ISC BDX78F Isc silicon pnp power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
BDX78F
DESCRIPTION
·Collector-Emitter Breakdown Voltage: V(BR)CEO = -80V(Min)
·Complement to Type BDX77F
APPLICATIONS
·Designed for use in hi-fi equipment delivering an output
of 15 to 15 W into a 4Ωor 8Ωload.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak s
-12
A
IB
Base Current
-3
A
PC
Collector Power Dissipation
@ TC=25℃
32
W
TJ
Junction Temperature
150
℃
-65~150
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance, Junction to Case
isc Website:www.iscsemi.cn
MAX
UNIT
6.3
℃/W
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
BDX78F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -0.2A ;IB= 0
-80
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= -1mA ;IE= 0
-100
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= -1mA ;IC= 0
-5
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -3A; IB= -0.3A
-1.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -6A; IB= -0.6A
-1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -6A; IB= -0.6A
-2.0
V
VBE(on)
Base-Emitter On Voltage
IC= -3A ; VCE= -2V
-1.5
V
ICEO
Collector Cutoff Current
VCE= 40V; IB= 0
-0.2
mA
ICBO
Collector Cutoff Current
VCB= VCBO;IE= 0
1
VCB= /2VCBO;IE= 0; TJ= 150℃
-0.1
-1.0
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
-0.5
mA
hFE
DC Current Gain
IC= -2A ; VCE= -2V
30
Current-Gain—Bandwidth Product
IC= -0.3A ; VCE= -3V, ftest= 1.0MHz
7.0
fT
CONDITIONS
B
MIN
B
B
B
B
MAX
UNIT
MHz
Switching Times
ton
Turn-On Time
1
μs
2
μs
IC= -2A; IB1= -IB2= -0.2A
toff
Turn-Off Time
isc Website:www.iscsemi.cn
2
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