850 MHz
•
+14.5 dBm P1dB at 1950 MHz
•
SOT-89 Package
•
Single +5 V to +12 V Supply
•
Case Temperature: -40 to +85 °C
APPLICATIONS
•
Cellular Base Stations for W-CDMA, CDMA,
TDMA, GSM, PCS and CDPD systems
•
Fixed Wireless
•
MMDS/WLL
•
WLAN, HyperLAN
S24 Package
SOT-89
PRODUCT DESCRIPTION
The AGB3306 is one of a series of high performance
InGaP HBT amplifiers designed for use in
applications requiring high linearity, low noise and
low distortion. No external matching components
are needed for insertion into a 50Ω system. With a
high output IP3, low noise figure and wide band
operation, the AGB3306 is ideal for wireless
infrastructure applications such as Cellular Base
Stations, MMDS, and WLL. Offered in a low cost
SOT-89 surface mount package, the AGB3306
requires a single supply voltage, and typically
consumes 0.25 Watts of power using a +8 V supply.
RF Input
RF Output
/ Bias
Figure 1: Block Diagram
07/2003
AGB3306
GND
4
1
2
3
RF IN
GND
RF OUT
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
2
PIN
NAME
1
RFIN
RF Input
2
GND
Ground
3
RFOUT
RF Output / Bias
4
GND
Ground
DESCRIPTION
PRELIMINARY DATA SHEET - Rev 1.2
07/2003
AGB3306
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN
MAX
UNIT
Device Voltage (VCC)
0
+6
VD C
RF Input Power (PIN)
-
+10
dB m
-40
+150
°C
-
+200
°C
Storage Temperature (TSTG)
Junction Temperature
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
Table 3: Operating Ranges
PARAMETER
MIN
TYP
MAX
UNIT
Operating Frequency (f) (1)
-
-
7000
MHz
Supply Voltage (VSUPPLY) (2)
-
+8
-
VD C
-40
-
+85
°C
Case Temperature (TC)
The device may be operated safely over these conditions; however, parametric
performance is guaranteed only over the conditions defined in the electrical
specifications.
Notes:
(1) Operating frequency is defined by the output return loss (S22) having a VSWR less
than 2:1.
(2) Voltage applied through a bias resistor and inductor. Refer to Figure 3. For other
supply voltages, see the APPLICATION INFORMATION section.
PRELIMINARY DATA SHEET - Rev 1.2
07/2003
3
AGB3306
Table 4: Electrical Specifications
Ω System)
(TA = +25 °C, VSUPPLY = +8 VDC, 50Ω
PARAMETER
MIN
TYP
MAX
UNIT
Gain (S21)
850
1950
2140
2450
MHz
MHz
MHz
MHz
-
20.6
18.7
18.2
17.7
-
dB
850
1950
2140
2450
MHz
MHz
MHz
MHz
-
+27.5
+27.4
+27.8
+27.0
-
dB m
Output 1dB Compression (P1dB)
1950 MHz
-
+14.6
-
dB m
-
4.5
-
dB
Thermal Resistance ( θJC) (2)
-
420
-
°C/W
Supply Current (ICC)
-
33
-
mA
Output IP3
(1)
Noise Figure
850 MHz
Notes:
(1) OIP3 is measured with two tones at 1 MHz spacing at 0 dBm output power
per tone.
(2) The value for Thermal Resistance is based on a Device Voltage (VCC) of
+3.8 Volts.
3. Performance as measured on ANADIGICS test fixture (see Figure 3).
VSUPPLY
120 W
Rs
Bypass
RF Choke
DC Block
RF
Input
100 nH
0.01 mF
DC Block
RF
Output
AGB3306
0.01 mF
VCC
0.01 mF
Ω Terminations)
Figure 3: Application Circuit (50Ω
4
PRELIMINARY DATA SHEET - Rev 1.2
07/2003
100 pF
10 pF
AGB3306
PERFORMANCE DATA
25
0
20
-10
Mag S12: Isolation (dB)
Mag S21: Gain (dB)
Figure 4: Gain vs. Frequency
De-embedded 50W S-parameter
(TA = +25 °C, VCC = +3.8 V, ICC = 33 mA)
15
10
-20
-30
-40
5
-50
0
0
0
1
2
3
4
5
6
0
7
1
2
3
4
5
6
7
Frequency (GHz)
Frequency (GHz)
Figure 6: Input Return Loss vs. Frequency
De-embedded 50W S-parameter
o
(TA = +25 C, VCC = +3.8 V, ICC = 33 mA)
Figure 7: Output Return Loss vs. Frequency
De-embedded 50W S-parameter
o
(TA = +25 C, VCC = +3.8 V, ICC = 33 mA)
0
Mag S22: Output Return Loss (dB)
Mag S11: Input Return Loss (dB)
Figure 5: Isolation vs. Frequency
De-embedded 50W S-parameter
o
(TA = +25 C, VCC = +3.8 V, ICC = 33 mA)
-10
-20
-30
-40
-50
-10
-20
-30
-40
-50
0
1
2
3
4
5
6
7
0
1
Frequency (GHz)
2
3
4
5
6
7
Frequency (GHz)
PRELIMINARY DATA SHEET - Rev 1.2
07/2003
5
AGB3306
APPLICATION INFORMATION
The AGB3306 is optimized for a bias current of
33 mA. Using a +8 V supply, a bias resistor (RS) of
120 Ω will provide the appropriate bias (see Figure
3). Table 5 shows the recommended value of RS for
other supply voltages.
6
Table 5: Bias Resistor Values for
Various Supply Voltages
VSUPPLY
+5 V
+8 V
+9 V
+12 V
RS
30 Ω
120 Ω
150 Ω
240 Ω
PRELIMINARY DATA SHEET - Rev 1.2
07/2003
AGB3306
PACKAGE OUTLINE
Figure 8: S24 Package Outline – SOT-89
3306
LLLLNN
LLLL= FOUR NUMERIC CHARACTERS
Figure 9: Branding Specification
PRELIMINARY DATA SHEET - Rev 1.2
07/2003
7
AGB3306
ORDERING INFORMATION
PART NUMBER
TEMPERATURE
RANGE
PACKAGE
DESCRIPTION
COMPONENT PACKAGING
AGB3306S24Q1
-40 to +85°C
SOT-89 Package
1,000 piece Tape and Reel
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: [email protected]
IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without
notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are
subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are
assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges
customers to verify that the information they are using is current before placing orders.
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS
product in any such application without written consent is prohibited.
8
PRELIMINARY DATA SHEET - Rev 1.2
07/2003
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