IDT IDT7140SA100C High-speed 1k x 8 dual-port static ram Datasheet

IDT7130SA/LA
IDT7140SA/LA
HIGH-SPEED
1K x 8 DUAL-PORT
STATIC RAM
Integrated Device Technology, Inc.
FEATURES
DESCRIPTION
• High-speed access
—Military: 25/35/55/100ns (max.)
—Commercial: 25/35/55/100ns (max.)
—Commercial: 20ns 7130 in PLCC and TQFP
• Low-power operation
—IDT7130/IDT7140SA
—Active: 550mW (typ.)
—Standby: 5mW (typ.)
—IDT7130/IDT7140LA
—Active: 550mW (typ.)
—Standby: 1mW (typ.)
• MASTER IDT7130 easily expands data bus width to
16-or-more-bits using SLAVE IDT7140
• On-chip port arbitration logic (IDT7130 Only)
• BUSY output flag on IDT7130; BUSY input on IDT7140
• Interrupt flags for port-to-port communication
• Fully asynchronous operation from either port
• Battery backup operation–2V data retention (LA only)
• TTL-compatible, single 5V ±10% power supply
• Military product compliant to MIL-STD-883, Class B
• Standard Military Drawing #5962-86875
• Industrial temperature range (–40°C to +85°C) is available, tested to military electrical specifications
The IDT7130/IDT7140 are high-speed 1K x 8 Dual-Port
Static RAMs. The IDT7130 is designed to be used as a
stand-alone 8-bit Dual-Port RAM or as a "MASTER" DualPort RAM together with the IDT7140 "SLAVE" Dual-Port in
16-bit-or-more word width systems. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 16-or-more-bit
memory system applications results in full-speed, error-free
operation without the need for additional discrete logic.
Both devices provide two independent ports with separate control, address, and I/O pins that permit independent
asynchronous access for reads or writes to any location in
memory. An automatic power down feature, controlled by
CE, permits the on chip circuitry of each port to enter a very
low standby power mode.
Fabricated using IDT's CMOS high-performance technology, these devices typically operate on only 550mW of
power. Low-power (LA) versions offer battery backup data
retention capability, with each Dual-Port typically consuming 200µW from a 2V battery.
The IDT7130/IDT7140 devices are packaged in 48-pin
sidebraze or plastic DIPs, LCCs, or flatpacks, 52-pin PLCC,
and 64-pin TQFP and STQFP. Military grade product is
manufactured in compliance with the latest revision of MILSTD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.
FUNCTIONAL BLOCK DIAGRAM
OER
OEL
CEL
R/WL
CER
R/WR
I/O0L- I/O7L
I/O
Control
I/O0R-I/O7R
I/O
Control
(1,2)
BUSYR
BUSYL
A9L
A0L
Address
Decoder
MEMORY
ARRAY
10
NOTES:
1. IDT7130 (MASTER): BUSY is open
drain output and requires pullup
resistor of 270Ω.
IDT7140 (SLAVE): BUSY is input.
2. Open drain output: requires pullup
resistor of 270Ω.
Address
Decoder
A9R
A0R
10
ARBITRATION
and
INTERRUPT
LOGIC
CEL
OEL
R/WL
CER
OER
R/WR
INTL
(2)
INTR
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
(2)
2689 drw 01
MILITARY AND COMMERCIAL TEMPERATURE RANGES
©1996 Integrated Device Technology, Inc.
(1,2)
For latest information contact IDT’s web site at www.idt.com or fax-on-demand at 408-492-8391.
6.01
OCTOBER 1996
DSC-2689/7
1
IDT7130SA/LA AND IDT7140SA/LA
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
BUSYR
7 6
INTR
A1L
OER
A2L
A0R
A1R
A2R
A3R
A4R
A5R
A6R
A7R
A8R
A9R
I/O7R
I/O6R
I/O5R
I/O4R
I/O3R
I/O2R
I/O1R
I/O0R
5 4
3 2
8
9
INTR
N/C
WR
BUSYR
CER
R/
VCC
CEL
WL
BUSYL
R/
INTL
INDEX
52 51 50 49 48 47
1
46
45
OER
44
43
A1R
A0R
A4L
10
11
A5L
A6L
12
13
IDT7130/40
J52-1
42
41
A3R
A4R
A7L
14
15
52-PIN PLCC
TOP VIEW (3)
40
39
A5R
16
17
38
37
A7R
18
19
20
36
35
34
A9R
A3L
A8L
A9L
I/O0L
I/O1L
I/O2L
I/O3L
A2R
A6R
A8R
N/C
I/O7R
21 22 23 24 25 26 27 28 29 30 31 32 33
2689 drw 04
I/O6R
A0L
A1L
A2L
A3L
A4L
A5L
A6L
A7L
A8L
A9L
I/O0L
I/O1L
I/O2L
I/O3L
I/O4L
I/O5L
I/O6L
I/O7L
GND
WR
R/
I/O4R
I/O5R
OEL
CER
GND
I/O0R
I/O1R
I/O2R
I/O3R
INTL
VCC
N/C
BUSYL
1
48
2
47
3
46
4
45
5
44
6
43
7
42
8 IDT7130/ 41
9 IDT7140 40
10 P48-1 39
&
11 C48-2
38
12
37
13 DIP
36
TOP
14 VIEW
35
(3)
15
34
16
33
17
32
18
31
19
30
20
29
21
28
22
27
23
26
24
25
A0L
WL
I/O4L
I/O5L
I/O6L
I/O7L
N/C
CEL
R/
OEL
PIN CONFIGURATIONS (1,2)
N/C
N/C
N/C
INTR
BUSYR
WR
CER
R/
VCC
VCC
CE L
WL
R/
INTL
BUSYL
N/C
N/C
N/C
A0L
A1L
A2L
A3L
A4L
A5L
A6L
N/C
A7L
A8L
A9L
N/C
I/O0L
I/O1L
I/O2L
A1R
A2R
A3R
A4R
A5R
A6R
A7R
A8R
A9R
I/O7R
I/O6R
2689 drw 03
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
IDT7130/40
PP64-1 & PN64-1
64-PIN STQFP
64-PIN TQFP
TOP VIEW (3)
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
OEL
A0R
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
INDEX
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
I/O3L
N/C
I/O4L
I/O5L
I/O6L
I/O7L
N/C
GND
GND
I/O0R
I/O1R
I/O2R
I/O3R
N/C
I/O4R
I/O5R
INTR
OER
WR
BUSYR
CER
R/
VCC
R/
CEL
WL
BUSYL
INTL
6 5 4 3 2
48 47 46 45 44 43
1
7
42
8
41
9
40
10
39
IDT7130/40
L48-1
11
38
&
12
37
F48-1
13
36
48-PIN LCC/ FLATPACK
14
35
TOP VIEW (3)
15
34
16
33
17
32
18
31
19 20 21 22 23 24 25 26 27 28 29 30
I/O3L
I/O4L
I/O5L
I/O6L
I/O7L
GND
I/O0R
I/O1R
I/O2R
I/O3R
I/O4R
I/O5R
A1L
A2L
A3L
A4L
A5L
A6L
A7L
A8L
A9L
I/O0L
I/O1L
I/O2L
A0L
INDEX
OEL
2689 drw 02
OER
A0R
A1R
A2R
A3R
A4R
A5R
A6R
N/C
A7R
A8R
A9R
N/C
N/C
I/O7R
I/O6R
2689 drw 05
NOTES:
1. All Vcc pins must be connected to the power supply.
2. All GND pins must be connected to the ground supply.
3. This text does not indicate orientation of the actual part-marking.
6.01
2
IDT7130SA/LA AND IDT7140SA/LA
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Rating
VTERM(2) Terminal Voltage
with Respect to
GND
Operating
TA
Temperature
Temperature
TBIAS
Under Bias
Storage
TSTG
Temperature
IOUT
Commercial
Military
Unit
–0.5 to +7.0
–0.5 to +7.0
V
0 to +70
–55 to +125
°C
–55 to +125
–65 to +135
–65 to +150
°C
50
50
mA
Symbol
VCC
GND
Parameter
Supply Voltage
Supply Voltage
VIH
Input High Voltage
VIL
°C
–55 to +125
DC Output
Current
RECOMMENDED
DC OPERATING CONDITIONS
Min.
4.5
0
Typ.
5.0
0
Max.
5.5
0
Unit
V
V
2.2
—
6.0(2)
V
—
0.8
V
(1)
Input Low Voltage
–0.5
NOTES:
1. VIL (min.) > -1.5V for pulse width less than 10ns.
2. VTERM must not exceed Vcc + 0.5V.
2689 tbl 02
2689 tbl 01
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of the specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. VTERM must not exceed Vcc + 0.5 for more than 25% of the cycle time
or 10ns maximum, and is limited to < 20mA for the period of VTERM > Vcc
+ 0.5V.
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade
Military
Commercial
Ambient
Temperature
–55°C to +125°C
0°C to +70°C
GND
0V
0V
VCC
5.0V ± 10%
5.0V ± 10%
2689 tbl 03
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE (VCC = 5.0V ± 10%)
7130SA
Symbol
Parameter
7130LA
7140SA
Min.
Max.
Test Conditions
7140LA
Max.
Max.
Unit
|lLl|
Input Leakage
Current(1)
VCC = 5.5V,
VIN = 0V to VCCIN = GND to VCC
—
10
—
5
µA
|lLO|
Output Leakage
Current(1)
VCC = 5.5V,
CE = VIH, VOUT = 0V to VCCC
—
10
—
5
µA
VOL
Output Low Voltage
(l/O0-l/O7)
lOL = 4mA
lOL= 16mA
—
0.4
—
0.4
V
VOL
Open Drain Output
Low Voltage (BUSY, INT)
lOL = 16mA
—
0.5
—
0.5
V
VOH
Output High Voltage
lOH = -4mA
2.4
—
2.4
—
V
NOTE:
1. At Vcc < 2.0V leakages are undefined.
2689 tbl 04
CAPACITANCE(1)
(TA = +25°C, f = 1.0MHz) TQFP ONLY(3)
Symbol
CIN
COUT
Parameter
Input Capacitance
Output Capacitance
Conditions(2)
VIN = 3dV
VIN = 3dV
Max. Unit
9
pF
10
pF
2689 tbl 05
NOTES:
1. This parameter is determined by device characterization but is not
production tested.
2. 3dv references the interpolated capacitance when the input and
output signals switch from 0V to 3V or from 3V to 0V.
3. 11pF max. for other packages.
6.01
3
IDT7130SA/LA AND IDT7140SA/LA
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(1,6) (VCC = 5.0V ± 10%)
Symbol
Parameter
ICC
Dynamic Operating
Current (Both Ports
Active)
CEL and CER = VIL, MIL. SA
Outputs open,
LA
COM'L. SA
f = fMAX(4)
LA
—
— 110 280
—
— 110 220
110 250 110 220
110 200 110 170
110 230
110 170
110 165
110 120
110
110
110
110
190
140
155
110
110
110
110
110
190
140
155
110
mA
ISB1
Standby Current
(Both Ports - TTL
Level Inputs)
CEL and CER = VIH, MIL. SA
f = fMAX(4)
LA
COM'L. SA
LA
—
—
30
30
—
—
65
45
30
30
30
30
80
60
65
45
25
25
25
25
80
60
65
45
20
20
20
20
65
45
65
35
20
20
20
20
65
45
55
35
mA
ISB2
Standby Current
(One Port - TTL
Level Inputs)
MIL.
—
—
65
65
—
—
165
125
65
65
65
65
160
125
150
115
50
50
50
50
150
115
125
90
40 125
40 90
40 110
40 75
40
40
40
40
125
90
110
75
mA
ISB3
Full Standby Current
(Both Ports - All
CMOS Level Inputs
MIL.
SA
LA
COM'L. SA
LA
—
—
1.0
0.2
—
—
15
5
1.0
0.2
1.0
0.2
30
10
15
5
1.0
0.2
1.0
0.2
30
10
15
4
1.0
0.2
1.0
0.2
30
10
15
4
1.0
0.2
1.0
0.2
30
10
15
4
mA
MIL.
—
—
60
60
—
—
155
115
60
60
60
60
155
115
145
105
45
45
45
45
145
105
110
85
40 110
40 85
40 100
40 70
40
40
40
40
110
80
95
70
mA
ISB4
Full Standby Current
(One Port - All
CMOS Level Inputs)
Test Conditions
Version
7130X20(2) 7130X25(3) 7130X35 7130X55 7130X100
7140X25(3) 7140X35 7140X55 7140X100
Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max. Unit
CE"A" = VIL and
CE"B" = VIH (7)
SA
LA
Active Port Outputs COM'L. SA
LA
Open, f = fMAX(4)
CEL and
CER > VCC -0.2V,
VIN > VCC -0.2V or
VIN < 0.2V,f = 0(5)
CE"A" < 0.2V and
CE"B" > VCC -0.2V(7)
VIN > VCC -0.2V or
VIN < 0.2V,
Active Port Outputs
Open, f = fMAX(4)
SA
LA
COM'L. SA
LA
NOTES:
2689 tbl 06
1. 'X' in part numbers indicates power rating (SA or LA).
2. Com'l Only, 0°C to +70°C temperature range. PLCC and TQFP packages.
3. Not available in DIP packages.
4. At f = fMax, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC, and using “AC TEST CONDITIONS”
of input levels of GND to 3V.
5. f = 0 means no address or control lines change. Applies only to inputs at CMOS level standby.
6. Vcc = 5V, TA=+25°C for Typ and is not production tested. Vcc DC = 100 mA (Typ.)
7. Port "A" may be either left or right port. Port "B" is opposite from port "A".
DATA RETENTION CHARACTERISTICS (LA Version Only)
Symbol
VDR
VCC for Data Retention
ICCDR
Data Retention Current
tCDR(3)
Chip Deselect to Data
Retention Time
tR(3)
lDT7130LA/IDT7140LA
Min.
Typ.(1)
Max.
Test Conditions
Parameter
VCC = 2.0V, CE > VCC -0.2V
VIN > VCC -0.2V or VIN < 0.2V
2.0
—
—
V
Mil.
—
100
4000
µA
Com’l.
—
100
1500
µA
0
—
—
ns
—
—
ns
tRC(2)
Operation Recovery
Unit
Time
2689 tbl 07
NOTES:
1. VCC = 2V, TA = +25°C, and is not production tested.
2. tRC = Read Cycle Time
3. This parameter is guaranteed but not production tested.
6.01
4
IDT7130SA/LA AND IDT7140SA/LA
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DATA RETENTION WAVEFORM
DATA RETENTION MODE
VCC
VDR ≥ 2.0V
4.5V
tCDR
4.5V
tR
VDR
CE
VIH
VIH
2692 drw 06
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
5ns
1.5V
1.5V
Figures 1, 2, and 3
2689 tbl 08
5V
5V
1250Ω
1250Ω
DATA OUT
DATA OUT
775Ω
30pF*
775Ω
5pF*
(*100pF for 55 and
100ns versions)
Figure 1. Output Test Load
Figure 2. Output Test Load
(for tHZ, tLZ, tWZ, and tOW)
* including scope and jig
5V
270Ω
BUSY or INT
30pF*
*100pF for 55 and 100ns versions
2689 drw 07
Figure 3. BUSY and INT
AC Output Test Load
6.01
5
IDT7130SA/LA AND IDT7140SA/LA
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(3)
Symbol
7130X20(2) 7130X25(5) 7130X35
7130X55
7130X100
7140X25(5) 7140X35
7140X55
7140X100
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
Parameter
Read Cycle
tRC
tAA
tACE
tAOE
tOH
tLZ
tHZ
tPU
tPD
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Output Hold From Address Change
Output Low-Z Time(1,4)
Output High-Z Time(1,4)
Chip Enable to Power Up Time(4)
Chip Disable to Power Down Time(4)
20
—
—
3
0
—
0
—
—
20
20
11
—
—
10
—
20
25
—
—
—
3
0
—
0
—
—
25
25
12
—
—
10
—
25
35
—
—
—
3
0
—
0
—
—
35
35
20
—
—
15
—
35
NOTES:
1. Transition is measured ±500mV from Low or High-impedance voltage Output Test Load (Figure 2).
2. Com'l Only, 0°C to +70°C temperature range. PLCC and TQFP package.
3. “X” in part numbers indicates power rating (SA or LA).
4. This parameter is guaranteed by device characterization, but is not production tested.
5. Not available in DIP packages.
55
—
—
—
3
5
—
0
—
—
55
55
25
—
—
25
—
50
100
—
—
—
10
5
—
0
—
—
100
100
40
—
—
40
—
50
ns
ns
ns
ns
ns
ns
ns
ns
ns
2689 tbl 09
TIMING WAVEFORM OF READ CYCLE NO. 1, EITHER SIDE(1)
tRC
ADDRESS
tAA
tOH
tOH
DATAOUT
PREVIOUS DATA VALID
DATA VALID
BUSYOUT
tBDD (2,3)
2689 drw 08
NOTES:
1. R/W = VIH, CE = VIL, and is OE = VIL. Address is valid prior to the coincidental with CE transition Low.
2. tBDD delay is required only in the case where the opposite port is completing a write operation to the same the
address location. For simultaneous read operations, BUSY has no relationship to valid output data.
3. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA, and tBDD.
6.01
6
IDT7130SA/LA AND IDT7140SA/LA
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TIMING WAVEFORM OF READ CYCLE NO. 2, EITHER SIDE(3)
tACE
tAOE
tLZ
(4)
tHZ
(1)
tHZ
(2)
VALID DATA
DATAOUT
tLZ
ICC
CURRENT
ISS
(2)
(1)
tPD
tPU
(4)
50%
50%
2689 drw 09
NOTES:
1. Timing depends on which signal is asserted last, OE or CE.
2. Timing depends on which signal is deaserted first, OE or CE.
3. R/W = VIH and the address is valid prior to or coincidental with CE transition Low.
4. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA, and tBDD.
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(5)
7130X20(2) 7130X25(6)
(6)
Symbol
Parameter
Write Cycle
Write Cycle Time(3)
tWC
tEW
Chip Enable to End-of-Write
Address Valid to End-of-Write
tAW
tAS
Address Set-up Time
Write Pulse Width(4)
tWP
tWR
Write Recovery Time
Data Valid to End-of-Write
tDW
tHZ
Output High-Z Time(1)
Data Hold Time
tDH
tWZ
Write Enabled to Output in High-Z(1)
Output Active From End-of-Write(1)
tOW
Min.
20
15
15
0
15
0
10
—
0
—
0
Max.
—
—
—
—
—
—
—
10
—
10
—
7140X25
Min. Max.
25
20
20
0
15
0
12
—
0
—
0
—
—
—
—
—
—
—
10
—
10
—
7130X35
7130X55
7140X35
7140X55
Min. Max. Min. Max.
35
30
30
0
25
0
15
—
0
—
0
—
—
—
—
—
—
—
15
—
15
—
55
40
40
0
30
0
20
—
0
—
0
—
—
—
—
—
—
—
25
—
25
—
7130X100
7140X100
Min. Max.
100
90
90
0
55
0
40
—
0
—
0
—
—
—
—
—
—
—
40
—
40
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES:
2689 tbl 10
1. Transition is measured ±500mV from Low or High-impedance voltage with Output Test Load (Figure 2). This parameter is guaranteed by
device characterization but is not production tested.
2. 0°C to +70°C temperature range only, PLCC and TQFP packages.
3. For MASTER/SLAVE combination, tWC = tBAA + tWP, since R/W = VIL must occur after tBAA.
4. If OE is low during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off
data to be placed on the bus for the required tDW. If OE is High during a R/W controlled write cycle, this requirement does not apply and the
write pulse can be as short as the specified tWP.
5. “X” in part numbers indicates power rating (SA or LA).
6. Not available in DIP packages.
6.01
7
IDT7130SA/LA AND IDT7140SA/LA
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TIMING WAVEFORM OF WRITE CYCLE NO. 1, (R/W CONTROLLED TIMING)(1,5,8)
tWC
ADDRESS
tHZ
(7)
OE
tAW
CE
tWP(2)
tAS(6)
tWR
(7)
(3)
tHZ
W
R/
tWZ (7)
DATA OUT
tOW
(4)
(4)
tDW
tDH
DATA IN
2689 drw 10
TIMING WAVEFORM OF WRITE CYCLE NO. 2, (CE CONTROLLED TIMING)(1,5)
tWC
ADDRESS
tAW
CE
tAS(6)
(3)
tEW (2)
tWR
W
R/
tDW
tDH
DATA IN
2689 drw 11
NOTES:
1. R/W or CE must be High during all address transitions.
2. A write occurs during the overlap (tEW or tWP) of CE = VIL and R/W = VIL.
3. tWR is measured from the earlier of CE or R/W going High to the end of the write cycle.
4. During this period, the l/O pins are in the output state and input signals must not be applied.
5. If the CE Low transition occurs simultaneously with or after the R/W Low transition, the outputs remain in the High-impedance state.
6. Timing depends on which enable signal (CE or R/W) is asserted last.
7. This parameter is determined be device characterization, but is not production tested. Transition is measured +/- 500mV from steady state
with the Output Test Load (Figure 2).
8. If OE is low during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off
and data to be placed on the bus for the required tDW. If OE is High during a R/W controlled write cycle, this requirement does not apply and
the write pulse can be as short as the specified tWP.
6.01
8
IDT7130SA/LA AND IDT7140SA/LA
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(7)8M824S258M824S30
Symbol
Parameter
7130X20(1)
7130X25(9)
Min. Max.
7140X25(9)
7140X35
Min. Max. Min. Max.
7130X35
7130X55
7132158M824S4
7130X100
7140X55 7140X100
Min. Max. Min. Max.
Unit
Busy Timing (For Master lDT7130 Only)
BUSY Access Time from Address
tBAA
—
20
—
20
—
20
—
30
—
50
ns
tBDA
tBAC
—
—
20
20
—
—
20
20
—
—
20
20
—
—
30
30
—
—
50
50
ns
ns
—
20
—
20
—
20
—
30
—
50
ns
BUSY Disable Time from Address
BUSY Access Time from Chip Enable
BUSY Disable Time from Chip Enable
Write Hold After BUSY(6)
tBDC
tWH
tWDD
Write Pulse to Data Delay(2)
12
—
—
40
15
—
—
50
20
—
—
60
20
—
—
80
20
—
—
120
ns
ns
tDDD
tAPS
Write Data Valid to Read Data Delay(2)
Arbitration Priority Set-up Time(3)
—
5
30
—
—
5
35
—
—
5
35
—
—
5
55
—
—
5
100
—
ns
ns
—
5
25
—
—
5
35
—
—
5
35
—
—
5
50
—
—
5
65
ns
tBDD
BUSY Disable to Valid Data(4)
Busy Timing (For Slave IDT7140 Only)e
Write to BUSY Input(5)
0
—
0
—
0
—
0
—
0
—
ns
tWH
tWDD
Write Hold After BUSY(6)
Write Pulse to Data Delay(2)
12
—
—
40
15
—
—
50
20
—
—
60
20
—
—
80
20
—
—
120
ns
ns
tDDD
Write Data Valid to Read Data Delay(2)
—
30
—
35
—
35
—
55
—
100
ns
tWB
NOTES:
2689 tbl 11
1. Com'l Only, 0°C to +70°C temperature range. PLCC and TQFP packages only.
2. Port-to-port delay through RAM cells from the writing port to the reading port, refer to “Timing Waveform of Write with Port-to-Port Read and BUSY."
3. To ensure that the earlier of the two ports wins.
4. tBDD is a calculated parameter and is the greater of 0, tWDD – tWP (actual), or tDDD – tDW (actual).
5. To ensure that a write cycle is inhibited on port 'B' during contention on port 'A'.
6. To ensure that a write cycle is completed on port 'B' after contention on port 'A'.
7. “X” in part numbers indicates power rating (SA or LA).
8. Not available in DIP packages.
TIMING WAVEFORM OF WRITE WITH PORT-TO-PORT READ AND BUSY (2,3,4)
tWC
ADDR’A’
MATCH
tWP
W’A’
R/
tDW
DATAIN’A’
tDH
VALID
tAPS
(1)
ADDR’B’
MATCH
tBDD
t BDA
BUSY’B’
tWDD
DATAOUT’B’
VALID
tDDD
NOTES:
1. To ensure that the earlier of the two ports wins. tBDD is ignored for slave (IDT7140).
2. CEL = CER = VIL.
3. OE = VIL for the reading port.
4. All timing is the same for the left and right ports. Port 'A' may be either the left or right port. Port "B" is opposite from port "A".
6.01
2689 drw 12
9
IDT7130SA/LA AND IDT7140SA/LA
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TIMING WAVEFORM OF WRITE WITH BUSY(3)
tWP
W
R/
'A'
tWB
BUSY'B'
tWH(1)
W
R/
'B'
(2)
2689 drw 13
NOTES:
1. tWH must be met for both BUSY Input (IDT7140, slave) or Output (IDT7130 master).
2. BUSY is asserted on port 'B' blocking R/W'B', until BUSY'B' goes High.
3. All timing is the same for the left and right ports. Port 'A' may be either the left or right
port. Port "B" is opposite from port "A".
TIMING WAVEFORM OF BUSY ARBITRATION CONTROLLED BY CE TIMING (1)
ADDR
'A'
ADDRESSES MATCH
AND 'B'
CE'B'
tAPS (2)
CE'A'
tBAC
tBDC
BUSY'A'
2689 drw 14
TIMING WAVEFORM OF BUSY ARBITRATION CONTROLLED BY ADDRESS MATCH TIMING (1)
tRC OR tWC
ADDR'A'
ADDRESSES MATCH
ADDRESSES DO NOT MATCH
(2)
tAPS
ADDR'B'
tBAA
tBDA
BUSY'B'
2689 drw 15
NOTES:
1. All timing is the same for left and right ports. Port “A” may be either left or right port. Port “B” is the opposite from port “A”.
2. If tAPS is not satisified, the BUSY will be asserted on one side or the other, but there is no guarantee on which side BUSY will be
asserted (7130 only).
6.01
10
IDT7130SA/LA AND IDT7140SA/LA
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(2)
7130X20(1)
Symbol
Parameter
Interrupt Timing
Address Set-up Time
tAS
tWR
Write Recovery Time
Interrupt Set Time
tINS
tINR
Interrupt Reset Time
Min.
Max.
0
0
—
—
—
—
20
20
7130X25(3)
7140X25(3)
Min.
Max.
0
0
—
—
7130X35
7140X35
Min. Max.
—
—
25
25
0
0
—
—
—
—
25
25
8M824S25
7130X55
7140X55
Min.
Max.
0
0
—
—
—
—
45
45
8M824S308M824S35
7130X100
7140X100
Min. Max.
Unit
0
0
—
—
—
—
60
60
ns
ns
ns
ns
2689 tbl 12
NOTES:
1. 0°C to +70°C temperature range only, PLCC and TQFP packages.
2. “X” in part numbers indicates power rating (SA or LA).
3. Not available in DIP packages .
TIMING WAVEFORM OF INTERRUPT MODE
INT SET:
tWC
ADDR'A'
INTERRUPT ADDRESS
(2)
(4)
tAS (3)
tWR
W'A'
R/
tINS
(3)
INT'B'
INT CLEAR:
2689 drw 16
tRC
ADDR'B'
INTERRUPT CLEAR ADDRESS
tAS
(3)
OE'B'
tINR
(3)
INT'B'
2689 drw 17
NOTES:.
1. All timing is the same for left and right ports. Port “A” may be either left or right port. Port “B” is the opposite from port “A”.
2. See Interrupt Truth Table.
3. Timing depends on which enable signal (CE or R/W) is asserted last.
4. Timing depends on which enable signal (CE or R/W) is de-asserted first.
6.01
11
IDT7130SA/LA AND IDT7140SA/LA
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TRUTH TABLES
TABLE I — NON-CONTENTION
READ/WRITE CONTROL(4)
Left or Right Port(1)
CE OE
R/
D0–7
X
H
X
Z
W
X
H
X
Z
L
H
H
L
L
L
X
L
H
DATAIN
DATAOUT
Z
Function
Port Disabled and in PowerDown Mode, ISB2 or ISB4
CER = CEL = VIH, Power-Down
Mode, ISB1 or ISB3
Data on Port Written Into Memory(2)
Data in Memory Output on Port(3)
High Impedance Outputs
NOTES:
2689 tbl 13
1. A0L – A10L ≠ A0R – A10R.
2. If BUSY = L, data is not written.
3. If BUSY = L, data may not be valid, see tWDD and tDDD timing.
4. 'H' = VIH, 'L' = VIL, 'X' = DON’T CARE, 'Z' = HIGH IMPEDANCE
TABLE II — INTERRUPT FLAG(1,4)
R/WL
L
X
X
X
CEL
Left Port
OEL
L
X
X
L
X
X
X
L
INTL
A9L – A0L
3FF
X
X
3FE
X
X
L(3)
H(2)
R/WR
X
X
L
X
Right Port
CER
OER
X
L
L
X
X
L
X
X
NOTES:
1. Assumes BUSYL = BUSYR = VIH
2. If BUSYL = VIL, then No Change.
3. If BUSYR = VIL, then No Change.
4. 'H' = HIGH,' L' = LOW,' X' = DON’T CARE
A9L – A0R
X
3FF
3FE
X
INTR
L(2)
H(3)
X
X
Function
Set Right INTR Flag
Reset Right INTR Flag
Set Left INTL Flag
Reset Left INTL Flag
2689 tbl 14
TABLE III — ADDRESS BUSY ARBITRATION
Inputs
CEL
CER
A0L-A9L
A0R-A9R
Outputs
BUSYL(1) BUSYR(1)
Function
X
X
NO MATCH
H
H
Normal
H
X
MATCH
H
H
Normal
X
H
MATCH
H
H
Normal
L
L
MATCH
(2)
(2)
Write Inhibit(3)
NOTES:
2689 tbl 15
1. Pins BUSYL and BUSYR are both outputs for IDT7130 (master). Both are
inputs for IDT7140 (slave). BUSYX outputs on the IDT7130 are open drain,
not push-pull outputs. On slaves the BUSYX input internally inhibits writes.
2. 'L' if the inputs to the opposite port were stable prior to the address and
enable inputs of this port. 'H' if the inputs to the opposite port became
stable after the address and enable inputs of this port. If tAPS is not met,
either BUSYL or BUSYR = Low will result. BUSYL and BUSYR outputs can
not be low simultaneously.
3. Writes to the left port are internally ignored when BUSYL outputs are
driving Low regardless of actual logic level on the pin. Writes to the right
port are internally ignored when BUSYR outputs are driving Low regardless of actual logic level on the pin.
6.01
12
IDT7130SA/LA AND IDT7140SA/LA
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
The IDT7130/IDT7140 provides two ports with separate control, address and I/O pins that permit independent access for
reads or writes to any location in memory. The IDT7130/
IDT7140 has an automatic power down feature controlled by
CE. The CE controls on-chip power down circuitry that permits
the respective port to go into a standby mode when not
selected (CE = VIH). When a port is enabled, access to the
entire memory array is permitted.
INTERRUPTS
If the user chooses to use the interrupt function, a memory
location (mail box or message center) is assigned to each
port. The left port interrupt flag (INTL) is asserted when the
right port writes to memory location 3FE (HEX), where a write
is defined as the CE = R/W = VIL per the Truth Table. The left
port clears the interrupt by access address location 3FE
access when CER = OER = VIL, R/W is a "don't care". Likewise,
the right port interrupt flag (INTR) is asserted when the left port
writes to memory location 3FF (HEX) and to clear the interrupt
flag (INTR), the right port must access the memory location
3FF. The message (8 bits) at 3FE or 3FF is user-defined,
since it is an addressable SRAM location. If the interrupt
function is not used, address locations 3FE and 3FF are not
used as mail boxes, but as part of the random access
memory. Refer to Table II for the interrupt operation.
The Busy outputs on the IDT7130 RAM (Master) are open
drain type outputs and require open drain resistors to operate.
If these RAMs are being expanded in depth, then the Busy
indication for the resulting array does not require the use of an
external AND gate.
WIDTH EXPANSION WITH BUSY LOGIC
MASTER/SLAVE ARRAYS
When expanding an RAM array in width while using busy
logic, one master part is used to decide which side of the RAM
array will receive a busy indication, and to output that indication. Any number of slaves to be addressed in the same
address range as the master, use the busy signal as a write
inhibit signal. Thus on the IDT7130/IDT7140 RAMs the Busy
pin is an output if the part is Master (IDT7130), and the Busy
pin is an input if the part is a Slave (IDT7140) as shown in
Figure 4.
5V
270Ω
MASTER
Dual Port
RAM
BUSY (L)
BUSYL
BUSY LOGIC
Busy Logic provides a hardware indication that both ports of
the RAM have accessed the same location at the same time.
It also allows one of the two accesses to proceed and signals
the other side that the RAM is “Busy”. The Busy pin can then
be used to stall the access until the operation on the other side
is completed. If a write operation has been attempted from the
side that receives a busy indication, the write signal is gated
internally to prevent the write from proceeding.
The use of busy logic is not required or desirable for all
applications. In some cases it may be useful to logically OR
the busy outputs together and use any busy indication as an
interrupt source to flag the event of an illegal or illogical
operation. In slave mode the BUSY pin operates solely as a
write inhibit input pin. Normal operation can be programmed
by tying the BUSY pins High. If desired, unintended write
operations can be prevented to a port by tying the Busy pin for
that port Low.
6.01
MASTER
Dual Port
RAM
BUSY (L)
CE
BUSY (R)
CE
BUSY (R)
SLAVE
Dual Port
RAM
BUSY (L)
SLAVE
Dual Port
RAM
BUSY (L)
CE
BUSY (R)
DECODER
FUNCTIONAL DESCRIPTION
5V
270Ω
CE
BUSY (R)
BUSYR
2689 drw 18
Figure 4. Busy and chip enable routing for both width and depth
expansion with IDT7130 (Master) and IDT7140 (Slave) RAMs.
If two or more master parts were used when expanding in
width, a split decision could result with one master indicating
busy on one side of the array and another master indicating
busy on one other side of the array. This would inhibit the write
operations from one port for part of a word and inhibit the write
operations from the other port for the other part of the word.
The Busy arbitration, on a Master, is based on the chip enable
and address signals only. It ignores whether an access is a
read or write. In a master/slave array, both address and chip
enable must be valid long enough for a busy flag to be output
from the master before the actual write pulse can be initiated
with either the R/W signal or the byte enables. Failure to
observe this timing can result in a glitched internal write inhibit
signal and corrupted data in the slave.
13
IDT7130SA/LA AND IDT7140SA/LA
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
ORDERING INFORMATION
IDT
XXXX
A
Device Type Power
999
Speed
A
Package
A
Process/
Temperature
Range
Blank
B
Commercial (0°C to +70°C)
Military (–55°C to +125°C)
Compliant to MIL-STD-883, Class B
P
C
J
L48
F
PF
TF
48-pin Plastic DIP (P48-1)
48-pin Sidebraze DIP (C48-2)
52-pin PLCC (J52-1)
48-pin LCC (L48-1)
48-pin Ceramic Flatpack (F48-1)
64-pin TQFP (PN64-1)
64-pin STQFP (PP64-1)
20
25
35
55
100
Commercial PLCC and TQFP Only
LCC, PLCC, and TQFP Only
LA
SA
Low Power
Standard Power
7130
7140
8K (1K x 8-Bit) MASTER Dual-Port RAM
8K (1K x 8-Bit) SLAVE Dual-Port RAM
Speed in nanoseconds
2689 drw 19
6.01
14