Plastic-Encapsulate Transistors FEATURES For general AF applications BC818-16 BC818-25 BC818-40 High collector current High current gain Low collector-emitter saturation voltage (NPN) (NPN) (NPN) Marking BC818-16 BC818-25 6E BC818-40 6F MAXIMUM RATINGS (TA=25 6G unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 30 V DCollector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 500 mA Collector Power Dissipation PC 300 mW Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 1. BASE SOT-23 2. EMITTER ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter 3. COLLECTO unless otherwise specified) Symbol Test conditions Min Max Unit Collector-base breakdown voltage VCB IC= 10μA, IE=0 30 V Collector-emitter breakdown voltage VO CE IC= 10mA, IB=0 25 V Emitter-base breakdown voltage VO EB IE= 10μA, IC=0 5 V Collector cut-off current O ICB VCB= 25 V , Emitter cut-off current O IEB VEB= 4V, IC=0 IE=0 0.1 μA 0.1 μA O hFE(1 VCE= 1V, IC= 100mA 100 ) hFE(2 VCE= 1V, IC= 300mA 60 Collector-emitter saturation voltage VCE)(sat) IC= 500mA, IB= 50mA 0.7 V Base-emitter saturation voltage VBE(sat) IC= 500mA, IB= 50mA 1.2 V 1.2 V DC current gain Base-emitter voltage VB VCE=1V, IC= 500mA Collecter capactiance CEob VCB=10V ,f=1MHz Transition frequency f VCE= 5 V, IC= 50Ma 630 6 pF 170 MHz f=100MHz T CLASSIFICATION OF Rank Range hFE 6E 100-250 GUANGDONG HOTTECH 6F 160-400 INDUSTRIAL CO,. LTD. 6G 250-630 Page:P2-P1 Plastic-Encapsulate Transistors BC818-16 BC818-25 Typical BC818-40 Characteristics GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P2-P2