HOTTECH BC818-40 Plastic-encapsulate transistor Datasheet

Plastic-Encapsulate Transistors
FEATURES
For general AF applications
BC818-16
BC818-25
BC818-40
High collector current
High current gain
Low collector-emitter saturation voltage
(NPN)
(NPN)
(NPN)
Marking
BC818-16
BC818-25
6E
BC818-40
6F
MAXIMUM RATINGS (TA=25
6G
unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
30
V
DCollector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
5
V
Collector Current -Continuous
IC
500
mA
Collector Power Dissipation
PC
300
mW
Junction Temperature
TJ
150
Storage Temperature
Tstg
-55 to +150
1. BASE
SOT-23
2. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter
3. COLLECTO
unless otherwise specified)
Symbol
Test
conditions
Min
Max
Unit
Collector-base breakdown voltage
VCB
IC= 10μA, IE=0
30
V
Collector-emitter breakdown voltage
VO
CE
IC= 10mA, IB=0
25
V
Emitter-base breakdown voltage
VO
EB
IE= 10μA, IC=0
5
V
Collector cut-off current
O
ICB
VCB= 25 V ,
Emitter cut-off current
O
IEB
VEB= 4V, IC=0
IE=0
0.1
μA
0.1
μA
O
hFE(1
VCE= 1V, IC= 100mA
100
)
hFE(2
VCE= 1V, IC= 300mA
60
Collector-emitter saturation voltage
VCE)(sat)
IC= 500mA, IB= 50mA
0.7
V
Base-emitter saturation voltage
VBE(sat)
IC= 500mA, IB= 50mA
1.2
V
1.2
V
DC current gain
Base-emitter voltage
VB
VCE=1V, IC= 500mA
Collecter capactiance
CEob
VCB=10V ,f=1MHz
Transition frequency
f
VCE= 5 V, IC= 50Ma
630
6
pF
170
MHz
f=100MHz
T
CLASSIFICATION OF
Rank
Range
hFE
6E
100-250
GUANGDONG HOTTECH
6F
160-400
INDUSTRIAL CO,. LTD.
6G
250-630
Page:P2-P1
Plastic-Encapsulate Transistors
BC818-16
BC818-25 Typical
BC818-40
Characteristics
GUANGDONG HOTTECH
INDUSTRIAL CO,. LTD.
Page:P2-P2
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