DISCRETE SEMICONDUCTORS DATA SHEET M3D750 BLF2022-30 UHF power LDMOS transistor Product specification Supersedes data of 2002 Dec 19 2003 Feb 24 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-30 FEATURES PINNING - SOT608A • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 240 mA: PIN – Output power = 3.5 W (AV) – Gain = 12.9 dB DESCRIPTION 1 drain 2 gate 3 source, connected to flange – Efficiency = 16.5% – ACPR = −45 dBc at 3.84 MHz – dim = −42 dBc • Easy power control • Excellent ruggedness • High power gain 1 • Excellent thermal stability • Designed for broadband operation (2000 to 2200 MHz) • Internally matched for ease of use. 3 2 Top view APPLICATIONS MBL290 • RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range. Fig.1 Simplified outline (SOT608A). DESCRIPTION 30 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. QUICK REFERENCE DATA Typical RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION 2-tone, class-AB two-carrier W-CDMA test model 1, 64 channels f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) dim (dBc) ACLR5 (dBc) f1 = 2170; f2 = 2170.1 28 240 30 (PEP) 12.6 34.3 −29.5 − f1 = 2155; f2 = 2165 28 270 3.5 (AV) 12.9 16.5 −42 −45 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2003 Feb 24 2 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-30 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER MIN. MAX. UNIT VDS drain-source voltage − 65 V VGS gate-source voltage − ±15 V ID DC drain current − 4.5 A Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL Rth j-h PARAMETER CONDITIONS thermal resistance from junction to heatsink Th = 25 °C; note 1 VALUE UNIT 1.85 K/W Notes 1. Thermal resistance is determined under specified RF operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 0.7 mA 65 − − V VGSth gate-source threshold voltage VDS = 10 V; ID = 70 mA 4.5 − 5.5 V IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 5 µA IDSX on-state drain current VGS = VGSth + 9 V; VDS = 10 V 9 − − A IGSS gate leakage current VGS = ±15 V; VDS = 0 − − 11 nA gfs forward transconductance VDS = 10 V; ID = 2.5 A − 2 − S RDSon drain-source on-state resistance VGS = VGSth + 9 V; ID = 2.5 A − 0.3 − Ω Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 1.7 − pF APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 °C; Rth j-c = 1.85 K/W; unless otherwise specified. MODE OF OPERATION 2-tone, class-AB f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) dim (dBc) f1 = 2170; f2 = 2170.1 28 240 30 (PEP) >11 >30 ≤−25 Ruggedness in class-AB operation The BLF2022-30 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDQ = 240 mA; PL = 30 W; f = 2170 MHz. 2003 Feb 24 3 Philips Semiconductors Product specification UHF power LDMOS transistor MLD935 15 handbook, halfpage BLF2022-30 Gp Gp MLD936 60 0 handbook, halfpage dim (dBc) ηD (dB) (%) −20 d3 40 10 ηD d5 −40 d7 20 5 −60 −80 0 0 0 10 20 30 40 50 PL (PEP) (W) VDS = 28 V; IDQ = 240 mA; Th ≤ 25 °C; f1 = 2170 MHz; f2 = 2170.1 MHz. Fig.2 MLD937 15 handbook, halfpage (1) (2) (dB) 10 20 30 40 50 PL (PEP) (W) VDS = 28 V; IDQ = 240 mA; Th ≤ 25 °C; f1 = 2170 MHz; f2 = 2170.1 MHz. Power gain and drain efficiency as functions of peak envelope load power; typical values. Gp Gp 0 Fig.3 MLD938 60 0 handbook, halfpage dim (dBc) ηD (%) (3) Intermodulation distortion as a function of peak envelope load power; typical values. −20 10 ηD 40 (4) (1) (5) (6) (2) −40 (3) 20 5 −60 −80 0 0 0 10 20 30 40 50 PL (PEP) (W) VDS = 28 V; Th ≤ 25 °C; f1 = 2170 MHz; f2 = 2170.1 MHz. (1) IDQ = 290 mA. (2) IDQ = 240 mA. Fig.4 (3) IDQ = 190 mA. (4) IDQ = 190 mA. 10 20 30 40 50 PL (PEP) (W) VDS = 28 V; Th ≤ 25 °C; f1 = 2170 MHz; f2 = 2170.1 MHz. (5) IDQ = 240 mA. (6) IDQ = 290 mA. (1) IDQ = 190 mA. Power gain and drain efficiency as functions of peak envelope load power; typical values. 2003 Feb 24 0 Fig.5 4 (2) IDQ = 240 mA. (3) IDQ = 290 mA. Third order intermodulation distortion as a function of peak envelope load power; typical values. Philips Semiconductors Product specification UHF power LDMOS transistor MLD940 15 handbook, halfpage Gp Gp BLF2022-30 30 ηD (%) (dB) 10 MLD941 0 handbook, halfpage dim (dBc) 20 −20 10 −40 0 ACLR (dBc) −20 ηD 5 dim −40 ACLR 0 0 2 4 6 −60 0 8 10 PL (AV) (W) 0 Fig.7 Power gain and drain efficiency as functions of average load power; typical values. 2003 Feb 24 4 6 −60 10 PL (AV) (W) 8 Two-carrier W-CDMA performance. VDS = 28 V; IDQ = 270 mA; Th ≤ 25 °C; f1 = 2155 MHz; f1 = 2165 MHz;. Input signal: 3GPP W-CDMA 64 channels with 66% clipping; peak to average power ratio: 8.5 dB at 0.01% probability on CCDF; channel spacing/bandwidth = 5 MHz / 3.84 MHz. Two-carrier W-CDMA performance. VDS = 28 V; IDQ = 270 mA; Th ≤ 25 °C; f1 = 2170 MHz. Input signal: 3GPP W-CDMA 64 channels with 66% clipping; peak to average power ratio: 8.5 dB at 0.01% probability on CCDF; channel spacing/bandwidth = 5 MHz / 3.84 MHz. Fig.6 2 5 Intermodulation distortion and adjacent channel leakage ratio (ACLR) as functions of average load power; typical values. Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-30 MLD942 12 MLD943 8 handbook, halfpage handbook, halfpage zi ZL (Ω) (Ω) ri RL 4 8 0 4 xi −4 XL −8 0 2 2.05 2.1 2.15 2.2 2.1 2.05 2 2.2 2.15 f (GHz) f (GHz) VDS = 28 V; ID = 240 mA; PL = 30 W; Th ≤ 25 °C. VDS = 28 V; ID = 240 mA; PL = 30 W; Th ≤ 25 °C. Fig.8 Fig.9 Input impedance as a function of frequency (series components); typical values. Load impedance as a function of frequency (series components); typical values. L1 handbook, full pagewidth VDD C8 C7 L11 C6 C13 C17 C14 C19 C20 Vgate R1 input 50 Ω C3 L6 L2 C11 L3 C4 C1 L4 L5 L7 L8 C5 L9 C9 L10 output 50 Ω C10 C12 C2 L12 Fig.10 Class-AB test circuit. 2003 Feb 24 6 C16 C18 C15 MLD944 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-30 List of components (See Figs 10 and 11) COMPONENT C1, C2, C9, C10 DESCRIPTION Tekelec variable capacitor VALUE DIMENSIONS CATALOGUE NO. 0.6 to 4.5 pF C3, C4, C11, C12 multilayer ceramic chip capacitor; 6.8 pF note 1 C5 multilayer ceramic chip capacitor; 2.2 pF note 1 C6, C7, C13, C14, C15, C16 multilayer ceramic chip capacitor; 12 pF note 1 C8 tantalum capacitor 10 µF C17, C18 multilayer ceramic chip capacitor 4.7 µF C19 multilayer ceramic chip capacitor; 1 nF note 2 C20 electrolytic capacitor L1 handmade L2 stripline; note 3 50 Ω 12 × 2.4 mm L3 stripline; note 3 43 Ω 18 × 3 mm L4 stripline; note 3 29 Ω 4 × 5 mm L5 stripline; note 3 10 Ω 5 × 18.4 mm L6 stripline; note 3 56 Ω 34.4 × 2 mm L7 stripline; note 3 9Ω 10 × 20 mm L8 stripline; note 3 29 Ω 4 × 5 mm L9 stripline; note 3 41 Ω 20 × 3.2 mm L10 stripline; note 3 50 Ω 5 × 2.4 mm L11, L12 stripline; note 3 17 Ω 24.5 × 10 mm TDK C4532X7R1H475M 100 µF; 63 V 2 loops, dia. 4 mm Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. 3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (εr = 2.2); thickness 0.79 mm. 2003 Feb 24 7 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-30 40 handbook, full pagewidth 40 60 BLF2022-30 testjig input BLF2022-30 testjig output C13 C17 C14 L1 C8 R1 C6 C7 C20 C19 C3 C4 C11 C12 C5 C1 C9 C2 C10 C15 C18 C16 BLF2022-30 testjig output BLF2022-30 testjig input MLD945 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr = 2.2), thickness 0.79 mm. The other side is unetched and serves as a ground plane. Fig.11 Component layout for 2.17 GHz class-AB test circuit. 2003 Feb 24 8 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-30 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 2 leads SOT608A D A F 3 D1 U1 B q c C 1 H E1 p U2 E w1 M A M B M 2 A w2 M C M b Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.62 3.76 7.24 6.99 0.15 0.10 10.21 10.29 10.01 10.03 inches 0.182 0.148 0.285 0.006 0.275 0.004 0.402 0.405 0.394 0.395 OUTLINE VERSION D D1 F H p Q q U1 U2 w1 w2 10.21 10.29 10.01 10.03 1.14 0.89 15.75 14.73 3.30 2.92 1.70 1.35 15.24 20.45 20.19 9.91 9.65 0.25 0.51 0.402 0.405 0.394 0.395 0.045 0.620 0.035 0.580 0.130 0.115 0.067 0.600 0.053 0.805 0.795 0.390 0.010 0.020 0.380 E E1 REFERENCES IEC JEDEC EIAJ ISSUE DATE 01-02-22 02-02-11 SOT608A 2003 Feb 24 EUROPEAN PROJECTION 9 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-30 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Feb 24 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-30 NOTES 2003 Feb 24 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/03/pp12 Date of release: 2003 Feb 24 Document order number: 9397 750 10921