DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 M3D071 BAS40 series Schottky barrier (double) diodes Product specification Supersedes data of 1997 Oct 24 1999 Apr 28 Philips Semiconductors Product specification Schottky barrier (double) diodes FEATURES BAS40 series PINNING SOT23 (see Fig.1a) • Low forward voltage DESCRIPTION • Guard ring protected PIN BAS40 (see Fig.1b) BAS40-04 (see Fig.1c) BAS40-05 (see Fig.1d) BAS40-06 (see Fig.1e) 1 a1 a1 a1 k1 2 n.c. k2 a2 k2 3 k1 k1, a2 k1, k2 a1, a2 • Small plastic SMD package • Low diode capacitance. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes. handbook, 2 columns 3 3 handbook, 2 columns 1 DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for stress protection. Single diodes and double diodes with different pinning are available. The diodes BAS40, BAS40-04, BAS40-05 and BAS40-06 are encapsulated in a SOT23 small plastic SMD package. The BAS40-07 is encapsulated in a SOT143B small plastic SMD package MGC485 1 MGC482 MARKING CODE (1) BAS40 43∗ BAS40-04 44∗ BAS40-05 45∗ BAS40-06 46∗ BAS40-07 47p 3 handbook, 2 columns a. Simplified outline SOT23. 1 2 MGC484 d. BAS40-05. 3 3 handbook, 2 columns 2 n.c. 1 TYPE NUMBER c. BAS40-04 2 Top view handbook, 2 columns MARKING 2 1 2 MGC483 MGC486 b. BAS40 single diode. e. BAS40-06. Fig.1 Simplified outline (SOT23) and symbols. Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. handbook, halfpage 4 3 4 3 1 2 PINNING SOT143B (see Fig.2) PIN DESCRIPTION 1 BAS40-07 Top view 1 k1 2 k2 3 a2 4 a1 1999 Apr 28 2 MAM194 Fig.2 Simplified outline (SOT143B) BAS40-07 and symbol. 2 Philips Semiconductors Product specification Schottky barrier (double) diodes BAS40 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage − 40 V IF continuous forward current − 120 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 − 120 mA IFSM non-repetitive peak forward current tp < 10 ms − 200 mA Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF IR Cd forward voltage reverse current diode capacitance see Fig.3 IF = 1 mA 380 mV IF = 10 mA 500 mV IF = 40 mA 1 V VR = 30 V; note 1; see Fig.4 1 µA VR = 40 V; note 1; see Fig.4 10 µA f = 1 MHz; VR = 0 ; see Fig.6 5 pF Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Refer to SOT23 or SOT143B standard mounting conditions. 1999 Apr 28 3 VALUE UNIT 500 K/W Philips Semiconductors Product specification Schottky barrier (double) diodes BAS40 series GRAPHICAL DATA MLC361 - 1 2 10halfpage handbook, MLC362 103 handbook, halfpage IR (µA) IF (mA) (1) 102 10 10 (1) (2) (3) (2) (4) 1 1 10 1 10−1 (3) 10 2 10−2 0 0.2 0.4 0.6 0.8 10 0 1.0 20 30 V F (V) (1) (2) (3) (4) Tamb = 150 °C. Tamb = 85 °C. Tamb = 25 °C. Tamb = −40 °C. Fig.3 VR (V) 40 (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Forward current as a function of forward voltage; typical values. Fig.4 Reverse current as a function of reverse voltage; typical values. MLC364 10 3 handbook, halfpage MLC363 5 Cd (pF) handbook, halfpage r diff (Ω) 4 102 3 2 10 1 1 10 1 0 1 10 IF (mA) 10 0 2 Differential forward resistance as a function of forward current; typical values. 1999 Apr 28 20 30 VR (V) 40 f = 1 MHz Tamb = 25 °C. f = 10 kHz. Fig.5 10 Fig.6 4 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification Schottky barrier (double) diodes BAS40 series PACKAGE OUTLINES Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1999 Apr 28 EUROPEAN PROJECTION 5 Philips Semiconductors Product specification Schottky barrier (double) diodes BAS40 series Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT143B 1999 Apr 28 EUROPEAN PROJECTION 6 Philips Semiconductors Product specification Schottky barrier (double) diodes BAS40 series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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